CH457627A - Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes - Google Patents

Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes

Info

Publication number
CH457627A
CH457627A CH179667A CH179667A CH457627A CH 457627 A CH457627 A CH 457627A CH 179667 A CH179667 A CH 179667A CH 179667 A CH179667 A CH 179667A CH 457627 A CH457627 A CH 457627A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
producing
metal contact
semiconductor
component
Prior art date
Application number
CH179667A
Other languages
English (en)
Inventor
Heinz-Herbert Dr Arndt
Juergen Dr Schaedel
Mueller Dieter
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH457627A publication Critical patent/CH457627A/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/0554—External layer
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    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
CH179667A 1966-03-19 1967-02-07 Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes CH457627A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES102622A DE1283970B (de) 1966-03-19 1966-03-19 Metallischer Kontakt an einem Halbleiterbauelement

Publications (1)

Publication Number Publication Date
CH457627A true CH457627A (de) 1968-06-15

Family

ID=7524571

Family Applications (1)

Application Number Title Priority Date Filing Date
CH179667A CH457627A (de) 1966-03-19 1967-02-07 Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes

Country Status (8)

Country Link
US (1) US3633076A (de)
BE (1) BE694479A (de)
CH (1) CH457627A (de)
DE (1) DE1283970B (de)
FR (1) FR1515415A (de)
GB (1) GB1174613A (de)
NL (1) NL6702273A (de)
SE (1) SE312864B (de)

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DE2643147A1 (de) * 1975-09-25 1977-04-07 Texas Instruments Inc Halbleiterdiode

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GB1263381A (en) * 1968-05-17 1972-02-09 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
US3769688A (en) * 1972-04-21 1973-11-06 Rca Corp Method of making an electrically-insulating seal between a metal body and a semiconductor device
JPS5745061B2 (de) * 1972-05-02 1982-09-25
US4106860A (en) * 1973-09-07 1978-08-15 Bbc Brown Boveri & Company Limited Liquid-crystal cell
JPS5341064B2 (de) * 1974-02-25 1978-10-31
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
JPS5152277A (ja) * 1974-09-24 1976-05-08 Hitachi Ltd Handotaisochi
JPS51142988A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor devices
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices
DE2807350C2 (de) * 1977-03-02 1983-01-13 Sharp K.K., Osaka Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
DE3039658A1 (de) * 1980-10-21 1982-05-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Mit edelmetall beschichtetes molybdaen und verfahren zu seiner herstellung
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
JPS60119777A (ja) * 1983-11-30 1985-06-27 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ
US4736236A (en) * 1984-03-08 1988-04-05 Olin Corporation Tape bonding material and structure for electronic circuit fabrication
US4737839A (en) * 1984-03-19 1988-04-12 Trilogy Computer Development Partners, Ltd. Semiconductor chip mounting system
DE3781861T2 (de) * 1986-10-27 1993-04-01 Electric Power Res Inst Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern.
US4974056A (en) * 1987-05-22 1990-11-27 International Business Machines Corporation Stacked metal silicide gate structure with barrier
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
US5503286A (en) * 1994-06-28 1996-04-02 International Business Machines Corporation Electroplated solder terminal
US6897141B2 (en) * 2002-10-23 2005-05-24 Ocube Digital Co., Ltd. Solder terminal and fabricating method thereof
US9093385B2 (en) * 2013-05-28 2015-07-28 Infineon Technologies Ag Method for processing a semiconductor workpiece with metallization

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US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
FR1246813A (fr) * 1959-10-10 1960-11-25 Perfectionnements à la fabrication des éléments semi-conducteurs
BE639640A (de) * 1962-05-25 1900-01-01
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
NL134170C (de) * 1963-12-17 1900-01-01
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
GB1104804A (en) * 1964-04-28 1968-02-28 Texas Instruments Inc Improvements relating to semiconductor devices
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2643147A1 (de) * 1975-09-25 1977-04-07 Texas Instruments Inc Halbleiterdiode

Also Published As

Publication number Publication date
GB1174613A (en) 1969-12-17
SE312864B (de) 1969-07-28
US3633076A (en) 1972-01-04
NL6702273A (de) 1967-09-20
FR1515415A (fr) 1968-03-01
DE1283970B (de) 1968-11-28
BE694479A (de) 1967-07-31

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