JPH01206624A - Dry etching of resist - Google Patents
Dry etching of resistInfo
- Publication number
- JPH01206624A JPH01206624A JP3210488A JP3210488A JPH01206624A JP H01206624 A JPH01206624 A JP H01206624A JP 3210488 A JP3210488 A JP 3210488A JP 3210488 A JP3210488 A JP 3210488A JP H01206624 A JPH01206624 A JP H01206624A
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- resist
- gasses
- mixed
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 4
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 150000001721 carbon Chemical class 0.000 claims abstract description 3
- 150000002829 nitrogen Chemical class 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の目的）
産業上の利用分野
本発明は、半導体素子の製造工程における微細加工に用
いられるレジストのドライエツチング法に関する。DETAILED DESCRIPTION OF THE INVENTION (Object of the Invention) Industrial Field of Application The present invention relates to a resist dry etching method used for microfabrication in the manufacturing process of semiconductor devices.
従来の技術
従来、ＬＳＩ等の半導体素子の製造工程における微細加
工の殆んどは、フォトレジストとエツチング技術を用い
るフォトリソグラフィによって行われている。2. Description of the Related Art Conventionally, most of the fine processing in the manufacturing process of semiconductor devices such as LSIs has been performed by photolithography using photoresist and etching technology.
このフォトリソグラフイエ程は、でき上ったデバイスの
性能を左右する重要な工程であり、その工程の概要は次
の通りである。This photolithography process is an important process that affects the performance of the completed device, and the outline of the process is as follows.
（１）フォトレジストの塗布
（２）プリベーク
（３）露光
（４）現像
（５）ボストベーク
（６）エツチング
（７）レジスト除去
シストパターンを得ている。具体的な方法は、ノズルか
らウェーハ上に現像液を滴下させ、スピンナによりウェ
ーハを回転させて現像液を振り切つている。現像液は有
機溶剤またはアルカリ水溶液が用いられている。(1) Application of photoresist (2) Prebake (3) Exposure (4) Development (5) Bost bake (6) Etching (7) Resist removal Obtaining a cyst pattern. A specific method is to drop a developer onto the wafer from a nozzle, and then rotate the wafer using a spinner to shake off the developer. An organic solvent or an alkaline aqueous solution is used as the developer.
また、レジスト除去工程は下地の微細加工が終了して不
要となったレジストを除去する工程であり、硫酸、過酸
化水素のようなハク離液を用いてレジストを除去してい
る。Further, the resist removal step is a step of removing unnecessary resist after the microfabrication of the base is completed, and the resist is removed using a peeling liquid such as sulfuric acid or hydrogen peroxide.
この二つの工程は、現像液やハク離液を用いる湿式法で
あるが、しかし、最近、これらの工程に酸素プラズマを
用いるドライエツチング法が盛んになってきている。These two steps are wet methods using a developing solution and a peeling solution, but recently, a dry etching method using oxygen plasma in these steps has become popular.
ドライエツチングは、エツチング液を用いる湿式エツチ
ングによっては加工しにくい基板（例えば窒化シリコン
）も容易に加工でき、またサイドプラズマに対する耐性
の違いを利用してパターニングを行なう方法であるが、
現像液を使用しないため、レジストの膨潤が全く伴わず
、そのため高解度のパターンが得られる利点がある。Dry etching can easily process substrates that are difficult to process by wet etching using an etching solution (for example, silicon nitride), and is a method of patterning that takes advantage of the difference in resistance to side plasma.
Since no developer is used, there is no swelling of the resist at all, which has the advantage that a pattern with high resolution can be obtained.
また、多量の薬品を使用しなくても済むため、生産コス
トの低減化という大きな利点をもっている。Furthermore, since it does not require the use of large amounts of chemicals, it has the great advantage of reducing production costs.
また、レジスト除去工程でも酸素プラズマが用いられる
ため、従来のような有害なハク離液を使用しないでも済
み、公害問題が起らない利点がある。Furthermore, since oxygen plasma is used in the resist removal process, there is no need to use harmful synergic liquid as in the conventional method, which has the advantage of not causing pollution problems.
以上のような観点から、ガスの交換だけで、現像からエ
ツチング、レジストハク離までの連続的なＴｏｔａｌ
ｄｒｙ ｐｒｏｃｅｓｓが達成されようとしている
。From the above point of view, continuous total processing from development to etching to resist stripping can be achieved simply by exchanging gas.
A dry process is about to be achieved.
解決しようとする問題点
酸素プラズマを用いるレジストのドライエツチング法は
上記のような様々な利点をもっているが、次のような欠
点もある。Problems to be Solved Although the resist dry etching method using oxygen plasma has various advantages as described above, it also has the following disadvantages.
（１）エツチング速度が必ずしも速いとはいえない。(1) The etching speed cannot necessarily be said to be fast.
（２〉配線材料としてのＡＩのような下地金属に酸素が
プラズマによって打ち込まれるため、ストレスマイグレ
ーションを起し易い。(2> Oxygen is implanted by plasma into the underlying metal such as AI as a wiring material, which tends to cause stress migration.
