CA2461338A1 - Low viscosity precursor compositions and methods for the deposition of conductive electronic features - Google Patents

Low viscosity precursor compositions and methods for the deposition of conductive electronic features Download PDF

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Publication number
CA2461338A1
CA2461338A1 CA002461338A CA2461338A CA2461338A1 CA 2461338 A1 CA2461338 A1 CA 2461338A1 CA 002461338 A CA002461338 A CA 002461338A CA 2461338 A CA2461338 A CA 2461338A CA 2461338 A1 CA2461338 A1 CA 2461338A1
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recited
precursor composition
metal
substrate
metal precursor
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Granted
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CA002461338A
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French (fr)
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CA2461338C (en
Inventor
Toivo T. Kodas
Mark J. Hampden-Smith
Paolina Atanassova
Klaus Kunze
Karel Vanheusden
Hugh Denham
Aaron Stump
Allen Schult
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Cabot Corp
Original Assignee
Superior Micropowders, Llc
Toivo T. Kodas
Mark J. Hampden-Smith
Paolina Atanassova
Klaus Kunze
Karel Vanheusden
Hugh Denham
Aaron Stump
Allen Schult
Cabot Corporation
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Publication of CA2461338A1 publication Critical patent/CA2461338A1/en
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Publication of CA2461338C publication Critical patent/CA2461338C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1142—Conversion of conductive material into insulating material or into dissolvable compound
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/121—Metallo-organic compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H05K3/4069—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in organic insulating substrates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Conductive Materials (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Abstract A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features.
Another particularly preferred precursor composition includes copper metal for the formation of highly conductive copper features.

Claims (197)

1. A metal precursor composition having a viscosity of not greater than 1000 centipoise, comprising:
(a) a metal precursor compound; and (b) a conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°C compared to the dry metal precursor compound, wherein the conversion temperature of said metal precursor composition is not greater than about 200°C.
2. A metal precursor composition as recited in Claim 1, wherein said viscosity is not greater than about 100 centipoise.
3. A metal precursor composition as recited in Claim 1, wherein said viscosity is not greater than about 50 centipoise.
4. A metal precursor composition as recited in Claim 1, wherein said metal precursor compound is a silver metal carboxylate compound.
5. A metal precursor composition as recited in Claim 1, wherein said metal precursor compound is a silver metal oxide
6. A metal precursor composition as recited in Claim 1, wherein said metal precursor compound is an inorganic silver compound
7. A metal precursor composition as recited in Claim 1, wherein said metal precursor compound is a silver halogenated carboxylate compound.
8. A metal precursor composition as recited in Claim 1, wherein said metal precursor compound is silver trifluoroacetate.
9. A metal precursor composition as recited in Claim 1, wherein said metal precursor composition comprises at least 40 wt.% percent metal.
10. A metal precursor composition as recited in Claim 1, further comprising a crystallization inhibitor.
11. A metal precursor composition as recited in Claim 1, further comprising a crystallization inhibitor selected from the group consisting of glycerol, glycolic acid, lactic acid, humectants and surfactants.
12. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent is a liquid that functions as a vehicle for said metal precursor composition.
13. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent is a liquid that functions as a solvent for said metal precursor compound.
14. Metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent is selected from the group consisting of alcohols, amines, amides, boranes, borohydrates, borohydrides, and organosilanes.
15. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises an alcohol.
16. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises an amine.
17. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises an amide.
18. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises terpineol.
19. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE).
20. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc).
21. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises diethyleneglycol butylether (DEGBE) and N,N-dimethyl acetamide (DMAc).
22. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises N,N-dimethyl acetamide (DMAc) and terpineol.
23. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent comprises a palladium compound.
24. A metal precursor composition as recited in Claim 1, wherein said conversion reaction inducing agent is selected from the group consisting of palladium acetate, palladium tetra-amine hydroxide, and palladium trifluoroacetate.
25. A metal precursor composition as recited in Claim 1, wherein said conversion reducing agent comprises diethyleneglycol butylether (DEGBE) and the molar ratio of DEGBE to said metal precursor compound is from about 0.75 to about 1.25.
26. A metal precursor composition as recited in Claim 1, further comprising a vehicle.
27. A metal precursor composition as recited in Claim 1, further comprising a solvent wherein said metal precursor compound is dissolved in said solvent.
28. A metal precursor composition as recited in Claim 1, further comprising a solvent wherein said metal precursor compound is suspended in said solvent.
29. A metal precursor composition as recited in Claim 1, further comprising an aqueous-based solvent.
30. A metal precursor composition as recited in Claim 1, further comprising particles.
31. A metal precursor composition as recited in Claim 1, further comprising substantially spherical particles.
32. A metal precursor composition as recited in Claim 1, further comprising metallic particles.
33. A metal precursor composition as recited in Claim 1, further comprising silver metal particles.
34. A metal precursor composition as recited in Claim 1, further comprising nanoparticles having a volume median particle size of not greater than 100 nanometers.
35. A metal precursor composition as recited in Claim 1, further comprising nanoparticles having a volume median particle size of not greater than about 75 nanometers.
36. A metal precursor composition as recited in Claim 1, wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 50°C.
37. A metal precursor composition as recited in Claim 1, wherein said precursor composition comprises said conversion reaction inducing agent in an amount sufficient to reduce the conversion temperature of said metal precursor compound by at least about 100°C.
38. A metal precursor composition having a viscosity of not greater than about 1000 centipoise, comprising:
(a) a silver metal compound;
(b) silver particles; and (c) a conversion reaction inducing agent in amount sufficient to reduce the conversion temperature of said metal precursor composition by at least about 25°C as compared to the dry silver metal compound, wherein said metal precursor composition has a conversion temperature of not greater than about 250°C.
39. A metal precursor composition as recited in Claim 38, wherein said silver metal compound is a silver carboxylate compound.
40. A metal precursor composition as recited in Claim 38, wherein said conversion reaction inducing agent is an alcohol.
41. A metal precursor composition as recited in Claim 38, wherein said conversion reaction inducing agent is ethylene glycol.
42. A metal precursor composition as recited in Claim 38, wherein said conversion reaction inducing agent is terpineol.
43. A metal precursor composition as recited in Claim 38, wherein said metal precursor composition has a viscosity of not greater than 100 centipoise.
44. A metal precursor composition as recited in Claim 38, wherein said particles have a volume median particle size of not greater than 100 nanometers.
45. A metal precursor composition as recited in Claim 38, wherein said metal precursor composition has a conversion temperature of not greater than 225°C.
46. A metal precursor composition as recited in Claim 38, wherein said metal precursor composition has a conversion temperature of not greater than 200°C.
47. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
(a) providing a precursor composition comprising a silver metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 250°C, wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of the pure bulk silver.
48. A method as recited in Claim 47, wherein said feature has a minimum feature size of not greater than about 100 µm.
49. A method as recited in Claim 47, wherein said feature has a minimum feature size of not greater than about 75 µm.
50. A method as recited in Claim 47, wherein said feature has a minimum feature size of not greater than about 50 µm.
51. A method as recited in Claim 47, wherein said feature has a minimum feature size of not greater than about 25 µm.
52. A method as recited in Claim 47, wherein said feature has a thickness of at least about 0.05 µm.
53. A method as recited in Claim 47, wherein said feature has a thickness of at least about 0.1 µm.
54. A method as recited in Claim 47, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.
55. A method as recited in Claim 47, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
56. A method as recited in Claim 47, wherein said precursor composition further comprises metallic particles.
57. A method as recited in Claim 47, wherein said precursor composition further comprises metallic nanoparticles.
58. A method as recited in Claim 47, wherein said precursor composition further comprises a palladium compound.
59. A method as recited in Claim 47, wherein said deposition step comprises depositing said precursor composition using a tool selected from the group consisting of an ink-jet device, a syringe dispense device, an aerosol jet, an intaglio printer, a roll printer and a sprayer.
