AU2282301A - In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning - Google Patents
In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaningInfo
- Publication number
- AU2282301A AU2282301A AU22823/01A AU2282301A AU2282301A AU 2282301 A AU2282301 A AU 2282301A AU 22823/01 A AU22823/01 A AU 22823/01A AU 2282301 A AU2282301 A AU 2282301A AU 2282301 A AU2282301 A AU 2282301A
- Authority
- AU
- Australia
- Prior art keywords
- etch
- chamber cleaning
- photoresist
- situ post
- polymer stripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004140 cleaning Methods 0.000 title 1
- 238000011065 in-situ storage Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47473599A | 1999-12-29 | 1999-12-29 | |
US09474735 | 1999-12-29 | ||
PCT/US2000/034657 WO2001048804A1 (en) | 1999-12-29 | 2000-12-19 | In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2282301A true AU2282301A (en) | 2001-07-09 |
Family
ID=23884739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU22823/01A Abandoned AU2282301A (en) | 1999-12-29 | 2000-12-19 | In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2282301A (en) |
WO (1) | WO2001048804A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102427056A (en) * | 2011-08-29 | 2012-04-25 | 上海华力微电子有限公司 | Photoresist removing method in integrated oxide film etching process |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63229828A (en) * | 1987-03-19 | 1988-09-26 | Fujitsu Ltd | Ashing of resist |
JPH01206624A (en) * | 1988-02-15 | 1989-08-18 | Koujiyundo Kagaku Kenkyusho:Kk | Dry etching of resist |
JPH02102528A (en) * | 1988-10-12 | 1990-04-16 | Chlorine Eng Corp Ltd | Ashing process |
DE4202158C1 (en) * | 1992-01-27 | 1993-07-22 | Siemens Ag, 8000 Muenchen, De | |
US5417826A (en) * | 1992-06-15 | 1995-05-23 | Micron Technology, Inc. | Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors |
US5346586A (en) * | 1992-12-23 | 1994-09-13 | Micron Semiconductor, Inc. | Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip |
-
2000
- 2000-12-19 AU AU22823/01A patent/AU2282301A/en not_active Abandoned
- 2000-12-19 WO PCT/US2000/034657 patent/WO2001048804A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2001048804A1 (en) | 2001-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2003262408A1 (en) | Method for removing photoresist and etch residues | |
AU2001287147A1 (en) | Fluorinated phenolic polymers and photoresist compositions comprising same | |
AU6080900A (en) | Compositions and processes for spin etch planarization | |
AU2001278890A1 (en) | Compositions for cleaning organic and plasma etched residues for semiconductor devices | |
AU4156497A (en) | Non-corrosive cleaning composition for removing plasma etching residues | |
SG76650A1 (en) | Photoresist stripping composition and process for stripping photoresist | |
AU2001283087A1 (en) | Wall switch device and power outlet device | |
AU2001255442A1 (en) | Suspensions of water soluble polymers in surfactant free non-aqueous solvents | |
AU2001270205A1 (en) | Method and apparatus for wafer cleaning | |
AU2001285973A1 (en) | Method and equipment for cleaning and maintaining rolls | |
AU3583301A (en) | Electric switch devices | |
AU2002222670A1 (en) | Cleaning and etching methods and their apparatuses | |
AU6634901A (en) | Conductive contact | |
EP0797242A3 (en) | Etching high aspect contact holes in solid state devices | |
EP1158212A3 (en) | Hydraulic circuit cleaning apparatus and method | |
SG83790A1 (en) | Selective dry etch of dielectric film | |
AU2001280173A1 (en) | Dielectric filter | |
AU2282301A (en) | In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning | |
AU3054001A (en) | Dielectric porcelain composition and dielectric resonator using the same | |
AU2001292472A1 (en) | Rf connector | |
AU2001220537A1 (en) | Non-film-forming electrophoretic latexes in fluorocarbon solvents | |
AU2867299A (en) | Fast single-article megasonic cleaning process | |
AU6955698A (en) | Method for removing photoresist and plasma etch residues | |
AU2275099A (en) | High pressure cleaning device | |
AU2001286154A1 (en) | Process and apparatus for cleaning footwear |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |