CA2887186A1 - Selective transferring and bonding of pre-fabricated micro-devices - Google Patents

Selective transferring and bonding of pre-fabricated micro-devices Download PDF

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Publication number
CA2887186A1
CA2887186A1 CA2887186A CA2887186A CA2887186A1 CA 2887186 A1 CA2887186 A1 CA 2887186A1 CA 2887186 A CA2887186 A CA 2887186A CA 2887186 A CA2887186 A CA 2887186A CA 2887186 A1 CA2887186 A1 CA 2887186A1
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CA
Canada
Prior art keywords
micro
substrate
devices
pixel
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2887186A
Other languages
French (fr)
Inventor
Gholamreza Chaji
Ehsanallah Fathi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ignis Innovation Inc
Original Assignee
Ignis Innovation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA2887186A priority Critical patent/CA2887186A1/en
Application filed by Ignis Innovation Inc filed Critical Ignis Innovation Inc
Priority to US15/002,662 priority patent/US20160219702A1/en
Priority to PCT/IB2016/050307 priority patent/WO2016116889A1/en
Priority to CN202110684431.4A priority patent/CN113410146A/en
Priority to DE112016000447.8T priority patent/DE112016000447T5/en
Priority to CN201680006964.4A priority patent/CN107851586B/en
Priority to US15/060,942 priority patent/US10134803B2/en
Publication of CA2887186A1 publication Critical patent/CA2887186A1/en
Priority to CN202310495809.5A priority patent/CN116525532A/en
Priority to CN201780013977.9A priority patent/CN109075119B/en
Priority to US16/107,680 priority patent/US20180358404A1/en
Priority to US16/107,692 priority patent/US10847571B2/en
Priority to US16/931,132 priority patent/US11728302B2/en
Priority to US17/200,467 priority patent/US20210202572A1/en
Priority to US17/365,708 priority patent/US11476216B2/en
Priority to US17/365,634 priority patent/US11735545B2/en
Priority to US17/569,918 priority patent/US11735547B2/en
Priority to US17/569,900 priority patent/US11735546B2/en
Priority to US17/569,893 priority patent/US11728306B2/en
Priority to US17/730,719 priority patent/US20220254745A1/en
Abandoned legal-status Critical Current

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Abstract

Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.

Description

Selective transferring and bonding of pre-fabricated micro-devices Introduction Selective transferring and bonding of pre-fabricated micro-devices from the native substrate to a host substrate containing backend circuitry allows us to develop more efficient integration schemes for optical and electronic systems such as display and LED light panels.
In one embodiment, the donor substrate consists of an array of pre-fabricated micro-devices and the host substrate is a system substrate with an array of contact pads.
[-111 1-11 Figure 1: An array of pre-fabricated micro-devices and the array of contact pads on the system substrate.
To transfer some of the micro-devices from donor substrate to the system substrate, first they are aligned and brought together. Using some mechanisms, contact pads apply a force of F' on all micro-devices attached to the donor substrate. This force may have different sources such as electrostatic, magnetic or adhesion (mechanical, chemical,..). Subsequently, using an operation such as laser lift-off (LLD), the sticking force that holds micro-devices to the donor substrate is manipulated. This manipulation is selective so that it may change the adhesion of individual or a group of micro devices. As Figure 3 shows the net force inserted on the micro-devices is the difference between F, (i=1,2,3..) and the F' (Fnet= F - F,). Micro-devices with positive Fnet will be detached and transferred to the host (system) substrate.

r * * * * * *
F' F' r,-.
F' r F' Figure 2: Pre-fabricated micro-devices and the array of contact pads are aligned and brought together. Force F' is applied to the micro-device arrays.
After transferring the selected micro-devices to the system substrate, an operation is performed to create a phase change in the contact pad bonding layer and the micro-device electrode to permanently bond the micro-device to the system substrate. While this operation is performed, force F' holds the micro-devices on the host contact pads. A variety of operations can be performed to control the phase of the bonding layer such as using a global heater.

