AU6319796A - Method of production of semiconductor integrated circuit device - Google Patents

Method of production of semiconductor integrated circuit device

Info

Publication number
AU6319796A
AU6319796A AU63197/96A AU6319796A AU6319796A AU 6319796 A AU6319796 A AU 6319796A AU 63197/96 A AU63197/96 A AU 63197/96A AU 6319796 A AU6319796 A AU 6319796A AU 6319796 A AU6319796 A AU 6319796A
Authority
AU
Australia
Prior art keywords
production
integrated circuit
semiconductor integrated
circuit device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU63197/96A
Inventor
Takao Kumihashi
Takashi Yunogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of AU6319796A publication Critical patent/AU6319796A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
AU63197/96A 1996-07-08 1996-07-08 Method of production of semiconductor integrated circuit device Abandoned AU6319796A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/001889 WO1998001895A1 (en) 1996-07-08 1996-07-08 Method of production of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
AU6319796A true AU6319796A (en) 1998-02-02

Family

ID=14153524

Family Applications (1)

Application Number Title Priority Date Filing Date
AU63197/96A Abandoned AU6319796A (en) 1996-07-08 1996-07-08 Method of production of semiconductor integrated circuit device

Country Status (2)

Country Link
AU (1) AU6319796A (en)
WO (1) WO1998001895A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP4657521B2 (en) * 2001-08-28 2011-03-23 東京エレクトロン株式会社 Plasma processing equipment
JP2003332465A (en) * 2002-05-14 2003-11-21 Mitsubishi Electric Corp Method of manufacturing semiconductor memory device
JP3886953B2 (en) 2003-10-22 2007-02-28 株式会社東芝 OPTICAL PROCESS MONITOR DEVICE, OPTICAL PROCESS MONITOR METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
JP4496191B2 (en) * 2006-09-29 2010-07-07 株式会社東芝 OPTICAL PROCESS MONITOR DEVICE, OPTICAL PROCESS MONITOR METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
WO2008117426A1 (en) 2007-03-27 2008-10-02 Fujitsu Microelectronics Limited Semiconductor device and process for producing the same
JP6198622B2 (en) * 2014-02-04 2017-09-20 クアーズテック株式会社 Silica ventilation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299601A (en) * 1992-02-20 1993-11-12 Mitsubishi Electric Corp Semiconductor device and its manufacture
JP3231560B2 (en) * 1994-09-06 2001-11-26 株式会社東芝 Plasma etching equipment

Also Published As

Publication number Publication date
WO1998001895A1 (en) 1998-01-15

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