CH400370A - Procédé de fabrication d'un dispositif semi-conducteur - Google Patents
Procédé de fabrication d'un dispositif semi-conducteurInfo
- Publication number
- CH400370A CH400370A CH144462A CH144462A CH400370A CH 400370 A CH400370 A CH 400370A CH 144462 A CH144462 A CH 144462A CH 144462 A CH144462 A CH 144462A CH 400370 A CH400370 A CH 400370A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26135A US3130377A (en) | 1960-05-02 | 1960-05-02 | Semiconductor integrated circuit utilizing field-effect transistors |
US8725861A | 1961-02-06 | 1961-02-06 | |
US377710A US3211972A (en) | 1960-05-02 | 1964-06-24 | Semiconductor networks |
Publications (1)
Publication Number | Publication Date |
---|---|
CH400370A true CH400370A (fr) | 1965-10-15 |
Family
ID=27362700
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH634365A CH428008A (fr) | 1960-05-02 | 1962-02-06 | Dispositif semi-conducteur |
CH144462A CH400370A (fr) | 1960-05-02 | 1962-02-06 | Procédé de fabrication d'un dispositif semi-conducteur |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH634365A CH428008A (fr) | 1960-05-02 | 1962-02-06 | Dispositif semi-conducteur |
Country Status (8)
Country | Link |
---|---|
US (2) | US3130377A (fr) |
CH (2) | CH428008A (fr) |
DE (2) | DE1514842B2 (fr) |
FR (1) | FR1313638A (fr) |
GB (2) | GB988902A (fr) |
LU (1) | LU41205A1 (fr) |
MY (2) | MY6900294A (fr) |
NL (2) | NL274363A (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE623677A (fr) * | 1961-10-20 | |||
NL296208A (fr) * | 1962-08-03 | |||
NL301883A (fr) * | 1962-12-17 | |||
US3271633A (en) * | 1963-01-29 | 1966-09-06 | Motorola Inc | Integrated field effect device with series connected channel |
US3243732A (en) * | 1963-02-19 | 1966-03-29 | Rca Corp | Semiconductor circuits exhibiting nshaped transconductance characteristic utilizing unipolar field effect and bipolar transistors |
FR1358573A (fr) * | 1963-03-06 | 1964-04-17 | Csf | Circuit électrique intégré |
GB1093124A (en) * | 1963-07-26 | 1967-11-29 | Texas Instruments Ltd | Field-effect transistor switches |
NL143074B (nl) * | 1963-12-13 | 1974-08-15 | Philips Nv | Transistor. |
US3327181A (en) * | 1964-03-24 | 1967-06-20 | Crystalonics Inc | Epitaxial transistor and method of manufacture |
US3455748A (en) * | 1965-05-24 | 1969-07-15 | Sprague Electric Co | Method of making a narrow base transistor |
US3363154A (en) * | 1965-06-28 | 1968-01-09 | Teledyne Inc | Integrated circuit having active and passive components in same semiconductor region |
US3489961A (en) * | 1966-09-29 | 1970-01-13 | Fairchild Camera Instr Co | Mesa etching for isolation of functional elements in integrated circuits |
US3488564A (en) * | 1968-04-01 | 1970-01-06 | Fairchild Camera Instr Co | Planar epitaxial resistors |
US3573573A (en) * | 1968-12-23 | 1971-04-06 | Ibm | Memory cell with buried load impedances |
US3654530A (en) * | 1970-06-22 | 1972-04-04 | Ibm | Integrated clamping circuit |
US4068255A (en) * | 1975-10-16 | 1978-01-10 | Dionics, Inc. | Mesa-type high voltage switching integrated circuit |
US4685203A (en) * | 1983-09-13 | 1987-08-11 | Mitsubishi Denki Kabushiki Kaisha | Hybrid integrated circuit substrate and method of manufacturing the same |
US4873497A (en) * | 1988-10-03 | 1989-10-10 | Motorola, Inc. | Wide band voltage controlled R-C oscillator for use with MMIC technology |
DE19703780A1 (de) * | 1997-02-01 | 1998-08-06 | Thomas Frohberg | Trinom-Transistor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE527524A (fr) * | 1949-05-30 | |||
US2840494A (en) * | 1952-12-31 | 1958-06-24 | Henry W Parker | Manufacture of transistors |
US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
US2894221A (en) * | 1955-10-11 | 1959-07-07 | Carl E Coy | Artificial transmission lines |
US2897295A (en) * | 1956-06-28 | 1959-07-28 | Honeywell Regulator Co | Cascaded tetrode transistor amplifier |
US2967277A (en) * | 1958-07-29 | 1961-01-03 | Hahnel Alwin | Frequency divider |
US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
NL268758A (fr) * | 1960-09-20 |
-
0
- NL NL123416D patent/NL123416C/xx active
- NL NL274363D patent/NL274363A/xx unknown
-
1960
- 1960-05-02 US US26135A patent/US3130377A/en not_active Expired - Lifetime
-
1962
- 1962-02-02 GB GB4150/62A patent/GB988902A/en not_active Expired
- 1962-02-02 GB GB48012/64A patent/GB988903A/en not_active Expired
- 1962-02-05 FR FR887015A patent/FR1313638A/fr not_active Expired
- 1962-02-05 LU LU41205D patent/LU41205A1/xx unknown
- 1962-02-05 DE DE19621514842 patent/DE1514842B2/de active Pending
- 1962-02-05 DE DE1962T0021531 patent/DE1207014C2/de not_active Expired
- 1962-02-06 CH CH634365A patent/CH428008A/fr unknown
- 1962-02-06 CH CH144462A patent/CH400370A/fr unknown
-
1964
- 1964-06-24 US US377710A patent/US3211972A/en not_active Expired - Lifetime
-
1969
- 1969-12-31 MY MY1969294A patent/MY6900294A/xx unknown
- 1969-12-31 MY MY1969289A patent/MY6900289A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL274363A (fr) | |
MY6900294A (en) | 1969-12-31 |
CH428008A (fr) | 1967-01-15 |
GB988903A (en) | 1965-04-14 |
US3211972A (en) | 1965-10-12 |
DE1514842B2 (de) | 1972-10-05 |
DE1207014B (de) | 1965-12-16 |
MY6900289A (en) | 1969-12-31 |
US3130377A (en) | 1964-04-21 |
NL123416C (fr) | |
DE1207014C2 (de) | 1976-06-10 |
FR1313638A (fr) | 1962-12-28 |
GB988902A (en) | 1965-04-14 |
LU41205A1 (fr) | 1962-04-05 |
DE1514842A1 (de) | 1970-11-26 |
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