A A A

1-1Z1¨
F---1-1 1-1-1 I¨I-1 * * * * * *
F' F' F' r F. r Figure 3: Micro-devices with net force (F'-Fi) >0 are transferred to the system substrate.
In one embodiment, force F' applied to the micro-devices from the contact pads on the host substrate can be designed to be different for the individual or a group of contact pads.
As it is shown in Figure 3, in this case the net force inserted on the micro-device "i" is Fnet = ri - F.
Micro-devices with Fnet > 0 will be transferred to the host after removing the donor substrate.

A A A A A A
III [I tI Il III F1 t t t t t , , T._ , ,.... , r_ , F1 r 2 r3 F4 r6 r6, Figure 4: Pre-fabricated micro-devices and the array of contact pads are aligned and brought together. Force Fr is applied to the micro-devices and can be different for individual or a group of contact pads.

A A A
I
L.... -1-1 1 1 t t t t t t F6' , , F1 F2 F3 F4 F5 r6.
(5a) F2 F4 Fs A A
held by surface tension to the donor substrate F-777 ;77; ;--r;
F2' F3' F4. F5' F6' (5b) Figure 5 a,b: Micro-devices with net force (Fi'-Fi) >0 are transferred to the system substrate.
Following scheme describes exemplary implementations of contact pads on the system substrate. As mentioned before, this invention describes a method of selective transferring and bonding an array of micro-devices to a system substrate. In one aspect, the system substrate can have any sizes and may contain the necessary circuitry to derive the micro-devices or process the output signal of micro-devices.
In another embodiment the substrates consist of connection pads and metallic tracks. In both cases, the pads equipped with a mechanism to electrostatically hold the micro-devices during the transfer from the host substrate to the system substrate. As an example, the micro-devices can be micro LED devices and the substrate, the back-plane driver circuitry.
In another case, to prevent tilting of micro-devices, while detaching them from the donor substrate, one can manipulate forces so that a small gap will be created between the pads in the system substrate, and micro-devices with negative net force (ri - F,) (Figure 5 (b)). In this case, micro-devices with positive net forces are still attached to the donor substrate through some form of surface tension. Using some methods such as hot curing the system substrate, micro-devices with positive net force will be attached permanently to the pads on the system substrate. In this case, upon completely removing the donor substrate, micro-devices transferred to the system substrate will keep their alignment.

Selective transfer of semiconductor devices using electrostatic force In one aspect, the system substrate has an array of contact pads as shown in Figure 6.

Figure 6: Array of pads on the system substrate. Contact pads are surrounded by a ring of metal/dielectric bi-layer.
In this case, each contact pad is surrounded by a ring of metal/dielectric bi-layer. The device pad can be electrically conductive pads or just a mechanical pad for holding the device (this definition is applicable to all the invention listed in this document). A trench (bank) can be used to create an opening for device pad (this definition is applicable to all the invention listed in this document). There can be more than one pad for the device with different functionality. The metallic layer of these rings can be addressed separately or connected together and controlled by one signal. Figure 7 shows a cross section of an example of this ring. There can be overlap between the electrostatic electrode and the contact pads and the electrostatic electrode can be in different plane compare to the device pad (this definition is applicable to all the invention listed in this document).
i Figure 7: Cross section of the contact pads.
In this scheme, micro-devices are aligned with the contact pads and they are brought in contact with them (Figure 8).

Figure 8: First micro-devices and the contact pads are aligned and brought together.
Different micro-devices can be selected for bonding by applying a voltage to the electrostatic (bonding) pads (here the metallic ring). The electro-static force produced by the voltage across the dielectric can temporary holds the micro-devices in contact with the contact pads (Figure 9).
Figure 9: a voltage is applied to the bonding pads (here the metallic ring) to temporary holds the micro-device in contact with the contact pads.
Later on, using some operations such as laser lift-off or heating, the force holding the micro-devices to the carrier substrate is manipulated. This manipulation leads to a net force toward the host (system) substrate and transferring the selected micro-devices upon removing the carrier substrate.

d 1 , kr. 1 r I 1 iW66-til J 1111111 , Figure 10: Array of pads on the system substrate. Each contact pad consists of a metallic electrode and a metal/dielectric stack part.
In another embodiment shown in Figure 10, each contact pad consists of a metallic electrode and a metal/dielectric bilayer section.
In another embodiment shown in Figure 11, each contact pad in the array consists of a metallic electrode (in the form of a symmetric cross) and four square metal/dielectric stacks at the edges of the contact pad.
_ P I In gem F I

6.6 W` r Figure 11: Array of pads on the system substrate. E, ch contact pad consists of a metallic electrode and four metal/dielectric stack sections at for edges of the contact pad.

