CA1060587A - Electrical circuit logic elements - Google Patents

Electrical circuit logic elements

Info

Publication number: CA1060587A
Authority: CA; Canada
Prior art keywords: schottky; terminal; schottky diode; diodes; diode
Prior art date: 1975-06-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA253,926A

Other languages

English (en)

French (fr)

Inventor

Ronald Rathbone

Peter Rydval

Ulrich Schwabe

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee

Siemens AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-06-03

Filing date

1976-06-02

Publication date

1979-08-14

1976-06-02 Application filed by Siemens AG filed Critical Siemens AG

1979-08-14 Application granted granted Critical

1979-08-14 Publication of CA1060587A publication Critical patent/CA1060587A/en

Status Expired legal-status Critical Current

Links

238000005468 ion implantation Methods 0.000 claims abstract description 6
239000004065 semiconductor Substances 0.000 claims description 14
230000000903 blocking effect Effects 0.000 claims description 6
239000013078 crystal Substances 0.000 claims description 6
229910052751 metal Inorganic materials 0.000 claims description 4
239000002184 metal Substances 0.000 claims description 4
238000001465 metallisation Methods 0.000 abstract description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1
238000004519 manufacturing process Methods 0.000 description 4
238000012856 packing Methods 0.000 description 4
230000003321 amplification Effects 0.000 description 3
238000010276 construction Methods 0.000 description 3
238000003199 nucleic acid amplification method Methods 0.000 description 3
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
238000000576 coating method Methods 0.000 description 2
239000010936 titanium Substances 0.000 description 2
229910052719 titanium Inorganic materials 0.000 description 2
230000000295 complement effect Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000001771 impaired effect Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
238000000034 method Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
230000002265 prevention Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/12—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using diode rectifiers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Computing Systems (AREA)
General Engineering & Computer Science (AREA)
Mathematical Physics (AREA)
Bipolar Integrated Circuits (AREA)
Logic Circuits (AREA)
Electrodes Of Semiconductors (AREA)
Bipolar Transistors (AREA)

CA253,926A 1975-06-03 1976-06-02 Electrical circuit logic elements Expired CA1060587A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19752524579 DE2524579C3 (de)	1975-06-03	1975-06-03	Halbleiter-Logikglied

Publications (1)

Publication Number	Publication Date
CA1060587A true CA1060587A (en)	1979-08-14

Family

ID=5948131

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA253,926A Expired CA1060587A (en)	1975-06-03	1976-06-02	Electrical circuit logic elements

Country Status (7)

Country	Link
AT (1)	AT336930B (de)
CA (1)	CA1060587A (de)
CH (1)	CH610160A5 (de)
DE (1)	DE2524579C3 (de)
FR (1)	FR2313820A1 (de)
GB (1)	GB1551276A (de)
IT (1)	IT1079512B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4156246A (en) *	1977-05-25	1979-05-22	Bell Telephone Laboratories, Incorporated	Combined ohmic and Schottky output transistors for logic circuit
US4347585A (en) *	1980-06-09	1982-08-31	International Business Machines Corporation	Reproduce only storage matrix
US4415817A (en) *	1981-10-08	1983-11-15	Signetics Corporation	Bipolar logic gate including circuitry to prevent turn-off and deep saturation of pull-down transistor
NL8300843A (nl) *	1983-03-09	1984-10-01	Philips Nv	Geintegreerde logische schakeling.

1975
- 1975-06-03 DE DE19752524579 patent/DE2524579C3/de not_active Expired
- 1975-08-08 AT AT618375A patent/AT336930B/de not_active IP Right Cessation
1976
- 1976-04-12 CH CH461076A patent/CH610160A5/xx not_active IP Right Cessation
- 1976-05-11 GB GB1930676A patent/GB1551276A/en not_active Expired
- 1976-05-26 IT IT2366676A patent/IT1079512B/it active
- 1976-05-28 FR FR7616222A patent/FR2313820A1/fr active Granted
- 1976-06-02 CA CA253,926A patent/CA1060587A/en not_active Expired

Also Published As

Publication number	Publication date
IT1079512B (it)	1985-05-13
DE2524579A1 (de)	1976-12-23
CH610160A5 (en)	1979-03-30
GB1551276A (en)	1979-08-30
FR2313820A1 (fr)	1976-12-31
FR2313820B1 (de)	1982-09-03
AT336930B (de)	1977-06-10
DE2524579B2 (de)	1980-03-27
ATA618375A (de)	1976-09-15
DE2524579C3 (de)	1980-11-27

Publication	Publication Date	Title
US4994886A (en)	1991-02-19	Composite MOS transistor and application to a free-wheel diode
US4101922A (en)	1978-07-18	Field effect transistor with a short channel length
JPS60103660A (ja)	1985-06-07	半導体基板の基板電圧発生装置
US3476989A (en)	1969-11-04	Controlled rectifier semiconductor device
GB2073490A (en)	1981-10-14	Complementary field-effect transistor integrated circuit device
JPS62115765A (ja)	1987-05-27	半導体装置
JPS59215767A (ja)	1984-12-05	オン抵抗の低い絶縁ゲ−ト半導体デバイス
CA1111514A (en)	1981-10-27	Multidrain metal-oxide-semiconductor field-effect device
CA1060587A (en)	1979-08-14	Electrical circuit logic elements
US4471372A (en)	1984-09-11	FET Controlled Triac
EP0065346A2 (de)	1982-11-24	Halbleiter-Schaltungsanordnung
US3638081A (en)	1972-01-25	Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element
US4602170A (en)	1986-07-22	Resistive gate field effect transistor logic family
US4063273A (en)	1977-12-13	Fundamental logic circuit
KR100196734B1 (ko)	1999-06-15	큰 기판 접촉 영역을 갖는 반도체 장치
US4641163A (en)	1987-02-03	MIS-field effect transistor with charge carrier injection
US4175240A (en)	1979-11-20	Integrated logic circuit with a current source made as a field-effect transistor
US4163241A (en)	1979-07-31	Multiple emitter and normal gate semiconductor switch
US4680605A (en)	1987-07-14	High voltage depletion mode transistor with serpentine current path
US4952998A (en)	1990-08-28	Integrated circuit with complementary MOS transistors
JPH0291975A (ja)	1990-03-30	半導体装置
JP2780289B2 (ja)	1998-07-30	半導体装置
US4691221A (en)	1987-09-01	Monolithically integrated bipolar Darlington circuit
JPH01251755A (ja)	1989-10-06	サイリスタ
JPH01227478A (ja)	1989-09-11	半導体装置