CA1088215A - Fabrication of power field effect transistors and the resulting structures - Google Patents
Fabrication of power field effect transistors and the resulting structuresInfo
- Publication number
- CA1088215A CA1088215A CA287,343A CA287343A CA1088215A CA 1088215 A CA1088215 A CA 1088215A CA 287343 A CA287343 A CA 287343A CA 1088215 A CA1088215 A CA 1088215A
- Authority
- CA
- Canada
- Prior art keywords
- regions
- substrate
- conductivity type
- micrometers
- diffusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000005669 field effect Effects 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000009792 diffusion process Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000012212 insulator Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000009740 moulding (composite fabrication) Methods 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/750,053 US4055884A (en) | 1976-12-13 | 1976-12-13 | Fabrication of power field effect transistors and the resulting structures |
| US750,053 | 1976-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1088215A true CA1088215A (en) | 1980-10-21 |
Family
ID=25016304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA287,343A Expired CA1088215A (en) | 1976-12-13 | 1977-09-23 | Fabrication of power field effect transistors and the resulting structures |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US4055884A (de) |
| JP (1) | JPS5374388A (de) |
| CA (1) | CA1088215A (de) |
| DE (1) | DE2754229A1 (de) |
| FR (1) | FR2373881A1 (de) |
| GB (1) | GB1582061A (de) |
| IT (1) | IT1115542B (de) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54149469A (en) * | 1978-05-16 | 1979-11-22 | Toshiba Corp | Semiconductor device |
| DE2835089A1 (de) * | 1978-08-10 | 1980-03-20 | Siemens Ag | Thyristor |
| US4206469A (en) * | 1978-09-15 | 1980-06-03 | Westinghouse Electric Corp. | Power metal-oxide-semiconductor-field-effect-transistor |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| DK157272C (da) * | 1978-10-13 | 1990-04-30 | Int Rectifier Corp | Mosfet med hoej effekt |
| US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
| FR2460542A1 (fr) * | 1979-06-29 | 1981-01-23 | Thomson Csf | Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor |
| US4366495A (en) * | 1979-08-06 | 1982-12-28 | Rca Corporation | Vertical MOSFET with reduced turn-on resistance |
| CA1131797A (en) * | 1979-08-20 | 1982-09-14 | Jagir S. Multani | Fabrication of a semiconductor device in a simulated epitaxial layer |
| US4374455A (en) * | 1979-10-30 | 1983-02-22 | Rca Corporation | Method for manufacturing a vertical, grooved MOSFET |
| JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| DE3012185A1 (de) * | 1980-03-28 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor |
| FR2480036A1 (fr) * | 1980-04-04 | 1981-10-09 | Thomson Csf | Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire |
| US4345265A (en) * | 1980-04-14 | 1982-08-17 | Supertex, Inc. | MOS Power transistor with improved high-voltage capability |
| US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
| US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
| DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
| IT1154298B (it) * | 1981-02-23 | 1987-01-21 | Motorola Inc | Perfezionemento nei transistori di potenza mos |
| US4360963A (en) * | 1981-07-31 | 1982-11-30 | Rca Corporation | Method of making CCD imagers with reduced defects |
| US4677452A (en) * | 1981-10-26 | 1987-06-30 | Intersil, Inc. | Power field-effect transistor structures |
| GB2108758B (en) * | 1981-10-26 | 1985-08-21 | Intersil Inc | Power field-effect transistor structures |
| US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
| DE3224642A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit injektorzone |
| US4500898A (en) * | 1982-07-06 | 1985-02-19 | General Electric Company | Semiconductor devices utilizing eutectic masks |
| DE3322669C2 (de) * | 1982-07-08 | 1986-04-24 | General Electric Co., Schenectady, N.Y. | Verfahren zum Herstellen einer Halbleitervorrichtung mit isolierten Gateelektroden |
| US4532534A (en) * | 1982-09-07 | 1985-07-30 | Rca Corporation | MOSFET with perimeter channel |
| US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
| WO1984003997A1 (en) * | 1983-04-04 | 1984-10-11 | Motorola Inc | Self-aligned ldmos and method |
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
| NL8400612A (nl) * | 1984-02-28 | 1985-09-16 | Cordis Europ | Chemisch gevoelige fet-component. |
| US4783694A (en) * | 1984-03-16 | 1988-11-08 | Motorola Inc. | Integrated bipolar-MOS semiconductor device with common collector and drain |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| US4646117A (en) * | 1984-12-05 | 1987-02-24 | General Electric Company | Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions |
| GB2186117B (en) * | 1986-01-30 | 1989-11-01 | Sgs Microelettronica Spa | Monolithically integrated semiconductor device containing bipolar junction,cmosand dmos transistors and low leakage diodes and a method for its fabrication |
| US4816882A (en) * | 1986-03-10 | 1989-03-28 | Siliconix Incorporated | Power MOS transistor with equipotential ring |
| US4997781A (en) * | 1987-11-24 | 1991-03-05 | Texas Instruments Incorporated | Method of making planarized EPROM array |
| US4898835A (en) * | 1988-10-12 | 1990-02-06 | Sgs-Thomson Microelectronics, Inc. | Single mask totally self-aligned power MOSFET cell fabrication process |
| US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| EP0460251B1 (de) * | 1990-06-05 | 1998-11-18 | Siemens Aktiengesellschaft | Herstellverfahren für einen Leistungs-MISFET |
| DE4137341C1 (de) * | 1991-11-13 | 1993-04-29 | Siemens Ag, 8000 Muenchen, De | |
| US5243211A (en) * | 1991-11-25 | 1993-09-07 | Harris Corporation | Power fet with shielded channels |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| US5323036A (en) * | 1992-01-21 | 1994-06-21 | Harris Corporation | Power FET with gate segments covering drain regions disposed in a hexagonal pattern |
| JP2503900B2 (ja) * | 1993-07-30 | 1996-06-05 | 日本電気株式会社 | 半導体装置及びそれを用いたモ―タドライバ回路 |
| EP0660402B1 (de) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Leistungs-Halbleiterbauelement |
| EP0660396B1 (de) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| EP0661753A1 (de) * | 1994-01-04 | 1995-07-05 | Motorola, Inc. | Halbleiterstruktur mit feldsbegrenzender Zone und Verfahren zur Herstellung |
| EP0689238B1 (de) * | 1994-06-23 | 2002-02-20 | STMicroelectronics S.r.l. | Verfahren zur Herstellung eines Leistungsbauteils in MOS-Technik |
| US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
| US5416032A (en) * | 1994-06-24 | 1995-05-16 | Sgs-Thomson Microelectronics, Inc. | Method of making a high conductivity p-plus region for self-aligned, shallow diffused, bipolar transistors |
| EP0697728B1 (de) * | 1994-08-02 | 1999-04-21 | STMicroelectronics S.r.l. | Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau |
| US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
| US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| EP0768714B1 (de) * | 1995-10-09 | 2003-09-17 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Herstellungsverfahren für Leistungsanordnung mit Schutzring |
| DE69534919T2 (de) * | 1995-10-30 | 2007-01-25 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe |
| DE69533134T2 (de) * | 1995-10-30 | 2005-07-07 | Stmicroelectronics S.R.L., Agrate Brianza | Leistungsbauteil hoher Dichte in MOS-Technologie |
| US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
| EP0782201B1 (de) * | 1995-12-28 | 2000-08-30 | STMicroelectronics S.r.l. | MOS-Technologie-Leistungsanordnung in integrierter Struktur |
| EP0791965A3 (de) * | 1996-02-26 | 1998-09-16 | SILICONIX Incorporated | Vertikal-Transistor mit vier Klemmen |
| DE69839439D1 (de) | 1998-05-26 | 2008-06-19 | St Microelectronics Srl | MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte |
| DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
| KR100297705B1 (ko) | 1999-03-29 | 2001-10-29 | 김덕중 | 낮은 온저항과 높은 항복전압을 갖는 전력용 반도체소자 |
| US6825514B2 (en) * | 2001-11-09 | 2004-11-30 | Infineon Technologies Ag | High-voltage semiconductor component |
| US6819089B2 (en) * | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
| US7875936B2 (en) * | 2004-11-19 | 2011-01-25 | Stmicroelectronics, S.R.L. | Power MOS electronic device and corresponding realizing method |
| ITMI20042243A1 (it) * | 2004-11-19 | 2005-02-19 | St Microelectronics Srl | Processo per la realizzazione di un dispositivo mos di potenza ad alta densita' di integrazione |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3199002A (en) * | 1961-04-17 | 1965-08-03 | Fairchild Camera Instr Co | Solid-state circuit with crossing leads and method for making the same |
| DE1614751A1 (de) * | 1967-01-07 | 1970-12-03 | Telefunken Patent | Halbleiteranordnung |
| GB1316555A (de) * | 1969-08-12 | 1973-05-09 | ||
| US3756876A (en) * | 1970-10-27 | 1973-09-04 | Cogar Corp | Fabrication process for field effect and bipolar transistor devices |
| US3845495A (en) * | 1971-09-23 | 1974-10-29 | Signetics Corp | High voltage, high frequency double diffused metal oxide semiconductor device |
| US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
| JPS5115016B2 (de) * | 1972-06-05 | 1976-05-13 | ||
| US3926694A (en) * | 1972-07-24 | 1975-12-16 | Signetics Corp | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
| US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
| JPS6027191B2 (ja) * | 1975-05-15 | 1985-06-27 | ソニー株式会社 | 絶縁ゲ−ト形電界効果トランジスタ |
| JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
| US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
-
1976
- 1976-12-13 US US05/750,053 patent/US4055884A/en not_active Expired - Lifetime
-
1977
- 1977-08-08 US US05/822,588 patent/US4145700A/en not_active Expired - Lifetime
- 1977-09-23 CA CA287,343A patent/CA1088215A/en not_active Expired
- 1977-10-14 FR FR7731858A patent/FR2373881A1/fr active Granted
- 1977-11-16 GB GB47693/77A patent/GB1582061A/en not_active Expired
- 1977-11-22 IT IT7729877A patent/IT1115542B/it active
- 1977-11-25 JP JP14082977A patent/JPS5374388A/ja active Pending
- 1977-12-06 DE DE19772754229 patent/DE2754229A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5374388A (en) | 1978-07-01 |
| FR2373881B1 (de) | 1980-08-08 |
| GB1582061A (en) | 1980-12-31 |
| US4055884A (en) | 1977-11-01 |
| US4145700A (en) | 1979-03-20 |
| DE2754229A1 (de) | 1978-06-15 |
| FR2373881A1 (fr) | 1978-07-07 |
| IT1115542B (it) | 1986-02-03 |
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| Date | Code | Title | Description |
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| MKEX | Expiry |