CA2382723A1 - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
- Publication number
- CA2382723A1 CA2382723A1 CA002382723A CA2382723A CA2382723A1 CA 2382723 A1 CA2382723 A1 CA 2382723A1 CA 002382723 A CA002382723 A CA 002382723A CA 2382723 A CA2382723 A CA 2382723A CA 2382723 A1 CA2382723 A1 CA 2382723A1
- Authority
- CA
- Canada
- Prior art keywords
- waveguide
- laser according
- waveguides
- laser
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A semiconductor laser has an optical amplifier with a first waveguide (18) forming part of a first optical path between a reflector (20) and a reflective grating (25) and a second waveguide (19) optically coupled to the first waveguide (18) and a laser output (23) coupled to the second waveguide (19).
Description
SEMICONDUCTOR LASER
The invention relates to semiconductor lasers including external cavity lasers.
The invention is particularly applicable to narrow line width lasers for use in telecommunication systems. Such systems may comprise wavelength division multiplexing systems.
External cavity lasers are known in which the laser cavity is formed between two reflectors one of which is a partial reflector so as to allow transmission of the laser output. The output power is related to the intracavity power and the ratio of the reflection and transmission coefficients of the reflectors used in the cavity. The threshold current to commence laser operation as well as the output power and intracavity power are all related to the reflectivity of the reflectors used. Normally a low threshold current is incompatible with a high output power where the output is derived by transmission through one of the reflectors. Furthermore the intracavity power may need to be accurately controlled to ensure correct behaviour of the laser in distributed wavelength division multiplex systems. These may require the laser to operate on a single longitudinal mode to ensure narrow line width.
The object of the present invention is to provide an improved semiconductor laser.
The invention provides a semiconductor laser comprising a semiconductor optical amplifier having first and second semiconductor waveguides, a first waveguide forming at least part of a first optical path in the amplifier between reflectors and a second waveguide optically coupled to said first waveguide in the optical amplifier, and a laser output connected to a second optical path formed at least in part by said second waveguide.
The invention also provides a semiconductor laser comprising a semiconductor optical amplifier having first and second semiconductor waveguides, a first waveguide forming at least part of a first optical path between a reflector in the amplifier and a reflective grating, and a second waveguide optically coupled to said first waveguide in the optical amplifier, and a laser output connected to a second optical path formed at least in part by said second waveguide.
Preferably the reflective grating is arranged to provide substantially total reflection.
Preferably said reflector in the amplifier is provided by one end facet of said optical amplifier.
Preferably said first and second waveguides extend from the optical amplifier through an end face inclined to the normal to said end face.
Preferably both said first and second waveguides are parallel at said end of the optical amplifier.
Preferably both said waveguides are formed as part of an integrated semiconductor amplifier.
Said first and second waveguides in the optical amplifier may form a four port evanescent coupler.
Alternatively said first and second waveguides in the optical amplifier form an evanescent coupler in which a reflector in the amplifier is located where the two waveguides are closest.
Preferably said semiconductor amplifier is mounted in a recess in a supporting member on which said reflective grating is provided, said first waveguide forming part of an optical waveguide path extending to said reflective grating.
Preferably the supporting member is an integrated circuit optoelectronic device.
Preferably said supporting member includes further waveguides, one further waveguide connecting said first waveguide to said reflective grating and another further waveguide connecting said second waveguide to said laser output.
Preferably each of said waveguides comprises a semiconductor rib waveguide.
Preferably each of said optical paths includes a silicon rib waveguide.
Preferably the output of the laser includes a junction with an optical fibre.
Preferably electrical pumping circuit is connected to active semiconductor material in said optical amplifier.
Preferably means is provided to vary the optical gain in said second waveguide.
Preferably said means may vary the gain in said second waveguide independently of the gain of the first waveguide.
Some embodiments of the invention will now be described by way of example and with reference to the accompanying drawings in which:
Figure 1 shows a schematic view of one embodiment of the invention, Figure 2 shows a reflective grating for use in a rib waveguide in the device of Figure 1, Figure 3 shows a vertical section through one structure of use in the device of Figure 1, and Figure 4 shows an alternative arrangement for part of the device of Figure 1.
