CA993567A - Junction gated field effect transistor - Google Patents

Junction gated field effect transistor

Info

Publication number: CA993567A
Authority: CA; Canada
Prior art keywords: field effect; effect transistor; gated field; junction gated; junction
Prior art date: 1973-04-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA188,102A

Inventor

Akiyasu Ishitani

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-04-25

Filing date

1973-12-13

Publication date

1976-07-20

1973-12-13 Application filed by Sony Corp filed Critical Sony Corp

1976-07-20 Application granted granted Critical

1976-07-20 Publication of CA993567A publication Critical patent/CA993567A/en

Status Expired legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Junction Field-Effect Transistors (AREA)
Bipolar Transistors (AREA)

CA188,102A 1973-04-25 1973-12-13 Junction gated field effect transistor Expired CA993567A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4744573A JPS49134282A (en)	1973-04-25	1973-04-25

Publications (1)

Publication Number	Publication Date
CA993567A true CA993567A (en)	1976-07-20

Family

ID=12775330

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA188,102A Expired CA993567A (en)	1973-04-25	1973-12-13	Junction gated field effect transistor

Country Status (7)

Country	Link
JP (1)	JPS49134282A (en)
CA (1)	CA993567A (en)
DE (1)	DE2339444C2 (en)
FR (1)	FR2227645B1 (en)
GB (1)	GB1412904A (en)
IT (1)	IT993383B (en)
NL (1)	NL7312535A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2503800C2 (en) *	1975-01-30	1984-02-16	Sony Corp., Tokyo	Junction field effect transistor
JPS51129184A (en) *	1975-05-02	1976-11-10	Nec Corp	Vertical type field efect transistor
JPS5342683A (en) *	1976-09-30	1978-04-18	Mitsubishi Electric Corp	Vertical field effect transistor
JPS5846874B2 (en) *	1977-04-27	1983-10-19	三菱電機株式会社	Junction field effect transistor
JPS5680172A (en) *	1979-12-04	1981-07-01	Seiko Epson Corp	Semiconductor device
FR2480502A1 (en) *	1980-04-14	1981-10-16	Thomson Csf	DEEP GRID SEMICONDUCTOR DEVICE, ITS APPLICATION TO A BLOCKABLE DIODE, AND MANUFACTURING METHOD
FR2480505A1 (en) *	1980-04-14	1981-10-16	Thomson Csf	VERTICALLY OPERATED POWER JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1539877A1 (en) *	1965-11-19	1969-12-11	Itt Ind Gmbh Deutsche	Switchable semiconductor component
FR2147883B1 (en) *	1971-08-05	1977-01-28	Teszner Stanislas

1973
- 1973-04-25 JP JP4744573A patent/JPS49134282A/ja active Pending
- 1973-08-01 GB GB3662573A patent/GB1412904A/en not_active Expired
- 1973-08-03 DE DE19732339444 patent/DE2339444C2/en not_active Expired
- 1973-08-27 FR FR7330927A patent/FR2227645B1/fr not_active Expired
- 1973-09-11 NL NL7312535A patent/NL7312535A/xx not_active Application Discontinuation
- 1973-09-24 IT IT2926973A patent/IT993383B/en active
- 1973-12-13 CA CA188,102A patent/CA993567A/en not_active Expired

Also Published As

Publication number	Publication date
NL7312535A (en)	1974-10-29
DE2339444A1 (en)	1974-10-31
JPS49134282A (en)	1974-12-24
IT993383B (en)	1975-09-30
DE2339444C2 (en)	1985-05-15
GB1412904A (en)	1975-11-05
FR2227645B1 (en)	1977-08-05
FR2227645A1 (en)	1974-11-22

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