BR112015008211A2 - circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio - Google Patents
circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meioInfo
- Publication number
- BR112015008211A2 BR112015008211A2 BR112015008211A BR112015008211A BR112015008211A2 BR 112015008211 A2 BR112015008211 A2 BR 112015008211A2 BR 112015008211 A BR112015008211 A BR 112015008211A BR 112015008211 A BR112015008211 A BR 112015008211A BR 112015008211 A2 BR112015008211 A2 BR 112015008211A2
- Authority
- BR
- Brazil
- Prior art keywords
- medium
- transistor
- analyte
- integrated circuit
- sensitive apparatus
- Prior art date
Links
- 239000012491 analyte Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000691 measurement method Methods 0.000 abstract 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
resumo circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio revela-se um circuito integrado (100) compreendendo um substrato semicondutor (110); uma camada de isolamento (120) sobre o dito substrato; um primeiro transistor (140a) sobre a dita camada de isolamento, o primeiro transistor compreendendo uma região de canal funcionalizado exposta (146a) entre uma região de origem (142a) e uma região de drenagem (144) para percepção de um analito em um meio; um segundo transistor (140b) sobre a dita camada de isolamento, o segundo transistor compreendendo uma região de canal exposta (146b) entre uma região de origem (142b) e uma região de drenagem (144) para percepção de um potencial do dito meio; e um gerador de influência de tensão (150) acoplado de maneira condutora ao substrato semicondutor para prover uma tensão de influência aos ditos transistores, o dito gerador de influência de tensão sendo responsivo ao segundo transistor. aparelho sensível compreendendo tal ci e um método de medição de analito utilizando tal ci também são revelados. 1/1
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261714400P | 2012-10-16 | 2012-10-16 | |
PCT/IB2013/059296 WO2014060916A1 (en) | 2012-10-16 | 2013-10-11 | Integrated circuit with sensing transistor array, sensing apparatus and measuring method |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112015008211A2 true BR112015008211A2 (pt) | 2017-07-04 |
BR112015008211B1 BR112015008211B1 (pt) | 2020-05-19 |
Family
ID=49911749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015008211A BR112015008211B1 (pt) | 2012-10-16 | 2013-10-11 | circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio |
Country Status (7)
Country | Link |
---|---|
US (1) | US10302590B2 (pt) |
EP (1) | EP2909616A1 (pt) |
JP (1) | JP6353454B2 (pt) |
CN (1) | CN104737008B (pt) |
BR (1) | BR112015008211B1 (pt) |
RU (1) | RU2650087C2 (pt) |
WO (1) | WO2014060916A1 (pt) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9797976B2 (en) * | 2013-12-11 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company | Biosensor calibration system and related method |
US10067070B2 (en) * | 2015-11-06 | 2018-09-04 | Applied Materials, Inc. | Particle monitoring device |
EP3442804A4 (en) * | 2016-09-23 | 2019-12-25 | Hewlett-Packard Development Company, L.P. | FLUID EJECTION DEVICE AND PARTICLE DETECTOR |
US10447202B2 (en) * | 2017-02-08 | 2019-10-15 | Texas Instruments Incorporated | Apparatus for communication across a capacitively coupled channel |
JP6740949B2 (ja) * | 2017-03-31 | 2020-08-19 | 日立金属株式会社 | ガスセンサ |
US11531027B2 (en) * | 2017-12-01 | 2022-12-20 | University Of Florida Research Foundation, Inc. | Low cost disposable medical sensor fabricated on glass, paper or plastics |
FR3077926B1 (fr) * | 2018-02-15 | 2023-04-14 | St Microelectronics Crolles 2 Sas | Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant. |
