BRPI0915771A2 - processo e instalação para depositante películas simultaneamente sobre ambos os lados de um substrato - Google Patents
processo e instalação para depositante películas simultaneamente sobre ambos os lados de um substratoInfo
- Publication number
- BRPI0915771A2 BRPI0915771A2 BRPI0915771A BRPI0915771A BRPI0915771A2 BR PI0915771 A2 BRPI0915771 A2 BR PI0915771A2 BR PI0915771 A BRPI0915771 A BR PI0915771A BR PI0915771 A BRPI0915771 A BR PI0915771A BR PI0915771 A2 BRPI0915771 A2 BR PI0915771A2
- Authority
- BR
- Brazil
- Prior art keywords
- voltage
- substrate
- electrodes
- reaction chamber
- inductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/365—Coating different sides of a glass substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08160508A EP2145979A1 (fr) | 2008-07-16 | 2008-07-16 | Procédé et installation pour le dépôt de couches sur les deux faces d'un substrat de façon simultanée |
PCT/EP2009/059157 WO2010007134A1 (en) | 2008-07-16 | 2009-07-16 | Process and installation for despositing films simultaneously onto both sides of a substrate. |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0915771A2 true BRPI0915771A2 (pt) | 2015-11-03 |
Family
ID=40243978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0915771A BRPI0915771A2 (pt) | 2008-07-16 | 2009-07-16 | processo e instalação para depositante películas simultaneamente sobre ambos os lados de um substrato |
Country Status (10)
Country | Link |
---|---|
US (1) | US9005718B2 (pt) |
EP (2) | EP2145979A1 (pt) |
JP (1) | JP5274659B2 (pt) |
CN (1) | CN102084030B (pt) |
AT (1) | ATE547544T1 (pt) |
BR (1) | BRPI0915771A2 (pt) |
EA (1) | EA019070B1 (pt) |
PL (1) | PL2300633T3 (pt) |
SI (1) | SI2300633T1 (pt) |
WO (1) | WO2010007134A1 (pt) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2145978A1 (fr) | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Procédé et installation pour le dépôt de couches sur un substrat |
EP2145701A1 (fr) * | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Procédé et installation pour la préparation de surface par décharge à barrière diélectrique |
EA027687B1 (ru) * | 2012-12-21 | 2017-08-31 | Асахи Гласс Компани Лимитед | Способ и устройство зажигания для пар электродов диэлектрического барьерного разряда (дбр) |
TWI727967B (zh) | 2015-08-21 | 2021-05-21 | 美商康寧公司 | 處理玻璃的方法及設備 |
US11426091B2 (en) * | 2017-09-06 | 2022-08-30 | Apple Inc. | Film coatings as electrically conductive pathways |
CN110129771B (zh) * | 2019-04-16 | 2021-04-20 | 中国科学院电工研究所 | 一种薄膜沉积镀膜***及对薄膜进行沉积镀膜的方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4790921A (en) * | 1984-10-12 | 1988-12-13 | Hewlett-Packard Company | Planetary substrate carrier method and apparatus |
JPS61204374A (ja) * | 1985-03-08 | 1986-09-10 | Hitachi Maxell Ltd | 蒸着方法ならびに蒸着装置 |
US5234561A (en) * | 1988-08-25 | 1993-08-10 | Hauzer Industries Bv | Physical vapor deposition dual coating process |
EP0502385B1 (de) * | 1991-03-05 | 1995-06-21 | Balzers Aktiengesellschaft | Verfahren zur Herstellung einer doppelseitigen Beschichtung von optischen Werkstücken |
FR2675139B1 (fr) * | 1991-04-09 | 1993-11-26 | Saint Gobain Vitrage Internal | Depot de couches pyrolysees a performances ameliorees et vitrage revetu d'une telle couche. |
US5776553A (en) * | 1996-02-23 | 1998-07-07 | Saint Gobain/Norton Industrial Ceramics Corp. | Method for depositing diamond films by dielectric barrier discharge |
US5789040A (en) * | 1997-05-21 | 1998-08-04 | Optical Coating Laboratory, Inc. | Methods and apparatus for simultaneous multi-sided coating of optical thin film designs using dual-frequency plasma-enhanced chemical vapor deposition |
US6395128B2 (en) * | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
US6456483B1 (en) * | 1999-04-14 | 2002-09-24 | Becromal S.P.A. | Electrodes for electrolytic capacitors and production process thereof |
