AU4365096A - Integrated circuit capacitors utilizing low curie point ferroelectrics - Google Patents

Integrated circuit capacitors utilizing low curie point ferroelectrics

Info

Publication number
AU4365096A
AU4365096A AU43650/96A AU4365096A AU4365096A AU 4365096 A AU4365096 A AU 4365096A AU 43650/96 A AU43650/96 A AU 43650/96A AU 4365096 A AU4365096 A AU 4365096A AU 4365096 A AU4365096 A AU 4365096A
Authority
AU
Australia
Prior art keywords
ferroelectrics
integrated circuit
curie point
utilizing low
low curie
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU43650/96A
Inventor
Tate Evans Joseph Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiant Tech Co
Original Assignee
TATE EVANS JOSEPH JR
Radiant Tech Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TATE EVANS JOSEPH JR, Radiant Tech Co filed Critical TATE EVANS JOSEPH JR
Publication of AU4365096A publication Critical patent/AU4365096A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
AU43650/96A 1994-11-15 1995-11-15 Integrated circuit capacitors utilizing low curie point ferroelectrics Abandoned AU4365096A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33983994A 1994-11-15 1994-11-15
US339839 1994-11-15
PCT/US1995/014875 WO1996015556A1 (en) 1994-11-15 1995-11-15 Integrated circuit capacitors utilizing low curie point ferroelectrics

Publications (1)

Publication Number Publication Date
AU4365096A true AU4365096A (en) 1996-06-06

Family

ID=23330842

Family Applications (1)

Application Number Title Priority Date Filing Date
AU43650/96A Abandoned AU4365096A (en) 1994-11-15 1995-11-15 Integrated circuit capacitors utilizing low curie point ferroelectrics

Country Status (2)

Country Link
AU (1) AU4365096A (en)
WO (1) WO1996015556A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5977577A (en) * 1994-11-15 1999-11-02 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4041271C2 (en) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Semiconductor device with a ferroelectric capacitor
KR100349999B1 (en) * 1990-04-24 2002-12-11 세이코 엡슨 가부시키가이샤 Semiconductor device with ferroelectric and manufacturing method
US5357460A (en) * 1991-05-28 1994-10-18 Sharp Kabushiki Kaisha Semiconductor memory device having two transistors and at least one ferroelectric film capacitor
US5382817A (en) * 1992-02-20 1995-01-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a ferroelectric capacitor with a planarized lower electrode
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
US5383151A (en) * 1993-08-02 1995-01-17 Sharp Kabushiki Kaisha Dynamic random access memory

Also Published As

Publication number Publication date
WO1996015556A1 (en) 1996-05-23

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