CH457627A - Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes - Google Patents
Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines HalbleiterbauelementesInfo
- Publication number
- CH457627A CH457627A CH179667A CH179667A CH457627A CH 457627 A CH457627 A CH 457627A CH 179667 A CH179667 A CH 179667A CH 179667 A CH179667 A CH 179667A CH 457627 A CH457627 A CH 457627A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor component
- producing
- metal contact
- semiconductor
- component
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES102622A DE1283970B (de) | 1966-03-19 | 1966-03-19 | Metallischer Kontakt an einem Halbleiterbauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
CH457627A true CH457627A (de) | 1968-06-15 |
Family
ID=7524571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH179667A CH457627A (de) | 1966-03-19 | 1967-02-07 | Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes |
Country Status (8)
Country | Link |
---|---|
US (1) | US3633076A (de) |
BE (1) | BE694479A (de) |
CH (1) | CH457627A (de) |
DE (1) | DE1283970B (de) |
FR (1) | FR1515415A (de) |
GB (1) | GB1174613A (de) |
NL (1) | NL6702273A (de) |
SE (1) | SE312864B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2643147A1 (de) * | 1975-09-25 | 1977-04-07 | Texas Instruments Inc | Halbleiterdiode |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1263381A (en) * | 1968-05-17 | 1972-02-09 | Texas Instruments Inc | Metal contact and interconnection system for nonhermetic enclosed semiconductor devices |
CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
BE763522A (fr) * | 1970-03-03 | 1971-07-16 | Licentia Gmbh | Serie de couches de contact pour des elements de construction semi-conducteurs |
US3769688A (en) * | 1972-04-21 | 1973-11-06 | Rca Corp | Method of making an electrically-insulating seal between a metal body and a semiconductor device |
JPS5745061B2 (de) * | 1972-05-02 | 1982-09-25 | ||
US4106860A (en) * | 1973-09-07 | 1978-08-15 | Bbc Brown Boveri & Company Limited | Liquid-crystal cell |
JPS5341064B2 (de) * | 1974-02-25 | 1978-10-31 | ||
US4096510A (en) * | 1974-08-19 | 1978-06-20 | Matsushita Electric Industrial Co., Ltd. | Thermal printing head |
JPS5152277A (ja) * | 1974-09-24 | 1976-05-08 | Hitachi Ltd | Handotaisochi |
JPS51142988A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Semiconductor devices |
US4065588A (en) * | 1975-11-20 | 1977-12-27 | Rca Corporation | Method of making gold-cobalt contact for silicon devices |
DE2807350C2 (de) * | 1977-03-02 | 1983-01-13 | Sharp K.K., Osaka | Flüssigkristall-Anzeigevorrichtung in Baueinheit mit einem integrierten Schaltkreis |
FR2431900A1 (fr) * | 1978-07-25 | 1980-02-22 | Thomson Csf | Systeme de soudure d'un laser a semiconducteur sur un socle metallique |
US4214256A (en) * | 1978-09-08 | 1980-07-22 | International Business Machines Corporation | Tantalum semiconductor contacts and method for fabricating same |
DE2926785C2 (de) * | 1979-07-03 | 1985-12-12 | HIGRATHERM electric GmbH, 7100 Heilbronn | Bipolarer Transistor und Verfahren zu seiner Herstellung |
NL8004139A (nl) * | 1980-07-18 | 1982-02-16 | Philips Nv | Halfgeleiderinrichting. |
DE3039658A1 (de) * | 1980-10-21 | 1982-05-06 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Mit edelmetall beschichtetes molybdaen und verfahren zu seiner herstellung |
JPS5778173A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
US4482913A (en) * | 1982-02-24 | 1984-11-13 | Westinghouse Electric Corp. | Semiconductor device soldered to a graphite substrate |
JPS60119777A (ja) * | 1983-11-30 | 1985-06-27 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ |
US4736236A (en) * | 1984-03-08 | 1988-04-05 | Olin Corporation | Tape bonding material and structure for electronic circuit fabrication |
US4737839A (en) * | 1984-03-19 | 1988-04-12 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip mounting system |
DE3781861T2 (de) * | 1986-10-27 | 1993-04-01 | Electric Power Res Inst | Herstellung einer mehrschichtigen leistungshalbleiterschaltung mit mehrfachen parallelen kontaktfingern. |
US4974056A (en) * | 1987-05-22 | 1990-11-27 | International Business Machines Corporation | Stacked metal silicide gate structure with barrier |
US5367195A (en) * | 1993-01-08 | 1994-11-22 | International Business Machines Corporation | Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal |
US5503286A (en) * | 1994-06-28 | 1996-04-02 | International Business Machines Corporation | Electroplated solder terminal |
US6897141B2 (en) * | 2002-10-23 | 2005-05-24 | Ocube Digital Co., Ltd. | Solder terminal and fabricating method thereof |
US9093385B2 (en) * | 2013-05-28 | 2015-07-28 | Infineon Technologies Ag | Method for processing a semiconductor workpiece with metallization |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2973466A (en) * | 1959-09-09 | 1961-02-28 | Bell Telephone Labor Inc | Semiconductor contact |
FR1246813A (fr) * | 1959-10-10 | 1960-11-25 | Perfectionnements à la fabrication des éléments semi-conducteurs | |
BE639640A (de) * | 1962-05-25 | 1900-01-01 | ||
US3290753A (en) * | 1963-08-19 | 1966-12-13 | Bell Telephone Labor Inc | Method of making semiconductor integrated circuit elements |
NL134170C (de) * | 1963-12-17 | 1900-01-01 | ||
US3370207A (en) * | 1964-02-24 | 1968-02-20 | Gen Electric | Multilayer contact system for semiconductor devices including gold and copper layers |
US3290127A (en) * | 1964-03-30 | 1966-12-06 | Bell Telephone Labor Inc | Barrier diode with metal contact and method of making |
GB1104804A (en) * | 1964-04-28 | 1968-02-28 | Texas Instruments Inc | Improvements relating to semiconductor devices |
US3341753A (en) * | 1964-10-21 | 1967-09-12 | Texas Instruments Inc | Metallic contacts for semiconductor devices |
-
1966
- 1966-03-19 DE DES102622A patent/DE1283970B/de active Pending
-
1967
- 1967-02-07 CH CH179667A patent/CH457627A/de unknown
- 1967-02-10 SE SE1873/67A patent/SE312864B/xx unknown
- 1967-02-15 NL NL6702273A patent/NL6702273A/xx unknown
- 1967-02-22 BE BE694479D patent/BE694479A/xx unknown
- 1967-03-16 FR FR99135A patent/FR1515415A/fr not_active Expired
- 1967-03-20 GB GB03037/67A patent/GB1174613A/en not_active Expired
- 1967-03-20 US US624580A patent/US3633076A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2643147A1 (de) * | 1975-09-25 | 1977-04-07 | Texas Instruments Inc | Halbleiterdiode |
Also Published As
Publication number | Publication date |
---|---|
GB1174613A (en) | 1969-12-17 |
SE312864B (de) | 1969-07-28 |
US3633076A (en) | 1972-01-04 |
NL6702273A (de) | 1967-09-20 |
FR1515415A (fr) | 1968-03-01 |
DE1283970B (de) | 1968-11-28 |
BE694479A (de) | 1967-07-31 |
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