TW200510790A (en) * | 1999-04-15 | 2005-03-16 | Konishiroku Photo Ind | Manufacturing method of protective film for polarizing plate |
US7760023B2 (en) * | 2000-09-12 | 2010-07-20 | Black Sand Technologies, Inc. | Method and apparatus for stabilizing RF power amplifiers |
JP2003073836A (ja) * | 2001-08-28 | 2003-03-12 | Canon Inc | 真空処理方法及び真空処理装置 |
GB0217553D0 (en) | 2002-07-30 | 2002-09-11 | Sheel David W | Titania coatings by CVD at atmospheric pressure |
US7615132B2 (en) * | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
JP4558365B2 (ja) * | 2004-03-26 | 2010-10-06 | 株式会社神戸製鋼所 | プラズマ処理装置及びプラズマ処理方法 |
GB0410749D0 (en) * | 2004-05-14 | 2004-06-16 | Dow Corning Ireland Ltd | Coating apparatus |
MXPA06013380A (es) | 2004-05-20 | 2007-01-23 | Dow Global Technologies Inc | Deposito mejorado de plasma de vapor quimico de oxido de metal. |
JP2006032303A (ja) * | 2004-07-22 | 2006-02-02 | Sharp Corp | 高周波プラズマ処理装置および処理方法 |
JP4747665B2 (ja) * | 2005-05-11 | 2011-08-17 | 大日本印刷株式会社 | 成膜装置及び成膜方法 |
JP2009525381A (ja) * | 2006-02-02 | 2009-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | プラズマによる表面処理方法及び表面処理装置 |
JP5254533B2 (ja) * | 2006-03-31 | 2013-08-07 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
US20080246101A1 (en) * | 2007-04-05 | 2008-10-09 | Applied Materials Inc. | Method of poly-silicon grain structure formation |
EP2145701A1 (fr) * | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Procédé et installation pour la préparation de surface par décharge à barrière diélectrique |
US7902047B2 (en) * | 2008-07-18 | 2011-03-08 | The United States Of America As Represented By The United States Department Of Energy | Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers |
-
2008
- 2008-07-16 EP EP08160508A patent/EP2145979A1/fr not_active Ceased
-
2009
- 2009-07-16 WO PCT/EP2009/059157 patent/WO2010007134A1/en active Application Filing
- 2009-07-16 JP JP2011517933A patent/JP5274659B2/ja not_active Expired - Fee Related
- 2009-07-16 SI SI200930246T patent/SI2300633T1/sl unknown
- 2009-07-16 BR BRPI0915771A patent/BRPI0915771A2/pt not_active Application Discontinuation
- 2009-07-16 AT AT09797508T patent/ATE547544T1/de active
- 2009-07-16 EA EA201100219A patent/EA019070B1/ru not_active IP Right Cessation
- 2009-07-16 CN CN2009801260925A patent/CN102084030B/zh not_active Expired - Fee Related
- 2009-07-16 EP EP09797508A patent/EP2300633B1/en not_active Not-in-force
- 2009-07-16 US US13/054,090 patent/US9005718B2/en not_active Expired - Fee Related
- 2009-07-16 PL PL09797508T patent/PL2300633T3/pl unknown
Also Published As
Publication number | Publication date |
---|---|
EP2300633A1 (en) | 2011-03-30 |
PL2300633T3 (pl) | 2012-07-31 |
JP5274659B2 (ja) | 2013-08-28 |
EP2300633B1 (en) | 2012-02-29 |
SI2300633T1 (sl) | 2012-06-29 |
EP2145979A1 (fr) | 2010-01-20 |
CN102084030A (zh) | 2011-06-01 |
US9005718B2 (en) | 2015-04-14 |
US20110200763A1 (en) | 2011-08-18 |
EA019070B1 (ru) | 2013-12-30 |
JP2011528067A (ja) | 2011-11-10 |
EA201100219A1 (ru) | 2011-08-30 |
ATE547544T1 (de) | 2012-03-15 |
WO2010007134A1 (en) | 2010-01-21 |
CN102084030B (zh) | 2013-07-24 |
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Legal Events
Date | Code | Title | Description |
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B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06T | Formal requirements before examination [chapter 6.20 patent gazette] |
Free format text: O DEPOSITANTE DEVE RESPONDER A EXIGENCIA FORMULADA NESTE PARECER POR MEIO DO SERVICO DE CODIGO 206 EM ATE 60 (SESSENTA) DIAS, A PARTIR DA DATA DE PUBLICACAO NA RPI, SOB PENA DO ARQUIVAMENTO DO PEDIDO, DE ACORDO COM O ART. 34 DA LPI.PUBLIQUE-SE A EXIGENCIA (6.20). |
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B11E | Dismissal acc. art. 34 of ipl - requirements for examination incomplete |