CH386395A - Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt - Google Patents

Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt

Info

Publication number
CH386395A
CH386395A CH915161A CH915161A CH386395A CH 386395 A CH386395 A CH 386395A CH 915161 A CH915161 A CH 915161A CH 915161 A CH915161 A CH 915161A CH 386395 A CH386395 A CH 386395A
Authority
CH
Switzerland
Prior art keywords
semiconductor
particular band
producing elongated
melt
bodies
Prior art date
Application number
CH915161A
Other languages
German (de)
Inventor
Werner Dr Spielmann
Guenther Dr Ziegler
Walter Dr Heywang
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH386395A publication Critical patent/CH386395A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH915161A 1960-09-20 1961-08-04 Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt CH386395A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES70427A DE1162329B (en) 1960-09-20 1960-09-20 Method for producing elongated, in particular dendritic semiconductor bodies and device for carrying out this method
DES73416A DE1202248B (en) 1960-09-20 1961-04-11 Process for the production of ribbon-shaped semiconductor crystals

Publications (1)

Publication Number Publication Date
CH386395A true CH386395A (en) 1965-01-15

Family

ID=25996215

Family Applications (2)

Application Number Title Priority Date Filing Date
CH915161A CH386395A (en) 1960-09-20 1961-08-04 Method for producing elongated, in particular band-shaped semiconductor bodies from a semiconductor melt
CH1472261A CH401919A (en) 1960-09-20 1961-12-19 Method for producing elongated, in particular band-shaped semiconductor bodies

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH1472261A CH401919A (en) 1960-09-20 1961-12-19 Method for producing elongated, in particular band-shaped semiconductor bodies

Country Status (5)

Country Link
US (1) US3293001A (en)
CH (2) CH386395A (en)
DE (2) DE1162329B (en)
GB (2) GB930432A (en)
NL (1) NL269311A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (en) * 1963-10-15 1965-04-20
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
CN105002556A (en) * 2014-04-21 2015-10-28 洛阳金诺机械工程有限公司 Device for raising crystallization velocity of silicon core during drawing of silicone core

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500569A (en) * 1950-01-13
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
FR1235341A (en) * 1958-03-05 1960-07-08 Siemens Ag Method and apparatus for continuously manufacturing thin mono-crystalline rods
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt

Also Published As

Publication number Publication date
US3293001A (en) 1966-12-20
DE1162329B (en) 1964-02-06
GB944192A (en) 1963-12-11
CH401919A (en) 1965-11-15
GB930432A (en) 1963-07-03
NL269311A (en)
DE1202248B (en) 1965-10-07

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