In this embodiment, the four metal/dielectric bilayers in a single contact pad can be connected together or one or more of them can be addressed separately. Similarly to the embodiments in Figure 6 and Figure 10, metal/dielectric bilayers, here is called bonding pads, for a single contact pad can be addressed separately or connected to the bonding pads of other contact pads and be addressed collectively. Other configuration in regards to bonding and contact pads are possible such as having the bonding pads in the middle of the contact pad.
In general, a variety of different electrode and bonding pad can be designed and the scope of the invention is not limited to the above arrangements.
.---=
Omer Sobs.*
f-Aficro.devu Figure 12: An example of a micro-device with mesa structure which facilitates self-alignment of micro-devices with contact pads of the system substrate.
One can also design the shape of electrode and contact pads in a way to avoid micro-devices to be tilted while detaching from the donor substrate. As an example, Figure 12 shows an implementation where the micro-device contact has a mesa structure which facilitates the self-alignment of micro-devices with the contact pads of system substrate.
In another possible structure, vertical (or combination of vertical and horizontal) force is used to hold the micro-device in place (please refer to Figure 13). Here, force electrode.
There can be overlap of the device over the force (bonding) electrode for also horizontal force. The vertical force electrode can be created with different method such as via (contact holes) or surface profiling.
In another case, the force electrode can be electrostatic electrode and in another example, they can be piezo electrode to hold the device in place mechanically. If the force electrode is not conductive or if the absence of dielectric layer is not affecting the device functionality, one can avoid the dielectric layer.

Donor Substrate Micro-devise Contact Dielectric electrode Micro Device - Force electrode ______________________ I __ III
System Substrate System substrate Contact electrode Figure 13: An example of a micro-device with mesa structure which facilitates self-alignment of micro-devices with contact pads of the system substrate.
,i4411J
F' =.-Figure 14: The system substrate can act as a dielectric. Applying a voltage to the back of the system substrate inserts an electrostatic force on the micro-devices.
In addition, instead of implementing the metal/dielectric bilayers in the system substrate, one can use the system substrate as the dielectric layer to insert the electrostatic force to the micro-devices on the donor substrate. Figure 14 highlight an example for global force configuration. This force will hold the system and donor substrate in contact temporarily. Later on, using other processes such as laser lift-off one can detach the selected micro-devices from donor substrate.

Selective transfer of semiconductor devices using mechanical force In another aspect of the invention shown in Figure 15, the electrode pads on the system substrate can be patterned to form a trench structure.
Figure 15: Trench pattern on the system electrode pads. Micro-devices on the carrier substrate are aligned and brought close to the electrode pads on the system substrate.
First, micro-device arrays are aligned with the pads on the system substrate.
Considering the larger size of the trenches, micro-devices can be accurately placed into them (see Figure 15). The material of the system substrate electrode is chosen to have a temperature expansion coefficient (CTE) lower than that of the micro-device electrode. Consequently, heating up this setup, result in a larger expansion of the micro-device electrodes compared to the trench structures. This will cause a temporary mechanical bonding between the micro-device arrays and the system substrate. Later on, using some methods like laser lift-off, the force holding micro-devices to the carrier substrate can selectively be decreased. This manipulation leads to a net force toward the host (system) substrate and transferring the selected micro-devices upon removing the carrier substrate (Figure 17).

Figure 16: Micro-devices are placed into the electrode trenches on the system substrate.
Figure 17: Micro-devices are placed into the electrode trenches on the system substrate with mechanical grip.

11-1;:j-i 1.-N2 ij-i 1-1-1 liZil LI-1 i __________ r 1 __ r 1 __ r 1 __ r 1 __ 1" 1 __ r , Ii H ;-.;
1-1-1 LL:j im-i -1 r 1 ________________________________________ r 1 ____________________________________________________________ . r Figure 18: process flow of selective transferring of micro-devices to a system substrate using mechanical grip and laser lift-off process.