WO2020061509A2 (en) * | 2018-09-21 | 2020-03-26 | Teralytic Inc. | Extensible, multimodal sensor fusion platform for remote, proximal terrain sensing |
CN114674897B (zh) * | 2022-03-28 | 2023-06-06 | 深圳大学 | 一种用于检测单细胞外pH值的探针型有机电化学晶体管传感器及其制备方法、检测方法 |
EP4332562A1 (en) * | 2022-09-02 | 2024-03-06 | IQ Biozoom Sp. z o.o. | A mesfet biosensor and a biosensing kit |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004003535A1 (en) * | 2002-06-27 | 2004-01-08 | Nanosys Inc. | Planar nanowire based sensor elements, devices, systems and methods for using and making same |
US20060263255A1 (en) * | 2002-09-04 | 2006-11-23 | Tzong-Ru Han | Nanoelectronic sensor system and hydrogen-sensitive functionalization |
RU2257567C1 (ru) * | 2004-05-19 | 2005-07-27 | Воронежский государственный технический университет | Твердотельный интегральный датчик газов |
US20060188934A1 (en) * | 2005-02-22 | 2006-08-24 | Ying-Lan Chang | System and method for implementing a high-sensitivity sensor with improved stability |
TWI287041B (en) * | 2005-04-27 | 2007-09-21 | Jung-Tang Huang | An ultra-rapid DNA sequencing method with nano-transistors array based devices |
FR2886459B1 (fr) * | 2005-05-31 | 2007-08-24 | Thales Sa | Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes |
US8349604B2 (en) | 2006-06-15 | 2013-01-08 | University Of South Florida | Nano-based device for detection of disease biomarkers and other target molecules |
KR100799577B1 (ko) * | 2006-08-31 | 2008-01-30 | 한국전자통신연구원 | 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법 |
WO2008063901A1 (en) * | 2006-11-17 | 2008-05-29 | Trustees Of Boston University | Nanochannel-based sensor system for use in detecting chemical or biological species |
IL189576A0 (en) * | 2008-02-18 | 2008-12-29 | Technion Res & Dev Foundation | Chemically sensitive field effect transistors for explosive detection |
WO2009124111A2 (en) * | 2008-04-01 | 2009-10-08 | Trustees Of Boston University | Glucose sensor employing semiconductor nanoelectronic device |
WO2010023569A1 (en) * | 2008-08-25 | 2010-03-04 | Nxp B.V. | Reducing capacitive charging in electronic devices |
TWI383144B (zh) | 2008-09-23 | 2013-01-21 | Univ Nat Chiao Tung | 感測元件、製造方法及其生物檢測系統 |
US20100219085A1 (en) * | 2009-02-27 | 2010-09-02 | Edwards Lifesciences Corporation | Analyte Sensor Offset Normalization |
WO2010120297A1 (en) * | 2009-04-15 | 2010-10-21 | Hewlett-Packard Development Company, L.P | Nanowire sensor having a nanowire and electrically conductive film |
KR101217576B1 (ko) | 2009-09-22 | 2013-01-03 | 한국전자통신연구원 | 바이오 센서 및 그의 구동 방법 |
US8368123B2 (en) * | 2009-12-23 | 2013-02-05 | Nokia Corporation | Apparatus for sensing an event |
-
2013
- 2013-10-11 JP JP2015536269A patent/JP6353454B2/ja active Active
- 2013-10-11 BR BR112015008211A patent/BR112015008211B1/pt active IP Right Grant
- 2013-10-11 RU RU2015118418A patent/RU2650087C2/ru active
- 2013-10-11 CN CN201380053874.7A patent/CN104737008B/zh active Active
- 2013-10-11 WO PCT/IB2013/059296 patent/WO2014060916A1/en active Application Filing
- 2013-10-11 EP EP13815572.6A patent/EP2909616A1/en not_active Withdrawn
- 2013-10-11 US US14/434,559 patent/US10302590B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10302590B2 (en) | 2019-05-28 |
JP6353454B2 (ja) | 2018-07-04 |
CN104737008B (zh) | 2017-06-09 |
RU2015118418A (ru) | 2016-12-10 |
RU2650087C2 (ru) | 2018-04-06 |
US20150276667A1 (en) | 2015-10-01 |
BR112015008211B1 (pt) | 2020-05-19 |
CN104737008A (zh) | 2015-06-24 |
EP2909616A1 (en) | 2015-08-26 |
WO2014060916A1 (en) | 2014-04-24 |
JP2016502644A (ja) | 2016-01-28 |
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Legal Events
Date | Code | Title | Description |
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B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 11/10/2013, OBSERVADAS AS CONDICOES LEGAIS. |