BE778529A - Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires - Google Patents
Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementairesInfo
- Publication number
- BE778529A BE778529A BE778529A BE778529A BE778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A BE 778529 A BE778529 A BE 778529A
- Authority
- BE
- Belgium
- Prior art keywords
- memory element
- semiconductor component
- integrated semiconductor
- especially low
- made following
- Prior art date
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712103573 DE2103573A1 (de) | 1971-01-26 | 1971-01-26 | Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik |
Publications (1)
Publication Number | Publication Date |
---|---|
BE778529A true BE778529A (fr) | 1972-05-16 |
Family
ID=5796939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE778529A BE778529A (fr) | 1971-01-26 | 1972-01-26 | Composant integre a semiconducteur, notamment element de memoire a faibles pertes, realise suivant la technique a canaux complementaires |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE778529A (xx) |
DE (1) | DE2103573A1 (xx) |
FR (1) | FR2123337A1 (xx) |
GB (1) | GB1358795A (xx) |
IT (1) | IT946799B (xx) |
LU (1) | LU64648A1 (xx) |
NL (1) | NL7201066A (xx) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4653026A (en) * | 1981-08-12 | 1987-03-24 | Hitachi, Ltd. | Nonvolatile memory device or a single crystal silicon film |
JPS58186961A (ja) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | 半導体装置 |
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
-
1971
- 1971-01-26 DE DE19712103573 patent/DE2103573A1/de active Pending
-
1972
- 1972-01-19 FR FR7201674A patent/FR2123337A1/fr not_active Withdrawn
- 1972-01-21 GB GB291172A patent/GB1358795A/en not_active Expired
- 1972-01-21 IT IT1965872A patent/IT946799B/it active
- 1972-01-24 LU LU64648D patent/LU64648A1/xx unknown
- 1972-01-26 NL NL7201066A patent/NL7201066A/xx unknown
- 1972-01-26 BE BE778529A patent/BE778529A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2123337A1 (xx) | 1972-09-08 |
LU64648A1 (xx) | 1972-06-26 |
NL7201066A (xx) | 1972-07-28 |
DE2103573A1 (de) | 1972-08-03 |
IT946799B (it) | 1973-05-21 |
GB1358795A (en) | 1974-07-03 |
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