General Terms In case of using electrostatic force to hold the devices on place, the electrostatic electrode in the system substrate can be at higher level, similar level or lower level than main contact electrode. Also, the electrostatic electrode can have overlap with contact electrode.
In case of electrostatic force, the donor substrate can be hold in close proximity (instead of full contact) with system substrate and the force can attract the devices with weaker contact to the donor substrate and bring them in the system substrate.
In case of electrostatic force, the electrostatic electrode patterning can create a uniform field around the contact pads so that avoid tilting and assisting in alignment. In this case, if the devices are slightly out of alignment, the uniform force will improve the alignment.
In case of the electrostatic force, the system substrate and/or the devices on the system substrate needs to be biased to the point to eliminate large potential differences caused by electrostatic electrode and so protect the devices on the system.
In another case, a shield layer can be useG to protect the devices on the system substrate from the high potential on the electrostatic electrodes.
In general, the process of creating different connection force between devices on donor substrate can be done at the same time as the donor substrate is brought close to the system substrate (or put in contact with system substrate) or it can be done first and then the two substrates are brought in close proximity.
In general, one can completely separate the donor and system substrates before annealing to create stronger contact. In another method, one can separate them slightly so that there is no contact between the remaining devices on donor substrate and the system substrate and then anneal the system substrate.
This invention is not limited to the single pad micro-devices and may be applied to the multi-pad devices as well.
Both system substrate and donor substrate may be conductive or non-conductive (such as glass, plastics, etc.).

In general, a variety of different electrode and bonding pad can be designed and the scope of the invention is not limited to the above mentioned arrangements.
Micro-devices may first be transferred to another substrate and later on selectively bonded to the system substrate.
The above mentioned bonding methods may be used to selectively de-bond micro-devices from the system substrate.

Claims (14)

WHAT IS CLAIMED IS:
1. A method of integrated device fabrication, the integrated device comprising a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate, the method comprising:
extending an active area of a first sub-pixel to an area larger than an area of a first micro device of the first sub-pixel by patterning of a filler layer about the first micro device and between the first micro device and at least one second micro device.
2. A method according to claim 1 further comprising:
fabricating at least one reflective layer covering at least a portion of one side of the patterned filler layer, the reflective layer for confining at least a portion of incoming or outgoing light within the active area of the sub-pixel.
3. A method according to claim 2 wherein the reflective layer is fabricated as an electrode of the micro device.
4. A method according to claim 1 wherein the patterning of the filler layer further patterns the filler layer about a further sub-pixel.
5. A method according to claim 1 wherein the patterning of the filler layer further is performed with a dielectric filler material.
6. An integrated device comprising:
a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate; and a patterned filler layer formed about a first micro device of a first sub-pixel and between the first micro device and at least one second micro device, the patterned filler layer extending an active area of the first sub-pixel to an area larger than an area of the first micro device.
7. An integrated device according to claim 6 further comprising:
at least one reflective layer covering at least a portion of one side of the patterned filler layer, the reflective layer for confining at least a portion of incoming or outgoing light to the active area of the first sub-pixel.
8. An integrated device according to claim 7 wherein the reflective layer is an electrode of the micro device.
9. An integrated device according to claim 7 wherein the patterned filler layer is formed about a further sub-pixel.
10. A method of integrated device fabrication, the device comprising a plurality pixels each comprising at least one sub-pixel comprising a micro device integrated on a substrate, the method comprising:
integrating at least one micro device into a receiver substrate; and subsequently to the integration of the at least one micro device, integrating at least one thin-film electro-optical device into the receiver substrate.
11. A method according to claim 10, wherein integrating the at least one thin-film electro-optical device comprises forming an optical path for the micro device through all or some layers of the at least one electro-optical device.
12. A method according to claim 10 wherein integrating the at least one thin-film electro-optical device is such that an optical path for the micro device is through a surface or area of the integrated device other than a surface or area of the electro-optical device.
13. A method according to claim 10, further comprising fabricating an electrode of the thin-film electro-optical device, the electrode of the thin-film electro-optical device defining an active area of at least one of a pixel and a sub-pixel.
14. A
method of according to claim 10, further comprising fabricating an electrode which serves as a shared electrode of both the thin-film electro-optical device and the light emitting micro device.
CA2887186A 2015-01-23 2015-05-12 Selective transferring and bonding of pre-fabricated micro-devices Abandoned CA2887186A1 (en)

