BE768301A - PLANT FOR THE MANUFACTURING OF TUBULAR BODIES IN SEMICONDUCTOR MATERIAL, PREFERRED IN SILICON OR GERMANIUM - Google Patents

PLANT FOR THE MANUFACTURING OF TUBULAR BODIES IN SEMICONDUCTOR MATERIAL, PREFERRED IN SILICON OR GERMANIUM

Info

Publication number
BE768301A
BE768301A BE768301A BE768301A BE768301A BE 768301 A BE768301 A BE 768301A BE 768301 A BE768301 A BE 768301A BE 768301 A BE768301 A BE 768301A BE 768301 A BE768301 A BE 768301A
Authority
BE
Belgium
Prior art keywords
germanium
plant
silicon
manufacturing
preferred
Prior art date
Application number
BE768301A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE768301A publication Critical patent/BE768301A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
BE768301A 1970-10-12 1971-06-09 PLANT FOR THE MANUFACTURING OF TUBULAR BODIES IN SEMICONDUCTOR MATERIAL, PREFERRED IN SILICON OR GERMANIUM BE768301A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2050076A DE2050076C3 (en) 1970-10-12 1970-10-12 Device for manufacturing tubes from semiconductor material

Publications (1)

Publication Number Publication Date
BE768301A true BE768301A (en) 1971-11-03

Family

ID=5784889

Family Applications (1)

Application Number Title Priority Date Filing Date
BE768301A BE768301A (en) 1970-10-12 1971-06-09 PLANT FOR THE MANUFACTURING OF TUBULAR BODIES IN SEMICONDUCTOR MATERIAL, PREFERRED IN SILICON OR GERMANIUM

Country Status (13)

Country Link
US (1) US3746496A (en)
JP (1) JPS491393B1 (en)
BE (1) BE768301A (en)
CA (1) CA959382A (en)
CH (1) CH528301A (en)
CS (1) CS188118B2 (en)
DE (1) DE2050076C3 (en)
DK (1) DK133604C (en)
FR (1) FR2111084A5 (en)
GB (1) GB1347368A (en)
NL (1) NL7111264A (en)
SE (1) SE367443B (en)
SU (1) SU430532A3 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (en) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of trays for holding crystal disks in diffusion and tempering processes
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
JPS58177460U (en) * 1982-05-19 1983-11-28 後藤　定三 color lock
JP2725081B2 (en) * 1990-07-05 1998-03-09 富士通株式会社 Heat treatment equipment for semiconductor device manufacturing
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
JP5309963B2 (en) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 Polycrystalline silicon silicon core rod assembly and manufacturing method thereof, polycrystalline silicon manufacturing apparatus, and polycrystalline silicon manufacturing method
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
EP2271788A2 (en) * 2008-03-26 2011-01-12 GT Solar Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
JP5636365B2 (en) * 2008-06-23 2014-12-03 ジーティーエイティー・コーポレーション Chuck-bridge junction for tubular filaments in chemical vapor deposition reactors
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
CN103158202B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of hollow silicon core
CN103158200B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of C-shaped silicon core
CN103158201B (en) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 The bridging method of a kind of hollow silicon core and solid silicon core
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
WO2020069722A1 (en) * 2018-10-01 2020-04-09 Flowil International Lighting (Holding) B.V. Linear led light source and manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
NL238464A (en) * 1958-05-29
NL124906C (en) * 1958-12-09
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
DE1223804B (en) * 1961-01-26 1966-09-01 Siemens Ag Device for the extraction of pure semiconductor material, such as silicon

Also Published As

Publication number Publication date
SE367443B (en) 1974-05-27
CS188118B2 (en) 1979-02-28
NL7111264A (en) 1972-04-14
DE2050076A1 (en) 1972-04-13
JPS491393B1 (en) 1974-01-12
DE2050076C3 (en) 1980-06-26
DE2050076B2 (en) 1979-07-26
FR2111084A5 (en) 1972-06-02
CH528301A (en) 1972-09-30
US3746496A (en) 1973-07-17
GB1347368A (en) 1974-02-27
CA959382A (en) 1974-12-17
SU430532A3 (en) 1974-05-30
DK133604B (en) 1976-06-14
DK133604C (en) 1976-11-01

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