IT1012045B - DEVICE FOR MANUFACTURING SILICON TUBULAR OBJETS - Google Patents

DEVICE FOR MANUFACTURING SILICON TUBULAR OBJETS

Info

Publication number
IT1012045B
IT1012045B IT29841/72A IT2984172A IT1012045B IT 1012045 B IT1012045 B IT 1012045B IT 29841/72 A IT29841/72 A IT 29841/72A IT 2984172 A IT2984172 A IT 2984172A IT 1012045 B IT1012045 B IT 1012045B
Authority
IT
Italy
Prior art keywords
objets
manufacturing silicon
silicon tubular
tubular
manufacturing
Prior art date
Application number
IT29841/72A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2149526A external-priority patent/DE2149526C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1012045B publication Critical patent/IT1012045B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT29841/72A 1971-10-04 1972-09-29 DEVICE FOR MANUFACTURING SILICON TUBULAR OBJETS IT1012045B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2149526A DE2149526C3 (en) 1970-10-12 1971-10-04 Device for manufacturing tubes from silicon

Publications (1)

Publication Number Publication Date
IT1012045B true IT1012045B (en) 1977-03-10

Family

ID=5821454

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29841/72A IT1012045B (en) 1971-10-04 1972-09-29 DEVICE FOR MANUFACTURING SILICON TUBULAR OBJETS

Country Status (6)

Country Link
US (1) US3820935A (en)
JP (1) JPS4844159A (en)
CS (1) CS188126B4 (en)
DD (1) DD99550A5 (en)
DK (1) DK145064C (en)
IT (1) IT1012045B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
JP2725081B2 (en) * 1990-07-05 1998-03-09 富士通株式会社 Heat treatment equipment for semiconductor device manufacturing
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
KR101811872B1 (en) * 2007-09-20 2017-12-22 미츠비시 마테리알 가부시키가이샤 Reactor for polycrystalline silicon and polycrystalline silicon production method
JP5309963B2 (en) * 2007-12-28 2013-10-09 三菱マテリアル株式会社 Polycrystalline silicon silicon core rod assembly and manufacturing method thereof, polycrystalline silicon manufacturing apparatus, and polycrystalline silicon manufacturing method
KR101064176B1 (en) * 2009-01-15 2011-09-15 주식회사수성기술 Seed filament for manufacturing Polycrystalline Silicon Rod
CN103158202B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of hollow silicon core
CN103158200B (en) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 A kind of bridging method of C-shaped silicon core
CN103158201B (en) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 The bridging method of a kind of hollow silicon core and solid silicon core
US10100439B2 (en) 2015-05-08 2018-10-16 Sunpower Corporation High throughput chemical vapor deposition electrode

Also Published As

Publication number Publication date
CS188126B4 (en) 1979-02-28
US3820935A (en) 1974-06-28
DD99550A5 (en) 1973-08-12
DK145064B (en) 1982-08-16
JPS4844159A (en) 1973-06-25
DK145064C (en) 1983-01-24

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