60. A method as recited in Claim 47, wherein said deposition step comprises depositing said precursor composition using an ink-jet device.
61. A method as recited in Claim 47, wherein said conversion temperature is not greater than about 225°C.
62. A method as recited in Claim 47, wherein said conversion temperature is not greater than about 200°C.
63. A method as recited in Claim 47, wherein said conversion temperature is not greater than about 150°C.
64. A method as recited in Claim 47, wherein said heating step comprises heating said precursor composition using a laser.
65. A method as recited in Claim 47, wherein said heating step comprises heating said precursor composition in a furnace.
66. A method as recited in Claim 47, wherein said heating step comprises heating using an infrared lamp.
67. A method as recited in Claim 47, wherein said conductive feature has a resistivity of not greater than about 6 times the pure bulk metal.
68. A method as recited in Claim 47, wherein said conductive feature has a resistivity of not greater than about 4 times the pure bulk metal.
69. A method as recited in Claim 47, wherein said conductive feature has a resistivity of not greater than about 2 times the pure bulk metal.
70. A method as recited in Claim 47, wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e.
wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene (ABS), flexible fiber board, non-woven polymeric fabric and cloth.
71. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
(a) providing a precursor composition comprising a metal precursor compound, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°C, wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.
72. A method as recited in Claim 71, wherein said metal is silver.
73. A method as recited in Claim 71, wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.
74. A method as recited in Claim 71, wherein said conversion temperature is not greater than about 100°C.
75. A method as recited in Claim 71, wherein said depositing step comprises depositing said precursor composition using a direct-write tool.
76. A method as recited in Claim 71, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.
77. A method as recited in Claim 71, wherein said conductive feature has a minimum feature size of not greater than about 200 µm.
78. A method as recited in Claim 71, wherein said conductive feature has a minimum feature size of not greater than about 100 µm.
79. A method for the fabrication of a conductive feature on a substrate, comprising the steps of:
(a) providing a precursor composition comprising silver particles, wherein said precursor composition has a viscosity of not greater than about 50 centipoise and a surface tension of from about 20 to 50 dynes/cm;
(b) depositing said precursor composition on a substrate; and (c) converting said precursor composition to a conductive feature by heating said precursor composition to a conversion temperature of not greater than about 150°C, wherein said conductive feature has a resistivity of not greater than about 100 times the resistivity of the pure bulk metal.
80. A method as recited in Claim 79, wherein said particles are nanoparticles having an average size of not greater than about 100 nanometers.
81. A method as recited in Claim 79, wherein said conductive feature has a resistivity of not greater than about 80 times the resistivity of the bulk metal.
82. A method as recited in Claim 79, wherein said conversion temperature is not greater than about 100°C.
83. A method as recited in Claim 79, wherein said depositing step comprises depositing said precursor composition using a direct-write tool.
84. A method as recited in Claim 79, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.
85. A method as recited in Claim 79, wherein said conductive feature has a minimum feature size of not greater than about 200 µm.
86. A method as recited in Claim 79, wherein said conductive feature has a minimum feature size of not greater than about 100 µm.
87. A method for the fabrication of an electronic device, comprising the steps of:
(a) providing a substrate comprising at least a first non-linear element disposed on said substrate;
(b) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace contacting said first non-linear element, wherein said precursor trace has a minimum size of not greater than about 200 pm; and (c) heating said deposited precursor composition to a temperature of not greater than about 200°C to form a conductive feature electrically coupled to said first non-linear element, said conductive feature having a minimum feature size of not greater than about 200 µm and a resistivity of not greater than about 200 times the resistivity of the bulk metal.
88. A method as recited in Claim 87, wherein said minimum size of said trace and said conductive feature is not greater than about 100 µm.
89. A method as recited in Claim 87, wherein said minimum size of said trace and said conductive feature is not greater than about 75 µm.
