CH446539A - Semiconductor component - Google Patents
Semiconductor componentInfo
- Publication number
- CH446539A CH446539A CH1836266A CH1836266A CH446539A CH 446539 A CH446539 A CH 446539A CH 1836266 A CH1836266 A CH 1836266A CH 1836266 A CH1836266 A CH 1836266A CH 446539 A CH446539 A CH 446539A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor component
- semiconductor
- component
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEL0052489 | 1965-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH446539A true CH446539A (en) | 1967-11-15 |
Family
ID=7274749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1836266A CH446539A (en) | 1965-12-28 | 1966-12-22 | Semiconductor component |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH446539A (en) |
DE (1) | DE1514184A1 (en) |
FR (1) | FR1506862A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2406307A1 (en) * | 1977-10-17 | 1979-05-11 | Radiotechnique Compelec | Passivated semiconductor devices - esp. mesa diodes, where edges of pn junctions are covered by film of silica |
FR2468207A1 (en) * | 1979-10-23 | 1981-04-30 | Thomson Csf | Separation slot structure in semiconductors - has shallow V=shape esp. for mesa structures obtained by chemical attack or mechanical grinding |
JPS6279667A (en) * | 1985-10-03 | 1987-04-13 | Mitsubishi Electric Corp | Semiconductor device |
-
1965
- 1965-12-28 DE DE19651514184 patent/DE1514184A1/en active Pending
-
1966
- 1966-12-22 CH CH1836266A patent/CH446539A/en unknown
- 1966-12-28 FR FR89122A patent/FR1506862A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1506862A (en) | 1967-12-22 |
DE1514184A1 (en) | 1969-09-11 |
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