（３）デバイス内に構成された金属あるいは合金等によ
っては、電極配線材料が酸化され劣化することがある。(3) Depending on the metal, alloy, etc. configured in the device, the electrode wiring material may be oxidized and deteriorated.
（４）酸素プラズマの発生は、エツチング装置内の電極
や真空計等の付属設備を酸化によって損傷し易い。(4) Generation of oxygen plasma tends to damage attached equipment such as electrodes and vacuum gauges in the etching apparatus by oxidation.
（５）酸素ガスの使用は危険性が大きい。このため水素
ベースの前後工程、例えば、ＣＦ４＋Ｈ２やＣＣｌ４＋
Ｈ２を用いた穴あけエツチング工程との接続に難がある
。(5) The use of oxygen gas is highly dangerous. Therefore, hydrogen-based pre- and post-processes, such as CF4+H2 and CCl4+
There is a problem in connection with the hole etching process using H2.
本発明は、上記のような欠点を除去し、エツチング速度
が速いレジストのドライエツチング法を提供しようとす
るものである。The present invention aims to eliminate the above-mentioned drawbacks and to provide a resist dry etching method that has a high etching rate.
（発明の構成）
問題を解決するための手段
本発明の目的は、酸素の代りに窒素、あるいは５０ｖｏ
Ｉ％以ｆの窒素を主成分とし残りを他のガスを混合せ
しＶた混合ガスを用いることによって達成できる。(Structure of the Invention) Means for Solving the Problem The object of the present invention is to use nitrogen or 50 vol instead of oxygen.
This can be achieved by using a mixed gas in which nitrogen is the main component and the rest is other gases.
他のガスには、水素、酸素、オゾン、ハロゲン化炭素、
アンモニア、ハロゲン化窒素、酸化窒素あるいは不活性
ガス、またはこれらのガスを二種以上混合したガスを用
いることができる。Other gases include hydrogen, oxygen, ozone, halogenated carbons,
Ammonia, halogenated nitrogen, nitrogen oxide, an inert gas, or a mixture of two or more of these gases can be used.
窒素に水素、アンモニアあるいはヒドラジン等を混合し
たガスは、レジストのエツチング時に発生するシアンの
生成を抑制し、また、小分子化効果によって不飽和結合
をもつ分子の再重合を防止することができる。そのため
エツチング速度が速くなる。A gas containing hydrogen, ammonia, hydrazine, or the like mixed with nitrogen can suppress the generation of cyan that occurs during resist etching, and can also prevent repolymerization of molecules with unsaturated bonds by reducing the molecules to small molecules. Therefore, the etching speed becomes faster.
窒素にオゾンあるいは酸化窒素等を混合したガスは、プ
ラズマ中にラジカルが発生し、プラズマ効果が増大し、
そのためエツチング速度が速くなる。A mixture of nitrogen and ozone or nitrogen oxide generates radicals in the plasma, increasing the plasma effect.
Therefore, the etching speed becomes faster.
窒素にハロゲン化炭素を混合したガスは、レジスト中の
微量元素、例えば、シリカ（Ｓｉ０２）を気体化もしく
は蒸気圧を増大させレジストをエツチングした後の無機
物アッシュの残存を低減する。The gas containing nitrogen and halogenated carbon gasifies trace elements such as silica (Si02) in the resist or increases its vapor pressure, thereby reducing the amount of inorganic ash remaining after etching the resist.
窒素に不活性ガスを混合したガスは、プラズマの発生電
圧を下げプラズマ密度を増大し、スパッター効果が大き
くエツチング速度が速くなる。A mixture of nitrogen and an inert gas lowers the plasma generation voltage and increases the plasma density, resulting in a greater sputtering effect and faster etching rate.
上記のように、窒素プラズマあるいは他のガスと混合の
窒素プラズマは、酸素プラズマよりレジストのエツチン
グ速度が速い特徴がある。特にレジスト中に窒素を含む
化学構造のレジストにこの特徴が顕著である。As mentioned above, nitrogen plasma or nitrogen plasma mixed with other gases is characterized by a faster resist etching rate than oxygen plasma. This characteristic is particularly noticeable in resists with chemical structures containing nitrogen.
実施例
シリコンウェーハ上にレジストとしてＲＤ−２００ＯＮ
をスピンコータを使用し０．１ミクロンの厚さで全面に
塗布した。そののちホットプレートを用いて９０°Ｃで
プリベークした。Example RD-200ON as a resist on a silicon wafer
was applied to the entire surface using a spin coater to a thickness of 0.1 micron. Thereafter, it was prebaked at 90°C using a hot plate.
このウェーハを２分割し、その中の１枚を酸素プラズマ
でエツチングを５分間行った。他の１枚を全く同一条件
で窒素プラズマでエツチングを行った。This wafer was divided into two parts, and one of the parts was etched with oxygen plasma for 5 minutes. The other sheet was etched with nitrogen plasma under exactly the same conditions.
