CH516342A - Einrichtung für das epitaktische Aufwachsen einer Halbleiterschicht - Google Patents

Einrichtung für das epitaktische Aufwachsen einer Halbleiterschicht

Info

Publication number
CH516342A
CH516342A CH1878670A CH1878670A CH516342A CH 516342 A CH516342 A CH 516342A CH 1878670 A CH1878670 A CH 1878670A CH 1878670 A CH1878670 A CH 1878670A CH 516342 A CH516342 A CH 516342A
Authority
CH
Switzerland
Prior art keywords
semiconductor layer
epitaxial growth
epitaxial
growth
semiconductor
Prior art date
Application number
CH1878670A
Other languages
English (en)
Inventor
Raymond Garnache Richard
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH516342A publication Critical patent/CH516342A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
CH1878670A 1970-01-02 1970-12-18 Einrichtung für das epitaktische Aufwachsen einer Halbleiterschicht CH516342A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34470A 1970-01-02 1970-01-02

Publications (1)

Publication Number Publication Date
CH516342A true CH516342A (de) 1971-12-15

Family

ID=21691104

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1878670A CH516342A (de) 1970-01-02 1970-12-18 Einrichtung für das epitaktische Aufwachsen einer Halbleiterschicht

Country Status (7)

Country Link
US (1) US3603284A (de)
JP (1) JPS4822902B1 (de)
CA (1) CA922502A (de)
CH (1) CH516342A (de)
DE (1) DE2049229A1 (de)
FR (1) FR2075031A5 (de)
GB (1) GB1328838A (de)

Families Citing this family (49)

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JPS5517018Y2 (de) * 1974-03-20 1980-04-21
DE2943634C2 (de) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxiereaktor
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4365588A (en) * 1981-03-13 1982-12-28 Rca Corporation Fixture for VPE reactor
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US4496828A (en) * 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
JPS63186875A (ja) * 1987-01-29 1988-08-02 Tadahiro Omi 表面反応成膜装置
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
DE3816788A1 (de) * 1988-05-17 1989-11-23 Siemens Ag Epitaxievorrichtung
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
FR2670507B1 (fr) * 1990-12-18 1993-12-31 Propulsion Ste Europeenne Procede d'infiltration chimique en phase vapeur.
US5268034A (en) * 1991-06-25 1993-12-07 Lsi Logic Corporation Fluid dispersion head for CVD appratus
US5286519A (en) * 1991-06-25 1994-02-15 Lsi Logic Corporation Fluid dispersion head
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
US5522933A (en) * 1994-05-19 1996-06-04 Geller; Anthony S. Particle-free microchip processing
KR100294057B1 (ko) * 1995-08-22 2001-09-17 모리시타 요이찌 실리콘 구조체층을 포함하는 반도체 장치, 그 층의 제조방법 및 제조장치와 그 층을 이용한 태양전지
US6194030B1 (en) 1999-03-18 2001-02-27 International Business Machines Corporation Chemical vapor deposition velocity control apparatus
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
TW460942B (en) * 1999-08-31 2001-10-21 Mitsubishi Material Silicon CVD device, purging method, method for determining maintenance time for a semiconductor making device, moisture content monitoring device, and semiconductor making device with such moisture content monitoring device
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6660126B2 (en) * 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
KR100515052B1 (ko) * 2002-07-18 2005-09-14 삼성전자주식회사 반도체 기판상에 소정의 물질을 증착하는 반도체 제조 장비
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US9101898B2 (en) 2006-03-29 2015-08-11 Robert M. Zubrin Portable gas generating device
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
CN103628039A (zh) * 2012-08-28 2014-03-12 北京北方微电子基地设备工艺研究中心有限责任公司 Mocvd反应腔及mocvd设备
CN103898473A (zh) * 2012-12-27 2014-07-02 北京北方微电子基地设备工艺研究中心有限责任公司 工艺反应腔及工艺设备
CN104233225B (zh) * 2013-06-17 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室以及设置有该反应腔室的半导体处理设备
EP3061845B1 (de) * 2015-02-03 2018-12-12 LG Electronics Inc. Metallorganische chemische aufdampfungsvorrichtung für eine solarzelle
MX359183B (es) 2015-02-17 2018-09-17 Solarcity Corp Metodo y sistema para mejorar rendimiento de fabricacion de celda solar.
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
CN108140550B (zh) * 2015-10-08 2022-10-14 应用材料公司 具有减少的背侧等离子体点火的喷淋头
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US2378476A (en) * 1943-02-11 1945-06-19 American Optical Corp Coating apparatus
US2489127A (en) * 1947-06-14 1949-11-22 Rca Corp High capacitance target
BE515457A (de) * 1951-11-10
GB760328A (en) * 1953-06-10 1956-10-31 Erie Resistor Ltd Improvements in and relating to a process and apparatus for the production of thin deposits upon a support by decomposition of a gaseous material
NL265823A (de) * 1960-06-13
NL6700080A (de) * 1966-01-03 1967-07-04
US3397094A (en) * 1965-03-25 1968-08-13 James E. Webb Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means

Also Published As

Publication number Publication date
JPS4822902B1 (de) 1973-07-10
CA922502A (en) 1973-03-13
FR2075031A5 (de) 1971-10-08
GB1328838A (en) 1973-09-05
US3603284A (en) 1971-09-07
DE2049229A1 (de) 1971-07-08

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