BR112012014980A2 - célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma. - Google Patents

célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma.

Info

Publication number
BR112012014980A2
BR112012014980A2 BR112012014980A BR112012014980A BR112012014980A2 BR 112012014980 A2 BR112012014980 A2 BR 112012014980A2 BR 112012014980 A BR112012014980 A BR 112012014980A BR 112012014980 A BR112012014980 A BR 112012014980A BR 112012014980 A2 BR112012014980 A2 BR 112012014980A2
Authority
BR
Brazil
Prior art keywords
manufacturing
methods
solar cell
flow rate
film solar
Prior art date
Application number
BR112012014980A
Other languages
English (en)
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of BR112012014980A2 publication Critical patent/BR112012014980A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)

Abstract

célula solar com película fina de silício tendo turvação aperfeiçoada e métodos de fabricar a mesma. um método de aumentar a turvação de uma pilha de revestimento tendo uma camada superior e uma camada de revestimento inferior utilizando um processo de revestimento de depósito de vapor químico que inclui pelo menos um de: aumento de uma taxa de fluxo de precursor; diminuição de uma taxa de fluxo de gás transportador; aumento de uma temperatura de substrato; aumento de uma taxa de fluxo de água; diminuição de uma taxa de fluxo de descarga e aumento de uma espessura de pelo menos uma da camada superior ou camada de revestimento inferior.
BR112012014980A 2009-12-21 2010-12-06 célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma. BR112012014980A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,299 US9224892B2 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved haze and methods of making the same
PCT/US2010/059037 WO2011084292A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved haze and methods of making the same

Publications (1)

Publication Number Publication Date
BR112012014980A2 true BR112012014980A2 (pt) 2016-04-05

Family

ID=44149391

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012014980A BR112012014980A2 (pt) 2009-12-21 2010-12-06 célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma.

Country Status (12)

Country Link
US (1) US9224892B2 (pt)
EP (1) EP2517259B1 (pt)
JP (1) JP5607180B2 (pt)
KR (1) KR101511015B1 (pt)
BR (1) BR112012014980A2 (pt)
IN (1) IN2012DN05184A (pt)
MX (1) MX336541B (pt)
MY (1) MY159272A (pt)
RU (1) RU2526298C2 (pt)
TR (1) TR201908926T4 (pt)
TW (2) TW201631785A (pt)
WO (1) WO2011084292A2 (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9159851B2 (en) * 2010-05-26 2015-10-13 The University Of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
CN102420260A (zh) * 2011-11-03 2012-04-18 同济大学 薄膜硅太阳能电池的背散射表面及其制备方法
KR101684446B1 (ko) * 2013-03-12 2016-12-08 비트로, 에스.에이.비. 데 씨.브이. 태양 전지용 고 헤이즈 하부층
WO2015099871A1 (en) 2013-12-26 2015-07-02 Ppg Industries Ohio, Inc. Organic light emitting diode with light extracting electrode
CN107210367B (zh) * 2014-12-19 2020-01-21 联邦科学和工业研究组织 形成光电器件的光活性层的方法
JP6773944B2 (ja) * 2016-01-06 2020-10-21 ｉｎＱｓ株式会社 光発電素子
WO2018010680A1 (en) * 2016-07-14 2018-01-18 The Hong Kong Polytechnic University Rose petal textured haze film for photovoltaic cells
WO2019043398A1 (en) 2017-08-31 2019-03-07 Pilkington Group Limited COATED GLASS ARTICLE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC CELL MADE THEREWITH
US11485678B2 (en) 2017-08-31 2022-11-01 Pilkington Group Limited Chemical vapor deposition process for forming a silicon oxide coating

