CA2211028A1 - Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell - Google Patents
Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cellInfo
- Publication number
- CA2211028A1 CA2211028A1 CA002211028A CA2211028A CA2211028A1 CA 2211028 A1 CA2211028 A1 CA 2211028A1 CA 002211028 A CA002211028 A CA 002211028A CA 2211028 A CA2211028 A CA 2211028A CA 2211028 A1 CA2211028 A1 CA 2211028A1
- Authority
- CA
- Canada
- Prior art keywords
- silicon
- ingot
- manufacturing
- molten metal
- metallic silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052710 silicon Inorganic materials 0.000 title abstract 6
- 239000010703 silicon Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 238000005520 cutting process Methods 0.000 abstract 2
- 238000007711 solidification Methods 0.000 abstract 2
- 230000008023 solidification Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000007664 blowing Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005266 casting Methods 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000007670 refining Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
A process and an apparatus which enables mass production of polycrystalline silicon and a substrate made therefrom at a low cost from metallic silicon or silicon oxide as a starting material in a flow production line involving a series of continuous steps. The polycrystalline silicon and the silicon substrate for solar cells are prepared from metallic silicon through step A of refining metallic silicon under reduced pressure and solidifying the metallic silicon to remove impurities from the molten metal, thereby preparing an ingot; step B of cutting and removing an impurity-enriched portion of the ingot; step C of remelting the residue and removing boron and carbon by oxidation from the molten metal under an oxidizing atmosphere, followed by blowing of a gaseous mixture of argon with hydrogen to conduct deoxidation; step D of casting the molten metal after the deoxidation into a mold to conduct unidirectional solidification, thereby preparing an ingot; and step E of cutting and removing an impurity-enriched portion of the ingot prepared by the unidirectional solidification.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1996/002965 WO1998016466A1 (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| CA002211028A CA2211028C (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell |
| EP96933633A EP0869102B1 (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| NO974454A NO974454L (en) | 1996-10-14 | 1997-09-26 | Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1996/002965 WO1998016466A1 (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| CA002211028A CA2211028C (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell |
| NO974454A NO974454L (en) | 1996-10-14 | 1997-09-26 | Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2211028A1 true CA2211028A1 (en) | 1998-04-14 |
| CA2211028C CA2211028C (en) | 2002-04-16 |
Family
ID=25679496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002211028A Expired - Fee Related CA2211028C (en) | 1996-10-14 | 1996-10-14 | Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2211028C (en) |
| NO (1) | NO974454L (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100444410C (en) * | 2006-05-08 | 2008-12-17 | 高文秀 | P-type solar cell grade polycrystalline silicon preparing process |
| WO2017062571A3 (en) * | 2015-10-09 | 2017-05-26 | Milwaukee Silicon, Llc | Devices and systems for purifying silicon |
-
1996
- 1996-10-14 CA CA002211028A patent/CA2211028C/en not_active Expired - Fee Related
-
1997
- 1997-09-26 NO NO974454A patent/NO974454L/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100444410C (en) * | 2006-05-08 | 2008-12-17 | 高文秀 | P-type solar cell grade polycrystalline silicon preparing process |
| WO2017062571A3 (en) * | 2015-10-09 | 2017-05-26 | Milwaukee Silicon, Llc | Devices and systems for purifying silicon |
| US9783426B2 (en) | 2015-10-09 | 2017-10-10 | Milwaukee Silicon Llc | Purified silicon, devices and systems for producing same |
| US9802827B2 (en) | 2015-10-09 | 2017-10-31 | Milwaukee Silicon, Llc | Purified silicon, devices and systems for producing same |
| US10093546B2 (en) | 2015-10-09 | 2018-10-09 | Milwaukee Silicon Llc | Purified silicon, devices and systems for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2211028C (en) | 2002-04-16 |
| NO974454D0 (en) | 1997-09-26 |
| NO974454L (en) | 1998-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20131015 |