BR112021020936A2 - Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices - Google Patents
Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devicesInfo
- Publication number
- BR112021020936A2 BR112021020936A2 BR112021020936A BR112021020936A BR112021020936A2 BR 112021020936 A2 BR112021020936 A2 BR 112021020936A2 BR 112021020936 A BR112021020936 A BR 112021020936A BR 112021020936 A BR112021020936 A BR 112021020936A BR 112021020936 A2 BR112021020936 A2 BR 112021020936A2
- Authority
- BR
- Brazil
- Prior art keywords
- quantum computing
- computing devices
- flip chip
- fabrication methods
- frequency tuning
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000002096 quantum dot Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
Abstract
estruturas de sintonia de frequência qubit e métodos de fabricação para dispositivos de computação quântica flip chip. um dispositivo de computação quântica inclui um primeiro chip com um primeiro substrato e um ou mais qubits descartados no primeiro substrato. cada um ou mais qubits tem uma frequência de ressonância associada. o dispositivo de computação quântica inclui ainda um segundo chip com um segundo substrato e pelo menos uma superfície condutora descartada no segundo substrato oposto ao um ou mais qubits. a pelo menos uma superfície condutora tem pelo menos uma dimensão configurada para ajustar a frequência de ressonância associada a pelo menos um ou mais qubits a um determinado valor de ajuste de frequência.qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices. a quantum computing device includes a first chip with a first substrate and one or more qubits discarded on the first substrate. each one or more qubits has an associated resonant frequency. the quantum computing device further includes a second chip with a second substrate and at least one discarded conductive surface on the second substrate opposite the one or more qubits. the at least one conductive surface has at least one dimension configured to adjust the resonant frequency associated with the at least one or more qubits to a certain frequency adjustment value.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/389,033 US11195982B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
US16/389,001 US10903412B2 (en) | 2019-04-19 | 2019-04-19 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
PCT/EP2020/060612 WO2020212437A1 (en) | 2019-04-19 | 2020-04-15 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112021020936A2 true BR112021020936A2 (en) | 2022-01-25 |
Family
ID=70289808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112021020936A BR112021020936A2 (en) | 2019-04-19 | 2020-04-15 | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP3956825A1 (en) |
JP (1) | JP2022528739A (en) |
KR (1) | KR20210143798A (en) |
CN (1) | CN113711245A (en) |
AU (1) | AU2020259830B2 (en) |
BR (1) | BR112021020936A2 (en) |
CA (1) | CA3137214A1 (en) |
IL (1) | IL286613B1 (en) |
MX (1) | MX2021012618A (en) |
SG (1) | SG11202109829PA (en) |
WO (1) | WO2020212437A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013180780A2 (en) | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
EP3577700B1 (en) | 2017-02-01 | 2022-03-30 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
WO2022178130A1 (en) * | 2021-02-19 | 2022-08-25 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits with improved coherence |
CN115598490B (en) * | 2021-06-28 | 2024-04-05 | 本源量子计算科技(合肥)股份有限公司 | Quantum chip testing method and device, quantum measurement and control system and quantum computer |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106575667B (en) * | 2014-07-02 | 2020-07-31 | 哥本哈根大学 | Semiconductor josephson junctions and related transmon qubits |
US9971970B1 (en) * | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
US10170681B1 (en) * | 2017-11-28 | 2019-01-01 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
US10686007B2 (en) * | 2018-06-20 | 2020-06-16 | Intel Corporation | Quantum circuit assemblies with at least partially buried transmission lines and capacitors |
-
2020
- 2020-04-15 BR BR112021020936A patent/BR112021020936A2/en unknown
- 2020-04-15 CN CN202080028974.4A patent/CN113711245A/en active Pending
- 2020-04-15 SG SG11202109829P patent/SG11202109829PA/en unknown
- 2020-04-15 WO PCT/EP2020/060612 patent/WO2020212437A1/en active Application Filing
- 2020-04-15 KR KR1020217032410A patent/KR20210143798A/en active Search and Examination
- 2020-04-15 AU AU2020259830A patent/AU2020259830B2/en active Active
- 2020-04-15 JP JP2021560186A patent/JP2022528739A/en active Pending
- 2020-04-15 MX MX2021012618A patent/MX2021012618A/en unknown
- 2020-04-15 IL IL286613A patent/IL286613B1/en unknown
- 2020-04-15 CA CA3137214A patent/CA3137214A1/en active Pending
- 2020-04-15 EP EP20719425.9A patent/EP3956825A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2020212437A1 (en) | 2020-10-22 |
MX2021012618A (en) | 2021-11-12 |
KR20210143798A (en) | 2021-11-29 |
JP2022528739A (en) | 2022-06-15 |
SG11202109829PA (en) | 2021-10-28 |
CA3137214A1 (en) | 2020-10-22 |
AU2020259830B2 (en) | 2023-08-10 |
IL286613A (en) | 2021-10-31 |
IL286613B1 (en) | 2024-02-01 |
AU2020259830A1 (en) | 2021-09-30 |
EP3956825A1 (en) | 2022-02-23 |
CN113711245A (en) | 2021-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR112021020936A2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
WO2018217698A3 (en) | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same | |
GB2551082A (en) | On-chip semiconductor device having enhanced variability | |
BR112015021706A8 (en) | vector maximizing sieve panel assembly | |
BR112021019759A2 (en) | Integrated gate voltage tunable electron system with superconducting resonator for quantum computing device | |
EP2846358A3 (en) | Semiconductor device and manufacturing method thereof | |
EP2930750A3 (en) | Antifuse otp memory cell with performance improvement, and manufacturing method and operating method of memory | |
BR112019000104A2 (en) | battery cover and electronic device | |
BR112019006661A2 (en) | device for storing elements and installation | |
JP2015195365A5 (en) | ||
GB2526463A (en) | Leakage reduction structures for nanowire transistors | |
Augustine Fletcher et al. | Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer | |
US20090057781A1 (en) | Mugfet with optimized fill structures | |
SG11202000144YA (en) | Semiconductor device | |
BR112015009307A2 (en) | ELECTRONIC DEVICE COMPRISING A SUBSTRATE, AND PROCESS FOR LENGTHENING AT LEAST ONE SEMICONDUCTOR NANOWIRE | |
GB2574952A (en) | Fabrication of vertical field effect transistor device with modified vertical fin geometry | |
BR112015023516A2 (en) | large grain structure thin film photovoltaic device and forming methods | |
BR112021020379A2 (en) | Transmon qubits with trench capacitor structures | |
BR112019008514A2 (en) | semiconductor device having voltage inducing elements at the fin end | |
BR112019025570A2 (en) | CARDBOARD, CARDBOARD CONTAINER, AND METHOD FOR USING A CARDBOARD ITEM | |
MY174216A (en) | Electronic control unit | |
Hahn et al. | Characterization of GaN-based p-channel device structures at elevated temperatures | |
EP2760051A3 (en) | High Electron Mobility Transistor (HEMT) | |
Vatalaro et al. | Assessment of paper-based MoS2 FET for physically unclonable functions | |
BR112023006372A2 (en) | TUNNABLE CIRCUIT INCLUDING INTEGRATED FILTER CIRCUIT COUPLED WITH VARIABLE CAPACITANCE, AND RELATED INTEGRATED CIRCUIT (IC) PACKAGES AND MANUFACTURING METHODS |