In this example a reflective semiconductor optical amplifier 11 is formed as an integrated semiconductor chip and located in a recess 12 in an integrated silicon support 13. The optical amplifier 11 is formed as a rectangular chip having two faces 15 and 16 which abut edges of the recess 12 in order to provide correct alignment of the amplifier 11 within the recess 12. The amplifier 11 has two rib waveguides 18 and 19 which extend across the amplifier and form an evanescent coupler within the amplifier. The end facet 20 of the chip 11 has a high reflective coating such as a gold coating. The opposite end face 21 has an antireflective coating so as to allow high level of transmission through the end face 21. The waveguides 18 and 19 are inclined to the normal at the face 21 and are in accurate alignment with corresponding aligned silicon waveguides 22 and 23 in the support 13. Waveguides 22 and 23 are each rib waveguides which extend parallel to each other in the region adjacent the face 21.
Waveguide 22 is connected to a reflective grating 25 of the type shown in Figure 2. This comprises a silicon rib 26 with a plurality of transverse grooves 27 formed in the rib so as to provide reflection of light. The grating 25 is arranged on the waveguide 22 so that light transmitted from the amplifier 11 passes along the waveguide 22 to the reflective grating 25 where there is substantially total reflection. The waveguide 22 terminates at the grating 25 so that there is no transmitted output through the grating 25. Light is reflected back into the optical amplifier 11 so that the laser cavity is formed between the highly reflective end 20 of the optical amplifier and the reflective grating 25. The coupler 29 formed in the optical amplifier 11 acts as a tap-off coupler in order to tap off output from the amplifier for use as the laser output. Light which is tapped off in this way passes along the rib waveguide 23 to a laser output 30 in which an optical fibre 31 is located in a V
groove support aligned with the end of the rib waveguide 23. A
further waveguide coupler 33 is located adjacent the rib waveguide 23 so as to provide a signal to a photodiode 34 in order to monitor the light output of the laser. Power to drive the laser is derived from an electrical pumping circuit 35 which is connected to electrodes adjacent active semiconductor light transmitting material in the amplifier 11 as will be described with reference to Figure 3.
In the example of Figure 1, the coupler 29 is a four port evanescent coupler such that the distance between the midpoint of the coupler 29 and the reflective end face 20 for each of the waveguides 18 and 19 is either exactly equal for both waveguides or if different they need to be an exact integer of the number of wavelengths in order to get constructive interference at the output.
An alternative to this is shown in Figure 4 which shows a modified optical amplifier 11 in which the waveguides 18 and 19 form an evanescent coupler in which the highly reflective end facet 20 is now located at the midpoint of the coupler where the two waveguides are closest. In other words, only half the coupler 29 of Figure 1 need be used if the midpoint of the coupler coincides with the high reflective end face 20.
One example of a semiconductor structure which may be used for the optical amplifier 11 is shown in Figure 3. This illustrates one of the rib waveguides 19 although both rib waveguides 18 and 19 may be similarly constructed on a single chip. In this case the rib 19 projects upwardly from an upper layer of semiconductor material 40 which may be a mixture of indium, galium, arsenic and phosphorous. These semiconductor materials may be active or passive depending on the concentrations used in any mixture of these semiconductor materials. The layer 40 may be passive. An active layer 41 formed from a mixture of the same semiconductor materials is located below layer 40. A passive substrate 42 is formed of the same semiconductor materials. Electrical terminals 43 and 44 are placed above the rib 19 and below the substrate 42.
These metal contacts are connected to the electrical pumping circuit 35. In the example shown in Figure 3 the optical mode for light transmission is shown by the broken line 45.
It will be appreciated that by putting the metal contacts separately over the waveguides 18 and 19 in the optical amplifier, the tapped off output signal through waveguide 19 can be separately controlled so as to provide a high gain in the optical output without changing the intracavity power. Similarly the intracavity power and the laser threshold can be determined by operation of the active material in the waveguide path formed by the rib 18 and has a degree of independence from the required output power.
The supporting structure 13 is formed by known integrated silicon techniques for optical waveguides in which the waveguides 22 and 23 are formed as known silicon rib waveguides.
The invention is not limited to the details of the foregoing example.
The laser may be a distributed feed back (DFB) laser.
Although the grating 25 of Figure 1 is highly reflective, it is not practical to achieve 1000 reflectivity with such a grating.
The photodetector 34 may therefore, in an alternative embodiment, be located adjacent the end of the grating 25 remote from the recess 12 so as to receive light which is transmitted through the grating and thereby avoid unnecessary waste of light energy.
The invention relates to semiconductor lasers including external cavity lasers.
The invention is particularly applicable to narrow line width lasers for use in telecommunication systems. Such systems may comprise wavelength division multiplexing systems.