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971843A (en) 1983-07-29 1990-11-20 Ppg Industries, Inc. Non-iridescent infrared-reflecting coated glass
US4746347A (en) 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
US4792536A (en) 1987-06-29 1988-12-20 Ppg Industries, Inc. Transparent infrared absorbing glass and method of making
US4853257A (en) 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
US5030593A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5030594A (en) 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5240886A (en) 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
CZ289572B6 (cs) 1991-12-26 2002-02-13 Atofina Chemicals, Inc. Skleněný výrobek
US5599387A (en) 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
US5356718A (en) 1993-02-16 1994-10-18 Ppg Industries, Inc. Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates
FR2703999B1 (fr) * 1993-04-16 1995-05-24 Rhone Poulenc Chimie Nouveaux pigments minéraux colorés à base de sulfures de terres rares, procédé de synthèse et utilisations.
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
DE19713215A1 (de) 1997-03-27 1998-10-08 Forschungszentrum Juelich Gmbh Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle
EP1054454A3 (en) * 1999-05-18 2004-04-21 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
JP2002260448A (ja) * 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
JP5068946B2 (ja) * 2003-05-13 2012-11-07 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
JPWO2005041216A1 (ja) 2003-10-23 2007-11-29 株式会社ブリヂストン 透明導電性基板、色素増感型太陽電池用電極及び色素増感型太陽電池
JP2005311292A (ja) * 2004-03-25 2005-11-04 Kaneka Corp 薄膜太陽電池用基板、及びその製造方法、並びにそれを用いた薄膜太陽電池
WO2005093854A1 (ja) 2004-03-25 2005-10-06 Kaneka Corporation 薄膜太陽電池用基板、及びその製造方法、並びにそれを用いた薄膜太陽電池
JP2006032785A (ja) * 2004-07-20 2006-02-02 Sumco Corp Ｓｏｉ基板の製造方法及びｓｏｉ基板
US7431992B2 (en) * 2004-08-09 2008-10-07 Ppg Industries Ohio, Inc. Coated substrates that include an undercoating
JP3954085B2 (ja) * 2005-10-07 2007-08-08 シャープ株式会社 光電変換素子およびこれを用いた太陽電池
EP1950813A4 (en) * 2005-11-17 2010-07-21 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
US8097340B2 (en) * 2006-02-08 2012-01-17 Ppg Industries Ohio, Inc. Coated substrates having undercoating layers that exhibit improved photocatalytic activity
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
CN101904013B (zh) 2007-12-19 2013-05-08 欧瑞康太阳能(处贝区市)公司 用于获得沉积于高度纹理化基板上的高性能薄膜装置的方法
JP5280708B2 (ja) * 2008-03-06 2013-09-04 シャープ株式会社 太陽電池モジュール

Also Published As

Publication number Publication date
RU2526298C2 (ru) 2014-08-20
MX2012006821A (es) 2012-07-23
TR201908926T4 (tr) 2019-07-22
KR20120096099A (ko) 2012-08-29
US20110146767A1 (en) 2011-06-23
KR101511015B1 (ko) 2015-04-13
WO2011084292A3 (en) 2011-09-09
US9224892B2 (en) 2015-12-29
TW201138125A (en) 2011-11-01
CN102652365A (zh) 2012-08-29
JP2013515373A (ja) 2013-05-02
EP2517259B1 (en) 2019-04-17
IN2012DN05184A (pt) 2015-10-23
MY159272A (en) 2016-12-30
WO2011084292A2 (en) 2011-07-14
JP5607180B2 (ja) 2014-10-15
TW201631785A (zh) 2016-09-01
RU2012131142A (ru) 2014-01-27
MX336541B (es) 2016-01-22
EP2517259A2 (en) 2012-10-31
TWI524539B (zh) 2016-03-01

Similar Documents

Publication Publication Date Title
BR112012014980A2 (pt) célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma.
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
MY145709A (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
US9281420B2 (en) Chemical vapor deposited film formed by plasma CVD method
WO2011028377A3 (en) High concentration water pulses for atomic layer deposition
WO2010138811A3 (en) Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
TW200943419A (en) Low wet etch rate silicon nitride film
WO2006127462A3 (en) Method to increase the compressive stress of pecvd silicon nitride films
WO2014052747A3 (en) Methods and structures for forming and protecting thin films on substrates
SG155840A1 (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
WO2010054184A3 (en) Chemical vapor deposition with elevated temperature gas injection
WO2008073926A3 (en) Formation of epitaxial layers containing silicon
WO2012069451A3 (en) Thermal gradient chemical vapour deposition apparatus and method
MX2010007723A (es) Dispositivos fotovoltaicos tratados con plasma.
WO2013124394A3 (de) Verfahren zum herstellen einer solarzelle
WO2009041660A1 (ja) 太陽電池用基板および太陽電池
WO2011009007A3 (en) Improved lift pin guides
WO2012170166A3 (en) Method and system for inline chemical vapor deposition
WO2013132890A1 (ja) シリコン含有膜及びシリコン含有膜形成方法
PL2155403T3 (pl) Sposób powierzchniowej modyfikacji podłoży płaskich
FI20115321A0 (fi) Menetelmä yhden tai useamman monikiteisen piikerroksen kerrrostamiseksi substraatille
EA201390594A1 (ru) Разделение модульного устройства для нанесения покрытия
CN106653872B (zh) 一种抗pid效应的太阳能电池
ATE541065T1 (de) Verfahren zur herstellung von dünnschichten und vorrichtungen
WO2010111286A3 (en) High temperature thin film transistor on soda lime glass

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]