90. A method as recited in Claim 87, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 µm.
91. A method as recited in Claim 87, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 µm.
92. A method as recited in Claim 87, wherein said conductive feature has a thickness of at least about 0.05 µm.
93. A method as recited in Claim 87, wherein said conductive feature has a thickness of at least about 0.1 µm.
94. A method as recited in Claim 87, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.
95. A method as recited in Claim 87, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
96. A method as recited in Claim 87, wherein said heating step comprises heating to a temperature of not greater than about 185°C.
97. A method as recited in Claim 87, wherein said heating step comprises heating to a temperature of not greater than about 150°C.
98. A method as recited in Claim 87, wherein said heating step comprises heating to a temperature of not greater than about 125°C.
99. A method as recited in Claim 87, wherein said substrate is a flexible substrate.
100. A method as recited in Claim 87, wherein said substrate is an organic substrate.
101. A method as recited in Claim 87, wherein said substrate is a polymer substrate.
102. A method as recited in Claim 87, wherein said substrate is a glass substrate.
103. A method as recited in Claim 87, wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.
104. A method as recited in Claim 87, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.
105. A method as recited in Claim 87, wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.
106. A method as recited in Claim 87, wherein said first non-linear element is an organic transistor.
107. A method as recited in Claim 87, wherein said electronic device is an organic light emitting display.
108. A method as recited in Claim 87, wherein said metal is silver.
109. A method as recited in Claim 87, wherein said metal is copper.
110. A method as recited in Claim 87, wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.
111. A method as recited in Claim 87, wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.
112. A method as recited in Claim 87, wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.
113. A method as recited in Claim 87, wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.
114. A method for the fabrication of an electronic component, comprising the steps of:
(a) depositing a low viscosity metal precursor composition onto said substrate in the form of a trace, wherein said precursor trace has a minimum size of not greater than about 200 µm;
(b) heating said deposited precursor composition to a temperature of not greater than about 200°C to form a conductive feature, said conductive feature having a minimum feature size of not greater than about 200 °m and a resistivity of not greater than about 200 times the resistivity of the bulk metal; and (c) depositing at least a first non-linear element on said substrate, wherein said conductive feature is electrically coupled to said first non-linear element.
115. A method as recited in Claim 114, wherein said minimum size of said trace and said conductive feature is not greater than about 100 µm.
116. A method as recited in Claim 114, wherein said minimum size of said trace and said conductive feature is not greater than about 75 µm.
117. A method as recited in Claim 114, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 µm.
118. A method as recited in Claim 114, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 µm.
119. A method as recited in Claim 114, wherein said conductive feature has a thickness of at least about 0.05 µm.
120. A method as recited in Claim 114, wherein said conductive feature has a thickness of at least about 0.1 µm.
121. A method as recited in Claim 114, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.
122. A method as recited in Claim 114, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
123. A method as recited in Claim 114, wherein said heating step comprises heating to a temperature of not greater than about 185°C.
124. A method as recited in Claim 114, wherein said heating step comprises heating to a temperature of not greater than about 150°C.
125. A method as recited in Claim 114, wherein said substrate is a flexible substrate.
126. A method as recited in Claim 114, wherein said substrate is an organic substrate.
127. A method as recited in Claim 114, wherein said substrate is a polymer substrate.
128. A method as recited in Claim 114, wherein said substrate is a glass substrate.
129. A method as recited in Claim 114, wherein said metal precursor composition has a viscosity of not greater than about 50 centipoise.
130. A method as recited in Claim 114, wherein said depositing step comprises depositing said precursor composition using an ink-jet device.
131. A method as recited in Claim 114, wherein said first non-linear element is selected from the group consisting of a diode, a display pixel and a transistor.
132. A method as recited in Claim 114, wherein said first non-linear element is an organic transistor.
133. A method as recited in Claim 114, wherein said electronic device is an organic light emitting display.
134. A method as recited in Claim 114, wherein said metal is silver.
135. A method as recited in Claim 114, wherein said metal is copper.
136. A method as recited in Claim 114, wherein said conductive trace has a resistivity of not greater than about 100 times the resistivity of the bulk metal.
137. A method as recited in Claim 114, wherein said conductive trace has a resistivity of not greater than about 20 times the resistivity of the bulk metal.