External cavity lasers are known in which the laser cavity is formed between two reflectors one of which is a partial reflector so as to allow transmission of the laser output. The output power is related to the intracavity power and the ratio of the reflection and transmission coefficients of the reflectors used in the cavity. The threshold current to commence laser operation as well as the output power and intracavity power are all related to the reflectivity of the reflectors used. Normally a low threshold current is incompatible with a high output power where the output is derived by transmission through one of the reflectors. Furthermore the intracavity power may need to be accurately controlled to ensure correct behaviour of the laser in distributed wavelength division multiplex systems. These may require the laser to operate on a single longitudinal mode to ensure narrow line width.
The object of the present invention is to provide an improved semiconductor laser.
The invention provides a semiconductor laser comprising a semiconductor optical amplifier having first and second semiconductor waveguides, a first waveguide forming at least part of a first optical path in the amplifier between reflectors and a second waveguide optically coupled to said first waveguide in the optical amplifier, and a laser output connected to a second optical path formed at least in part by said second waveguide.
The invention also provides a semiconductor laser comprising a semiconductor optical amplifier having first and second semiconductor waveguides, a first waveguide forming at least part of a first optical path between a reflector in the amplifier and a reflective grating, and a second waveguide optically coupled to said first waveguide in the optical amplifier, and a laser output connected to a second optical path formed at least in part by said second waveguide.
Preferably the reflective grating is arranged to provide substantially total reflection.
Preferably said reflector in the amplifier is provided by one end facet of said optical amplifier.
Preferably said first and second waveguides extend from the optical amplifier through an end face inclined to the normal to said end face.
Preferably both said first and second waveguides are parallel at said end of the optical amplifier.
Preferably both said waveguides are formed as part of an integrated semiconductor amplifier.
Said first and second waveguides in the optical amplifier may form a four port evanescent coupler.
Alternatively said first and second waveguides in the optical amplifier form an evanescent coupler in which a reflector in the amplifier is located where the two waveguides are closest.
Preferably said semiconductor amplifier is mounted in a recess in a supporting member on which said reflective grating is provided, said first waveguide forming part of an optical waveguide path extending to said reflective grating.
Preferably the supporting member is an integrated circuit optoelectronic device.
Preferably said supporting member includes further waveguides, one further waveguide connecting said first waveguide to said reflective grating and another further waveguide connecting said second waveguide to said laser output.
Preferably each of said waveguides comprises a semiconductor rib waveguide.
Preferably each of said optical paths includes a silicon rib waveguide.
Preferably the output of the laser includes a junction with an optical fibre.
Preferably electrical pumping circuit is connected to active semiconductor material in said optical amplifier.
Preferably means is provided to vary the optical gain in said second waveguide.
Preferably said means may vary the gain in said second waveguide independently of the gain of the first waveguide.
Some embodiments of the invention will now be described by way of example and with reference to the accompanying drawings in which:
Figure 1 shows a schematic view of one embodiment of the invention, Figure 2 shows a reflective grating for use in a rib waveguide in the device of Figure 1, Figure 3 shows a vertical section through one structure of use in the device of Figure 1, and Figure 4 shows an alternative arrangement for part of the device of Figure 1.
In this example a reflective semiconductor optical amplifier 11 is formed as an integrated semiconductor chip and located in a recess 12 in an integrated silicon support 13. The optical amplifier 11 is formed as a rectangular chip having two faces 15 and 16 which abut edges of the recess 12 in order to provide correct alignment of the amplifier 11 within the recess 12. The amplifier 11 has two rib waveguides 18 and 19 which extend across the amplifier and form an evanescent coupler within the amplifier. The end facet 20 of the chip 11 has a high reflective coating such as a gold coating. The opposite end face 21 has an antireflective coating so as to allow high level of transmission through the end face 21. The waveguides 18 and 19 are inclined to the normal at the face 21 and are in accurate alignment with corresponding aligned silicon waveguides 22 and 23 in the support 13. Waveguides 22 and 23 are each rib waveguides which extend parallel to each other in the region adjacent the face 21.
