CH334815A - Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers - Google Patents

Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers

Info

Publication number
CH334815A
CH334815A CH334815DA CH334815A CH 334815 A CH334815 A CH 334815A CH 334815D A CH334815D A CH 334815DA CH 334815 A CH334815 A CH 334815A
Authority
CH
Switzerland
Prior art keywords
treating
semiconductor body
semiconductor
Prior art date
Application number
Other languages
German (de)
English (en)
Inventor
Willem Haayman Pieter
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH334815A publication Critical patent/CH334815A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)
CH334815D 1954-09-15 1955-09-13 Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers CH334815A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL334815X 1954-09-15

Publications (1)

Publication Number Publication Date
CH334815A true CH334815A (de) 1958-12-15

Family

ID=19784505

Family Applications (1)

Application Number Title Priority Date Filing Date
CH334815D CH334815A (de) 1954-09-15 1955-09-13 Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers

Country Status (4)

Country Link
BE (1) BE541273A (fr)
CH (1) CH334815A (fr)
FR (1) FR1130945A (fr)
NL (2) NL190810A (fr)

Also Published As

Publication number Publication date
NL102008C (fr)
BE541273A (fr)
FR1130945A (fr) 1957-02-13
NL190810A (fr)

Similar Documents

Publication Publication Date Title
CH365802A (de) Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers
CH366188A (de) Verfahren zur Behandlung von Metallgegenständen
CH363971A (de) Verfahren zur Reinigung von Silizium
CH341571A (de) Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart
CH341572A (de) Verfahren zur Herstellung eines Halbleitergerätes
CH341910A (de) Verfahren zum Herstellen stabförmiger Halbleiterkristalle
CH349284A (de) Verfahren und Vorrichtung zur Behandlung der Oberfläche von Körpern
CH339023A (de) Verfahren zum Ätzen der Oberfläche eines halbleitenden Körpers aus einem Tellurid eines zweiwertigen Metalles
CH345079A (de) Verfahren zur Herstellung von Flächengleichrichtern bzw. -transistoren
CH385492A (de) Verfahren zum Herstellen von organischen siliciumhaltigen Verbindungen
CH345662A (de) Verfahren zur Behandlung der Oberfläche von Körpern in einer Glimmentladung
CH341912A (de) Flächentransistor und Verfahren zu dessen Herstellung
CH398805A (de) Verfahren zur Oberflächenbehandlung eines Halbleiter-Bauelementes
CH334815A (de) Verfahren zur Behandlung der Oberfläche eines Halbleitkörpers
CH352055A (de) Verfahren zur elektrolytischen Behandlung eines Körpers aus halbleitendem Material
AT193945B (de) Verfahren zur Änderung der spezifischen Leitfähigkeit eines Halbleitermaterials
CH343431A (de) Verfahren zur Behandlung der Lauffläche von Schienen
CH338267A (de) Verfahren zur Schmierung bewegter Maschinenteile
CH370529A (de) Verfahren zur Behandlung eines keramischen Giessrohrs
DD11918A1 (de) Verfahren zur herstellung von analgetisch wirksamen araliphatischen aminen
AT188344B (de) Verfahren zur photo-mechanischen Oberflächenbearbeitung von Gegenständen
AT193431B (de) Verfahren zur Materialbehandlung
AT188756B (de) Verfahren und Einrichtung zur Behandlung von begrenzten Oberflächenteilen eines Körpers mit einer Flüssigkeit
CH363654A (de) Verfahren zur Herstellung von N-Aryl-, N-Heteroaryl- und N-Aralkyl-alkansultamen
AT192744B (de) Verfahren zum Konservieren