138. A method as recited in Claim 114, wherein said conductive trace has a resistivity of not greater than about 10 times the resistivity of the bulk conductor.
139. A method as recited in Claim 114, wherein said conductive trace has a resistivity of not greater than about 6 times the resistivity of the bulk conductor.
140. A method for the fabrication of an interconnect for at least first and second organic-based transistors in an electronic component, comprising the steps of:
(a) depositing a silver metal precursor composition onto said substrate using an ink-jet device and in the form of a trace having a minimum size of not greater than about 100 µm; and (b) heating said deposited precursor composition to a temperature of not greater than 200°C to form a conductive feature having a minimum feature size of not greater than about 100 µm and a resistivity of not greater than about 10 times the resistivity of bulk silver.
141. A method as recited in Claim 140, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.
142. A method as recited in Claim 140, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
143. A method as recited in Claim 140, wherein said minimum size of said trace and said conductive feature is not greater than about 100 °m.
144. A method as recited in Claim 140, wherein said minimum size of said trace and said conductive feature is not greater than about 75 °m.
145. A method as recited in Claim 140, wherein said minimum feature size of said trace and said conductive feature is not greater than about 50 °m.
146. A method as recited in Claim 140, wherein said minimum feature size of said trace and said conductive feature is not greater than about 25 µm.
147. A method as recited in Claim 140, wherein said conductive feature has a thickness of at least about 0.05 µm.
148. A method as recited in Claim 140, wherein said conductive feature has a thickness of at least about 0.1 µm.
149. A method for the fabrication of a conductive feature on a substrate, said method comprising the steps of:
(a) providing a precursor composition comprising a copper metal precursor compound, wherein said precursor composition has a viscosity not greater than 1000 centipoise;
(b) depositing said precursor composition on said substrate using a direct-write tool; and (c) heating said precursor composition to a conversion temperature of not greater than about 350°C to form a conductive feature having a resistivity of not greater than about 40 times the resistivity of bulk copper.
150. A method as recited in Claim 149, wherein said conversion temperature is not greater than about 250°C.
151. A method as recited in Claim 149, wherein said conversion temperature is not greater than about 200°C.
152. A method as recited in Claim 149, wherein said conversion temperature is not greater than about 185°C.
153. A method as recited in Claim 149, wherein said conductive feature has a minimum feature size of not greater than about 200 µm.
154. A method as recited in Claim 149, wherein said conductive feature has a minimum feature size of not greater than about 100 µm.
155. A method as recited in Claim 149, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited precursor composition.
156. A method as recited in Claim 149, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
157. A method as recited in Claim 149, wherein said conductive feature comprises a metal alloy.
158. A method as recited in Claim 149, wherein said copper metal precursor compound comprises Cu-formate.
159. A method as recited in Claim 149, wherein said precursor composition comprises an organic complexing agent.
160. A method as recited in Claim 149, wherein said precursor composition comprises a complexing agent that is an amine compound.
161. A method as recited in Claim 149, wherein said precursor composition comprises a complexing agent that is 3-amino-1-propanol.
162. A method as recited in Claim 149, wherein said precursor composition comprises a complexing agent that is a metal precursor compound.
163. A method as recited in Claim 149, wherein said precursor composition comprises a complexing agent selected from the group consisting of alcohols, amines, amides, boranes, borohydrates, borohydrides, and organosilanes.
164. A method as recited in Claim 149, wherein said precursor composition comprises a crystallization inhibitor.
165. A method as recited in Claim 149, wherein said precursor composition comprises a crystallization inhibitor that is glycerol.
166. A method as recited in Claim 149, wherein said heating step comprises heating at a rate of at least about 100°C per minute.
167. A method as recited in Claim 149, wherein said heating step comprises heating at a rate of at least about 1000°C per minute.
168. A method as recited in Claim 149, wherein said conductive feature is cooled after said heating step at a cooling rate of at least about 100°C per minute.
169. A method as recited in Claim 149, wherein said conductive feature is cooled after said heating step at a cooling rate of at least about 1000°C per minute.
170. A method as recited in Claim 149, wherein said precursor composition further comprises a surface tension modifier.
171. A method as recited in Claim 149, wherein said precursor composition comprises a surface tension modifier that is an alcohol.
172. A method as recited in Claim 149, wherein said precursor composition further comprises a reducing agent.
173. A method as recited in Claim 149, wherein a reducing agent is formed in-situ in said precursor composition.
174. A method as recited in Claim 149, wherein said precursor composition further comprises a reducing agent that is formic acid.
175. A method as recited in Claim 149, wherein said precursor composition further comprises a reducing agent that is an amine compound.
176. A method as recited in Claim 149, wherein said precursor composition further comprises a reducing agent that is 3-amino-1-propanol.
177. A method as recited in Claim 149, wherein said heating step is performed in a reducing atmosphere.
178. A method as recited in Claim 149, wherein said heating step is performed in an inert atmosphere.
179. A method as recited in Claim 149, wherein said precursor composition further comprises particles.
180. A method as recited in Claim 149, wherein said precursor composition further comprises metallic particles.
181. A method as recited in Claim 149, wherein said precursor composition further comprises metallic nanoparticles.
182. A method as recited in Claim 149, wherein said precursor composition further comprises nanoparticles that are capped, with an organic compound.
183. A method as recited in Claim 149, wherein said precursor composition further comprises nanoparticles that are capped with an amine based organic compound.
184. A method as recited in Claim 149, wherein said precursor composition further comprises from about 5 weight percent to about 50 weight percent nanoparticles.
185. A method as recited in Claim 149, wherein said direct-write tool is selected from the group consisting of an ink-jet device, a syringe and an aerosol jet.
186. A method as recited in Claim 149, wherein said direct-write tool is an ink-jet device.
187. A method as recited in Claim 149, wherein said heating step comprises heating said precursor composition using a laser.
188. A method as recited in Claim 149, wherein said heating step comprises heating said precursor composition in a furnace.
189. A method as recited in Claim 149, wherein said conductive feature has a resistivity of not greater than about 20 times the resistivity of bulk copper.
190. A method as recited in Claim 149, wherein said conductive feature has a resistivity of not greater than about 10 times the resistivity of bulk copper.
191. A method as recited in Claim 149, wherein said conductive feature has a resistivity of not greater than about 6 times the resistivity of bulk copper.
192. A method as recited in Claim 149, wherein said precursor composition has a viscosity not greater than 100 centipoise.
193. A method as recited in Claim 149, wherein said precursor composition has a viscosity not greater than 50 centipoise.
194. A method as recited in Claim 149, wherein said substrate is selected from the group consisting of polyfluorinated compounds, polyimides, epoxies (including glass-filled epoxy), polycarbonate, cellulose-based materials (i.e. wood or paper), acetate, polyester, polyethylene, polypropylene, polyvinyl chloride, acrylonitrile, butadiene (ABS), flexible fiber board, non-woven polymeric fabric, cloth, metallic foil, semiconductors, ceramics, glass and combinations thereof.
195. A method for the fabrication of a copper conductive feature on a substrate surface, comprising the steps of:
(a) providing a precursor composition comprising a copper metal precursor compound, wherein said precursor composition has a viscosity not greater than 100 centipoise;
(b) depositing said precursor composition on said substrate using an ink-jet device to form a trace having a minimum size of not greater than about 100 µm; and (c) heating said precursor composition to a temperature of not greater than about 250°C to form a conductive feature having a minimum feature size of not greater than about 100 µm and a resistivity of not greater than about 100 times the resistivity of bulk copper metal.
196. A method as recited in Claim 195, further comprising the step of modifying a first portion of said substrate before said depositing step, wherein said first portion is adapted to confine said deposited precursor composition.
197. A method as recited in Claim 195, further comprising the step of modifying a first portion of said substrate before said depositing step, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited precursor composition.
CA2461338A 2001-10-05 2002-10-04 Low viscosity precursor compositions and methods for the deposition of conductive electronic features Expired - Fee Related CA2461338C (en)

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