Waveguide 22 is connected to a reflective grating 25 of the type shown in Figure 2. This comprises a silicon rib 26 with a plurality of transverse grooves 27 formed in the rib so as to provide reflection of light. The grating 25 is arranged on the waveguide 22 so that light transmitted from the amplifier 11 passes along the waveguide 22 to the reflective grating 25 where there is substantially total reflection. The waveguide 22 terminates at the grating 25 so that there is no transmitted output through the grating 25. Light is reflected back into the optical amplifier 11 so that the laser cavity is formed between the highly reflective end 20 of the optical amplifier and the reflective grating 25. The coupler 29 formed in the optical amplifier 11 acts as a tap-off coupler in order to tap off output from the amplifier for use as the laser output. Light which is tapped off in this way passes along the rib waveguide 23 to a laser output 30 in which an optical fibre 31 is located in a V
groove support aligned with the end of the rib waveguide 23. A
further waveguide coupler 33 is located adjacent the rib waveguide 23 so as to provide a signal to a photodiode 34 in order to monitor the light output of the laser. Power to drive the laser is derived from an electrical pumping circuit 35 which is connected to electrodes adjacent active semiconductor light transmitting material in the amplifier 11 as will be described with reference to Figure 3.
In the example of Figure 1, the coupler 29 is a four port evanescent coupler such that the distance between the midpoint of the coupler 29 and the reflective end face 20 for each of the waveguides 18 and 19 is either exactly equal for both waveguides or if different they need to be an exact integer of the number of wavelengths in order to get constructive interference at the output.
An alternative to this is shown in Figure 4 which shows a modified optical amplifier 11 in which the waveguides 18 and 19 form an evanescent coupler in which the highly reflective end facet 20 is now located at the midpoint of the coupler where the two waveguides are closest. In other words, only half the coupler 29 of Figure 1 need be used if the midpoint of the coupler coincides with the high reflective end face 20.
One example of a semiconductor structure which may be used for the optical amplifier 11 is shown in Figure 3. This illustrates one of the rib waveguides 19 although both rib waveguides 18 and 19 may be similarly constructed on a single chip. In this case the rib 19 projects upwardly from an upper layer of semiconductor material 40 which may be a mixture of indium, galium, arsenic and phosphorous. These semiconductor materials may be active or passive depending on the concentrations used in any mixture of these semiconductor materials. The layer 40 may be passive. An active layer 41 formed from a mixture of the same semiconductor materials is located below layer 40. A passive substrate 42 is formed of the same semiconductor materials. Electrical terminals 43 and 44 are placed above the rib 19 and below the substrate 42.
These metal contacts are connected to the electrical pumping circuit 35. In the example shown in Figure 3 the optical mode for light transmission is shown by the broken line 45.
It will be appreciated that by putting the metal contacts separately over the waveguides 18 and 19 in the optical amplifier, the tapped off output signal through waveguide 19 can be separately controlled so as to provide a high gain in the optical output without changing the intracavity power. Similarly the intracavity power and the laser threshold can be determined by operation of the active material in the waveguide path formed by the rib 18 and has a degree of independence from the required output power.
The supporting structure 13 is formed by known integrated silicon techniques for optical waveguides in which the waveguides 22 and 23 are formed as known silicon rib waveguides.
The invention is not limited to the details of the foregoing example.
The laser may be a distributed feed back (DFB) laser.
Although the grating 25 of Figure 1 is highly reflective, it is not practical to achieve 1000 reflectivity with such a grating.
The photodetector 34 may therefore, in an alternative embodiment, be located adjacent the end of the grating 25 remote from the recess 12 so as to receive light which is transmitted through the grating and thereby avoid unnecessary waste of light energy.
Claims (17)
1. A semiconductor laser comprising a semiconductor optical amplifier having first and second semiconductor waveguides, a first waveguide forming at least part of a first optical path between a reflector in the amplifier and a reflective grating, and a second waveguide optically coupled to said first waveguide in the optical amplifier, and a laser output connected to a second optical path formed at least in part by said second waveguide, wherein said first and second waveguides in the optical amplifier form an evanescent coupler in which a reflector in the amplifier is located where the two waveguides are closest.
2 A laser according to claim 1 in which the reflective grating is arranged to provide substantially total reflection.
3. A laser according to claim 1 or claim 2 in which said reflector in the amplifier is provided by one end facet of said optical amplifier.
4. A laser according to any one of the preceding claims in which said first and second waveguides extend from the optical amplifier through an end face inclined to the normal to said end face.
5. A laser according to claim 4 in which both said first and second waveguides are parallel at said end of the optical amplifier.
6 A laser according to any one of the preceding claims in which both said waveguides are formed as part of an integrated semiconductor amplifier.
7. A laser according to any one of the preceding claims in which said first and second waveguides in the optical amplifier form a four port evanescent coupler.
8. A laser according to any one of the preceding claims in which said semiconductor amplifier is mounted in a recess in a supporting member on which said reflective grating is provided, said first waveguide forming part of an optical waveguide path extending to said reflective grating.
9. A laser according to claim 8 in which the supporting member is an integrated circuit optoelectronic device.
10. A laser according to claim 10 or claim 11 in which said supporting member includes further waveguides, one further waveguide connecting said first waveguide to said reflective grating and another further waveguide connecting said second waveguide to said laser output.
11. A laser according to any one of the preceding claims in which each of said waveguides comprises a semiconductor rib waveguide.
12. A laser according to claim 11 in which each of said optical paths includes rib waveguides comprises a silicon rib waveguide.
13. A laser according to any one of the preceding claims in which the output of the laser includes a junction with an optical fibre.
14. A laser according to any one of the preceding claims in which an electrical pumping circuit is connected to active semiconductor material in said optical amplifier.
15. A laser according to any one of the preceding claims in which means is provided to vary the optical gain in said second waveguide.
16. A laser according to claim 15 in which said means may vary the gain in said second waveguide independently of the gain of the first waveguide.
17. A laser according to any one of the preceding claims in which the laser is an external cavity laser.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9920173A GB2353898A (en) | 1999-08-25 | 1999-08-25 | A semiconductor laser amplifier using waveguides |
| GB9920173.3 | 1999-08-25 | ||
| PCT/GB2000/003316 WO2001015287A2 (en) | 1999-08-25 | 2000-08-24 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2382723A1 true CA2382723A1 (en) | 2001-03-01 |
Family
ID=10859815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002382723A Abandoned CA2382723A1 (en) | 1999-08-25 | 2000-08-24 | Semiconductor laser |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU6854400A (en) |
| CA (1) | CA2382723A1 (en) |
| GB (1) | GB2353898A (en) |
| WO (1) | WO2001015287A2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0707304D0 (en) | 2007-04-16 | 2007-05-23 | Univ Southampton | Evanescent field optical waveguide devices |
| CN103457155B (en) * | 2013-07-26 | 2016-09-21 | 马亚男 | Hybrid integrated Compound Cavity tunable wave length generating laser |
| CN104104011A (en) * | 2014-08-08 | 2014-10-15 | 武汉光迅科技股份有限公司 | Broadband tunable laser |
| CN108258579B (en) * | 2016-12-29 | 2020-02-14 | 华为技术有限公司 | Surface-mounted laser device and light-emitting power monitoring method |
| CN108270147B (en) * | 2016-12-30 | 2019-08-20 | 华为技术有限公司 | A kind of laser aid and its out light method |
| CN112327270A (en) * | 2020-11-04 | 2021-02-05 | 国科光芯(海宁)科技股份有限公司 | On-chip integrated chaotic radar chip and preparation method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4277762A (en) * | 1978-01-13 | 1981-07-07 | Xerox Corporation | Mode control of heterojunction injection lasers and method of fabrication |
| GB2188187B (en) * | 1986-03-19 | 1989-11-15 | Stc Plc | Coupled waveguide injection laser |
| US4852960A (en) * | 1987-03-11 | 1989-08-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Narrow-linewidth resonant optical device, transmitter, system, and method |
| US5123070A (en) * | 1990-09-10 | 1992-06-16 | Tacan Corporation | Method of monolithic temperature-stabilization of a laser diode by evanescent coupling to a temperature stable grating |
| FR2728399B1 (en) * | 1994-12-20 | 1997-03-14 | Bouadma Nouredine | LASER COMPONENT WITH BRAGG REFLECTOR IN ORGANIC MATERIAL AND METHOD FOR THE PRODUCTION THEREOF |
| FR2762447B1 (en) * | 1997-04-21 | 2000-06-30 | France Telecom | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A CONSTANT PIT BRAGG ARRAY |
| GB2325334B (en) * | 1998-07-10 | 1999-04-14 | Bookham Technology Ltd | External cavity laser |
-
1999
- 1999-08-25 GB GB9920173A patent/GB2353898A/en not_active Withdrawn
-
2000
- 2000-08-24 CA CA002382723A patent/CA2382723A1/en not_active Abandoned
- 2000-08-24 AU AU68544/00A patent/AU6854400A/en not_active Abandoned
- 2000-08-24 WO PCT/GB2000/003316 patent/WO2001015287A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001015287A2 (en) | 2001-03-01 |
| GB2353898A (en) | 2001-03-07 |
| GB9920173D0 (en) | 1999-10-27 |
| WO2001015287A3 (en) | 2001-09-27 |
| AU6854400A (en) | 2001-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |