CH530715A - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- CH530715A CH530715A CH887071A CH887071A CH530715A CH 530715 A CH530715 A CH 530715A CH 887071 A CH887071 A CH 887071A CH 887071 A CH887071 A CH 887071A CH 530715 A CH530715 A CH 530715A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7009091A NL7009091A (de) | 1970-06-20 | 1970-06-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH530715A true CH530715A (de) | 1972-11-15 |
Family
ID=19810388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH887071A CH530715A (de) | 1970-06-20 | 1971-06-17 | Halbleiteranordnung |
Country Status (12)
Country | Link |
---|---|
US (1) | US3777230A (de) |
JP (1) | JPS5010108B1 (de) |
BE (1) | BE768763A (de) |
CA (1) | CA960373A (de) |
CH (1) | CH530715A (de) |
DE (1) | DE2128868C3 (de) |
ES (1) | ES392402A1 (de) |
FR (1) | FR2095387B1 (de) |
GB (1) | GB1354915A (de) |
HK (1) | HK58776A (de) |
NL (1) | NL7009091A (de) |
SE (1) | SE360510B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2070329B (en) * | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
JPS5956870U (ja) * | 1982-10-04 | 1984-04-13 | デイエツクスアンテナ株式会社 | 電話用電子音響器 |
US5027183A (en) * | 1990-04-20 | 1991-06-25 | International Business Machines | Isolated semiconductor macro circuit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1273220A (fr) * | 1959-11-10 | 1961-10-06 | Gen Electric Co Ltd | Perfectionnements aux appareillages électriques miniature |
US3254277A (en) * | 1963-02-27 | 1966-05-31 | United Aircraft Corp | Integrated circuit with component defining groove |
US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
FR155459A (de) * | 1967-01-23 | |||
GB1183384A (en) * | 1967-03-31 | 1970-03-04 | Associated Semiconductor Mft | Improvements in Automatic Gain Control Circuit Arrangements |
FR1539043A (fr) * | 1967-06-30 | 1968-09-13 | Radiotechnique Coprim Rtc | Circuit intégré comportant un transistor et son procédé de fabrication |
FR2031940A5 (de) * | 1969-02-13 | 1970-11-20 | Radiotechnique Compelec |
-
1970
- 1970-06-20 NL NL7009091A patent/NL7009091A/xx unknown
-
1971
- 1971-06-11 DE DE2128868A patent/DE2128868C3/de not_active Expired
- 1971-06-16 CA CA115,764A patent/CA960373A/en not_active Expired
- 1971-06-17 SE SE07896/71A patent/SE360510B/xx unknown
- 1971-06-17 GB GB2844571A patent/GB1354915A/en not_active Expired
- 1971-06-17 CH CH887071A patent/CH530715A/de not_active IP Right Cessation
- 1971-06-18 BE BE768763A patent/BE768763A/xx unknown
- 1971-06-18 ES ES392402A patent/ES392402A1/es not_active Expired
- 1971-06-18 FR FR7122283A patent/FR2095387B1/fr not_active Expired
- 1971-06-19 JP JP46044422A patent/JPS5010108B1/ja active Pending
-
1973
- 1973-02-05 US US00329846A patent/US3777230A/en not_active Expired - Lifetime
-
1976
- 1976-09-23 HK HK587/76*UA patent/HK58776A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
HK58776A (en) | 1976-10-01 |
SE360510B (de) | 1973-09-24 |
DE2128868C3 (de) | 1979-08-30 |
ES392402A1 (es) | 1974-09-01 |
GB1354915A (en) | 1974-06-05 |
US3777230A (en) | 1973-12-04 |
DE2128868A1 (de) | 1971-12-30 |
FR2095387B1 (de) | 1978-06-02 |
DE2128868B2 (de) | 1978-12-21 |
CA960373A (en) | 1974-12-31 |
JPS5010108B1 (de) | 1975-04-18 |
FR2095387A1 (de) | 1972-02-11 |
BE768763A (fr) | 1971-12-20 |
NL7009091A (de) | 1971-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |