AU5059200A - Solar cell and method for producing a solar cell - Google Patents

Solar cell and method for producing a solar cell

Info

Publication number
AU5059200A
AU5059200A AU50592/00A AU5059200A AU5059200A AU 5059200 A AU5059200 A AU 5059200A AU 50592/00 A AU50592/00 A AU 50592/00A AU 5059200 A AU5059200 A AU 5059200A AU 5059200 A AU5059200 A AU 5059200A
Authority
AU
Australia
Prior art keywords
solar cell
producing
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU50592/00A
Inventor
Thomas Hoffmann
Klaus Jacobs
Klaus Kalberlah
Andreas Kampmann
Rainer Moller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CIS Solartechnik GmbH and Co KG
Original Assignee
PMC PRODUCT MAN CONSULT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PMC PRODUCT MAN CONSULT GmbH filed Critical PMC PRODUCT MAN CONSULT GmbH
Publication of AU5059200A publication Critical patent/AU5059200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AU50592/00A 1999-04-10 2000-04-10 Solar cell and method for producing a solar cell Abandoned AU5059200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19917758A DE19917758C2 (en) 1999-04-10 1999-04-10 Process for the production of a CuInSe2 (CIS) solar cell
DE19917758 1999-04-10
PCT/DE2000/001073 WO2000062347A2 (en) 1999-04-10 2000-04-10 Solar cell and method for producing a solar cell

Publications (1)

Publication Number Publication Date
AU5059200A true AU5059200A (en) 2000-11-14

Family

ID=7905163

Family Applications (1)

Application Number Title Priority Date Filing Date
AU50592/00A Abandoned AU5059200A (en) 1999-04-10 2000-04-10 Solar cell and method for producing a solar cell

Country Status (4)

Country Link
EP (1) EP1177584A2 (en)
AU (1) AU5059200A (en)
DE (1) DE19917758C2 (en)
WO (1) WO2000062347A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2839201B1 (en) * 2002-04-29 2005-04-01 Electricite De France PROCESS FOR PRODUCING THIN-FILM SEMICONDUCTORS BASED ON COMPOUNDS I-III-VI2 FOR PHOTOVOLTAIC APPLICATIONS
DE10247402A1 (en) * 2002-10-03 2004-04-22 Cis Solartechnik Gmbh Substrate for copper indium sulfide thin layer solar cell has blocking layer with gaps for connection between carrier and contact layer
DE102004013442B4 (en) * 2004-03-14 2006-05-24 Klaus Dr. Kalberlah Production of strip-like solar cells comprises simultaneously processing two strips in which they are adhered together on their rear sides in a galvanic method, separated, rotated and sewn together
DE102006041046A1 (en) * 2006-09-01 2008-03-06 Cis Solartechnik Gmbh & Co. Kg Solar cell, process for the production of solar cells and electrical trace
WO2009030281A1 (en) * 2007-09-07 2009-03-12 ETH Zürich Method of forming thin film solar cell
DE102008020749A1 (en) * 2008-04-22 2009-10-29 Cis Solartechnik Gmbh & Co. Kg Process for producing a solar cell
ES2624637T3 (en) 2008-05-30 2017-07-17 Atotech Deutschland Gmbh Electrogalvanoplasty additive for the deposition of an alloy of a metal of group IB / binary or ternary of group IB-group IIIA / ternary, quaternary or quinary of group IB, group IIIA-group VIA
EP2159846A1 (en) 2008-08-29 2010-03-03 ODERSUN Aktiengesellschaft Thin film solar cell and photovoltaic string assembly
DE102008049374A1 (en) 2008-09-27 2010-04-01 JODLAUK, Jörg Semiconductor fiber structure for manufacturing e.g. thick film solar cell, has one, two and three dimensional structures including preset geometry and alignment, and utilized in solar cells for power generation
US7923628B2 (en) * 2009-09-09 2011-04-12 International Business Machines Corporation Method of controlling the composition of a photovoltaic thin film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4103291A1 (en) * 1990-09-22 1992-04-02 Battelle Institut E V METHOD FOR PRODUCING AN ABSORBER LAYER FOR SOLAR CELLS USING GALVANIC DEPOSITION TECHNOLOGY
DE4225385C2 (en) * 1992-07-31 1994-09-29 Siemens Solar Gmbh Process for the inexpensive production of a layer of a ternary compound semiconductor
US5578503A (en) * 1992-09-22 1996-11-26 Siemens Aktiengesellschaft Rapid process for producing a chalcopyrite semiconductor on a substrate
DE19634580C2 (en) * 1996-08-27 1998-07-02 Inst Solar Technologien Method for producing a CIS band solar cell and device for carrying out the method

Also Published As

Publication number Publication date
DE19917758C2 (en) 2003-08-28
WO2000062347A2 (en) 2000-10-19
WO2000062347A3 (en) 2001-03-01
DE19917758A1 (en) 2000-10-19
EP1177584A2 (en) 2002-02-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase