CH461645A - Monolithische integrierte Halbleiterschaltungsanordnung - Google Patents

Monolithische integrierte Halbleiterschaltungsanordnung

Info

Publication number
CH461645A
CH461645A CH460467A CH460467A CH461645A CH 461645 A CH461645 A CH 461645A CH 460467 A CH460467 A CH 460467A CH 460467 A CH460467 A CH 460467A CH 461645 A CH461645 A CH 461645A
Authority
CH
Switzerland
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
monolithic semiconductor
monolithic
Prior art date
Application number
CH460467A
Other languages
English (en)
Inventor
Agusta Benjamin
Harold Bardell Paul
Philip Castrucci Paul
Athanisius Henle Robert
Philip Pecoraro Raymond
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH461645A publication Critical patent/CH461645A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH460467A 1966-03-31 1967-03-30 Monolithische integrierte Halbleiterschaltungsanordnung CH461645A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53921066A 1966-03-31 1966-03-31

Publications (1)

Publication Number Publication Date
CH461645A true CH461645A (de) 1968-08-31

Family

ID=24150280

Family Applications (1)

Application Number Title Priority Date Filing Date
CH460467A CH461645A (de) 1966-03-31 1967-03-30 Monolithische integrierte Halbleiterschaltungsanordnung

Country Status (7)

Country Link
US (1) US3508209A (de)
JP (1) JPS499273B1 (de)
CH (1) CH461645A (de)
DE (1) DE1589935C3 (de)
ES (1) ES338621A1 (de)
NL (1) NL155985B (de)
SE (1) SE345930B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764241C3 (de) * 1968-04-30 1978-09-07 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiterschaltung
US3803562A (en) * 1972-11-21 1974-04-09 Honeywell Inf Systems Semiconductor mass memory
GB1440512A (en) * 1973-04-30 1976-06-23 Rca Corp Universal array using complementary transistors
JPS51114066U (de) * 1975-03-11 1976-09-16
JPH0616506B2 (ja) * 1984-12-26 1994-03-02 株式会社半導体エネルギー研究所 積層体の側周辺に選択的に被膜を形成する方法
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
US5270964A (en) * 1992-05-19 1993-12-14 Sun Microsystems, Inc. Single in-line memory module
GB0413392D0 (en) * 2004-06-16 2004-07-21 Rolls Royce Plc A method of consolidating a power
US7391111B2 (en) * 2005-05-20 2008-06-24 Texas Instruments Incorporated Systems and methods for maintaining performance at a reduced power
US8492290B2 (en) * 2011-06-21 2013-07-23 International Business Machines Corporation Fabrication of silicon oxide and oxynitride having sub-nanometer thickness
US10756298B2 (en) 2017-11-03 2020-08-25 OLEDWorks LLC Solder hermetic sealing for OLEDs

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (de) * 1961-09-08
NL298196A (de) * 1962-09-22
US3275846A (en) * 1963-02-25 1966-09-27 Motorola Inc Integrated circuit bistable multivibrator
US3418639A (en) * 1963-05-06 1968-12-24 Burroughs Corp Associative memory employing nondestructive readout of binary elements
NL294168A (de) * 1963-06-17
BE650116A (de) * 1963-07-05 1900-01-01
US3379940A (en) * 1964-02-11 1968-04-23 Nippon Electric Co Integrated symmetrical conduction device
US3292241A (en) * 1964-05-20 1966-12-20 Motorola Inc Method for connecting semiconductor devices
US3421026A (en) * 1964-06-29 1969-01-07 Gen Electric Memory flip-flop
US3333326A (en) * 1964-06-29 1967-08-01 Ibm Method of modifying electrical characteristic of semiconductor member
US3354440A (en) * 1965-04-19 1967-11-21 Ibm Nondestructive memory array
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors

Also Published As

Publication number Publication date
SE345930B (de) 1972-06-12
ES338621A1 (es) 1968-04-01
DE1589935B2 (de) 1974-09-12
DE1589935A1 (de) 1972-03-30
DE1589935C3 (de) 1975-05-07
NL6704372A (de) 1967-10-02
NL155985B (nl) 1978-02-15
JPS499273B1 (de) 1974-03-02
US3508209A (en) 1970-04-21

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