Priority Applications (19)

Application Number Priority Date Filing Date Title
CA2887186A CA2887186A1 (en) 2015-05-12 2015-05-12 Selective transferring and bonding of pre-fabricated micro-devices
US15/002,662 US20160219702A1 (en) 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate
PCT/IB2016/050307 WO2016116889A1 (en) 2015-01-23 2016-01-21 Selective micro device transfer to receiver substrate
CN202110684431.4A CN113410146A (en) 2015-01-23 2016-01-21 Selective micro device transfer to a receptor substrate
DE112016000447.8T DE112016000447T5 (en) 2015-01-23 2016-01-21 Selective micro-device transfer to a receptor substrate
CN201680006964.4A CN107851586B (en) 2015-01-23 2016-01-21 Selective micro device transfer to a receptor substrate
US15/060,942 US10134803B2 (en) 2015-01-23 2016-03-04 Micro device integration into system substrate
CN202310495809.5A CN116525532A (en) 2015-01-23 2017-03-06 Integrated device manufacturing method
CN201780013977.9A CN109075119B (en) 2015-01-23 2017-03-06 Integrated device manufacturing method
US16/107,680 US20180358404A1 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/107,692 US10847571B2 (en) 2015-01-23 2018-08-21 Micro device integration into system substrate
US16/931,132 US11728302B2 (en) 2015-01-23 2020-07-16 Selective micro device transfer to receiver substrate
US17/200,467 US20210202572A1 (en) 2015-01-23 2021-03-12 Micro device integration into system substrate
US17/365,708 US11476216B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/365,634 US11735545B2 (en) 2015-01-23 2021-07-01 Selective micro device transfer to receiver substrate
US17/569,918 US11735547B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,900 US11735546B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/569,893 US11728306B2 (en) 2015-01-23 2022-01-06 Selective micro device transfer to receiver substrate
US17/730,719 US20220254745A1 (en) 2015-01-23 2022-04-27 Selective micro device transfer to receiver substrate

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017149521A1 (en) * 2016-03-04 2017-09-08 Vuereal Inc. Micro device integration into system substrate
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
US10847571B2 (en) 2015-01-23 2020-11-24 Vuereal Inc. Micro device integration into system substrate
WO2022082302A1 (en) * 2020-10-19 2022-04-28 Vuereal Inc. Flip chip microdevice structure
US11476216B2 (en) 2015-01-23 2022-10-18 Vuereal Inc. Selective micro device transfer to receiver substrate

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134803B2 (en) 2015-01-23 2018-11-20 Vuereal Inc. Micro device integration into system substrate
US10700120B2 (en) 2015-01-23 2020-06-30 Vuereal Inc. Micro device integration into system substrate
US10847571B2 (en) 2015-01-23 2020-11-24 Vuereal Inc. Micro device integration into system substrate
US11476216B2 (en) 2015-01-23 2022-10-18 Vuereal Inc. Selective micro device transfer to receiver substrate
US11728306B2 (en) 2015-01-23 2023-08-15 Vuereal Inc. Selective micro device transfer to receiver substrate
US11728302B2 (en) 2015-01-23 2023-08-15 Vuereal Inc. Selective micro device transfer to receiver substrate
US11735623B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Micro device integration into system substrate
US11735547B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
US11735546B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
US11735545B2 (en) 2015-01-23 2023-08-22 Vuereal Inc. Selective micro device transfer to receiver substrate
WO2017149521A1 (en) * 2016-03-04 2017-09-08 Vuereal Inc. Micro device integration into system substrate
WO2022082302A1 (en) * 2020-10-19 2022-04-28 Vuereal Inc. Flip chip microdevice structure

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