この結果、窒素プラズマエツチングではウェーハ上にレ
ジストの残膜は認められなかったが、酸素プラズマエツ
チングではウェーハ上に０．０１ミクロンの厚さの断片
的な残膜が観察された。As a result, no residual resist film was observed on the wafer in nitrogen plasma etching, but fragmentary residual film with a thickness of 0.01 micron was observed on the wafer in oxygen plasma etching.
また、酸素プラズマエツチングではパターンのダレが生
じたが、窒素プラズマエツチングではこのダレが認めら
れず、シャープなパターンが得られた。Furthermore, while oxygen plasma etching caused pattern sagging, nitrogen plasma etching did not show this sagging and a sharp pattern was obtained.
（発明の効果）
本発明によれば、酸素プラズマよりレジストのエツチン
グ速度が速い僑徴がある。特にレジスト中に窒素を含む
化学構造のレジストにこの特徴が顕著である。(Effects of the Invention) According to the present invention, the etching rate of the resist is faster than that of oxygen plasma. This characteristic is particularly noticeable in resists with chemical structures containing nitrogen.
また、酸素プラズマのように酸化されることがないから
、デバイス内の酸化され易い金属の使用にも影響を与え
ず、エツチング装置内の諸付属設備を損傷することがな
い利点がある。Furthermore, since it does not cause oxidation unlike oxygen plasma, it does not affect the use of metals that are easily oxidized in the device, and has the advantage that it does not damage various auxiliary equipment in the etching apparatus.
また、下地金属のストレスマイグレーションを起こしに
くい特徴がある。It also has the characteristic of being less likely to cause stress migration of the underlying metal.
さらに、窒素ガスの使用は酸素ガスより使用上の危険性
が少ない利点がある。Furthermore, the use of nitrogen gas has the advantage of being less dangerous than oxygen gas.
Claims (2)
、窒素、あるいは５０ｖｏｌ％以上の窒素と他のガスと
の混合物によって、レジストをプラズマエッチングする
ことを特徴とするレジストのドライエッチング法。(1) A resist dry etching method characterized by plasma etching the resist using nitrogen or a mixture of 50 vol% or more nitrogen and another gas in lithography during the manufacturing process of semiconductor devices.
素、アンモニア、ハロゲン化窒素、酸化窒素あるいは不
活性ガス、あるいはこれらのガスを二種以上混合したガ
スである、特許請求の範囲第１項記載のレジストのドラ
イエッチング法。(2) The other gas is hydrogen, oxygen, ozone, halogenated carbon, ammonia, halogenated nitrogen, nitrogen oxide, an inert gas, or a mixture of two or more of these gases. The resist dry etching method described in item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3210488A JPH01206624A (en) | 1988-02-15 | 1988-02-15 | Dry etching of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3210488A JPH01206624A (en) | 1988-02-15 | 1988-02-15 | Dry etching of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01206624A true JPH01206624A (en) | 1989-08-18 |
Family
ID=12349594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3210488A Pending JPH01206624A (en) | 1988-02-15 | 1988-02-15 | Dry etching of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01206624A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01280316A (en) * | 1988-05-06 | 1989-11-10 | Sony Corp | Dry etching |
| US5230772A (en) * | 1990-07-27 | 1993-07-27 | Sony Corporation | Dry etching method |
| EP1049142A1 (en) * | 1998-11-13 | 2000-11-02 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| WO2001048804A1 (en) * | 1999-12-29 | 2001-07-05 | Lam Research Corporation | In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning |
| US6429140B1 (en) * | 1996-10-24 | 2002-08-06 | Hyundai Electronics Industries Co., Ltd. | Method of etching of photoresist layer |
| US6465352B1 (en) | 1999-06-11 | 2002-10-15 | Nec Corporation | Method for removing dry-etching residue in a semiconductor device fabricating process |
| WO2003017343A1 (en) * | 2001-08-20 | 2003-02-27 | Tokyo Electron Limited | Dry developing method |
-
1988
- 1988-02-15 JP JP3210488A patent/JPH01206624A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01280316A (en) * | 1988-05-06 | 1989-11-10 | Sony Corp | Dry etching |
| US5230772A (en) * | 1990-07-27 | 1993-07-27 | Sony Corporation | Dry etching method |
| US6429140B1 (en) * | 1996-10-24 | 2002-08-06 | Hyundai Electronics Industries Co., Ltd. | Method of etching of photoresist layer |
| EP1049142A1 (en) * | 1998-11-13 | 2000-11-02 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| EP1049142A4 (en) * | 1998-11-13 | 2003-01-02 | Mitsubishi Electric Corp | Method and device for removing photoresist film |
| US6465352B1 (en) | 1999-06-11 | 2002-10-15 | Nec Corporation | Method for removing dry-etching residue in a semiconductor device fabricating process |
| WO2001048804A1 (en) * | 1999-12-29 | 2001-07-05 | Lam Research Corporation | In situ post-etch photoresist and polymer stripping and dielectric etch chamber cleaning |
| WO2003017343A1 (en) * | 2001-08-20 | 2003-02-27 | Tokyo Electron Limited | Dry developing method |
| US6986851B2 (en) | 2001-08-20 | 2006-01-17 | Tokyo Electron Limited | Dry developing method |
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