BE511293A - - Google Patents

Info

Publication number
BE511293A
BE511293A BE511293DA BE511293A BE 511293 A BE511293 A BE 511293A BE 511293D A BE511293D A BE 511293DA BE 511293 A BE511293 A BE 511293A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE511293A publication Critical patent/BE511293A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
BE511293D 1951-08-24 BE511293A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US243541A US2744970A (en) 1951-08-24 1951-08-24 Semiconductor signal translating devices

Publications (1)

Publication Number Publication Date
BE511293A true BE511293A (xx)

Family

ID=22919151

Family Applications (1)

Application Number Title Priority Date Filing Date
BE511293D BE511293A (xx) 1951-08-24

Country Status (5)

Country Link
US (1) US2744970A (xx)
BE (1) BE511293A (xx)
FR (1) FR1060119A (xx)
GB (1) GB748487A (xx)
NL (1) NL91981C (xx)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
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US3162556A (en) * 1953-01-07 1964-12-22 Hupp Corp Introduction of disturbance points in a cadmium sulfide transistor
US2849342A (en) * 1953-03-17 1958-08-26 Rca Corp Semiconductor devices and method of making them
BE528756A (xx) * 1953-05-11
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
US2888648A (en) * 1954-03-31 1959-05-26 Hazeltine Research Inc Transistor reactance device
NL196121A (xx) * 1954-03-31
NL110970C (xx) * 1954-10-18
US2993998A (en) * 1955-06-09 1961-07-25 Sprague Electric Co Transistor combinations
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
NL210117A (xx) * 1956-08-24
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
GB856430A (en) * 1956-12-13 1960-12-14 Mullard Ltd Improvements in and relating to semi-conductive devices
DE1094884B (de) * 1956-12-13 1960-12-15 Philips Nv Feldeffekt-Transistor mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps und einer Nut zwischen den zwei ohmschen Elektroden und Verfahren zu seiner Herstellung
US2939057A (en) * 1957-05-27 1960-05-31 Teszner Stanislas Unipolar field-effect transistors
US3047437A (en) * 1957-08-19 1962-07-31 Int Rectifier Corp Method of making a rectifier
US2869055A (en) * 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
BE572049A (xx) * 1957-12-03 1900-01-01
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
US3005107A (en) * 1959-06-04 1961-10-17 Hoffman Electronics Corp Photoconductive devices
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
GB955093A (xx) * 1959-07-31
FR1249279A (fr) * 1959-11-07 1960-12-30 Perfectionnements aux procédés de fabrication des transistors à effet de champ àélectrodes annulaires
US3062972A (en) * 1959-11-25 1962-11-06 Bell Telephone Labor Inc Field effect avalanche transistor circuit with selective reverse biasing means
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
NL260481A (xx) * 1960-02-08
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
US3257631A (en) * 1960-05-02 1966-06-21 Texas Instruments Inc Solid-state semiconductor network
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3173020A (en) * 1960-06-23 1965-03-09 Robert B Seeds Devices for producing voltage pulses
US3152840A (en) * 1960-10-20 1964-10-13 Westinghouse Electric Corp Semiconductor potentiometer
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3148344A (en) * 1961-03-24 1964-09-08 Westinghouse Electric Corp Adjustable resistance-capacitance band pass filter using integral semiconductor having two reverse biased junctions
US3250917A (en) * 1961-04-12 1966-05-10 Rca Corp Logic circuits
NL282170A (xx) * 1961-08-17
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3258723A (en) * 1962-01-30 1966-06-28 Osafune ia
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3265899A (en) * 1962-07-25 1966-08-09 Gen Motors Corp Semiconductor amplifying radiation detector
US3275845A (en) * 1962-12-27 1966-09-27 Motorola Inc Field switching device employing punchthrough phenomenon
BE643857A (xx) * 1963-02-14
US3290613A (en) * 1963-02-25 1966-12-06 Rca Corp Semiconductor signal translating circuit
US3281699A (en) * 1963-02-25 1966-10-25 Rca Corp Insulated-gate field-effect transistor oscillator circuits
DE1228723B (de) * 1963-03-14 1966-11-17 Telefunken Patent Verfahren zum Herstellen eines Unipolartransistors und Aufbau dieses Unipolartransistors
US3327133A (en) * 1963-05-28 1967-06-20 Rca Corp Electronic switching
US3333326A (en) * 1964-06-29 1967-08-01 Ibm Method of modifying electrical characteristic of semiconductor member
US3327525A (en) * 1964-08-10 1967-06-27 Raytheon Co Scribed and notched pn-junction transducers
US3930300A (en) * 1973-04-04 1976-01-06 Harris Corporation Junction field effect transistor
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same
US4442445A (en) * 1981-11-23 1984-04-10 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier gate field effect transistor
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
US4800415A (en) * 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
US6936496B2 (en) * 2002-12-20 2005-08-30 Hewlett-Packard Development Company, L.P. Nanowire filament
US7223611B2 (en) * 2003-10-07 2007-05-29 Hewlett-Packard Development Company, L.P. Fabrication of nanowires
US7132298B2 (en) * 2003-10-07 2006-11-07 Hewlett-Packard Development Company, L.P. Fabrication of nano-object array
US7407738B2 (en) * 2004-04-02 2008-08-05 Pavel Kornilovich Fabrication and use of superlattice
US20050241959A1 (en) * 2004-04-30 2005-11-03 Kenneth Ward Chemical-sensing devices
US7247531B2 (en) 2004-04-30 2007-07-24 Hewlett-Packard Development Company, L.P. Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same
US7683435B2 (en) 2004-04-30 2010-03-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant multiplexing/demultiplexing architectures
US20060024814A1 (en) * 2004-07-29 2006-02-02 Peters Kevin F Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same
US7375012B2 (en) * 2005-02-28 2008-05-20 Pavel Kornilovich Method of forming multilayer film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
NL145843B (nl) * 1948-04-23 Merck & Co Inc Werkwijze voor het bereiden van derivaten van 3-hydroxy alfa-(1-aminoethyl)benzylalcohol; werkwijze ter bereiding van farmaceutische preparaten, alsmede de door toepassing van die werkwijze verkregen voorwerpen.
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
US2502488A (en) * 1948-09-24 1950-04-04 Bell Telephone Labor Inc Semiconductor amplifier
US2553490A (en) * 1949-02-21 1951-05-15 Bell Telephone Labor Inc Magnetic control of semiconductor currents
BE495936A (xx) * 1949-10-11

Also Published As

Publication number Publication date
FR1060119A (fr) 1954-03-30
US2744970A (en) 1956-05-08
NL91981C (xx)
GB748487A (en) 1956-05-02

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