AU2003284272A1 - A film stack having a silicon germanium layer and a thin amorphous seed layer - Google Patents
A film stack having a silicon germanium layer and a thin amorphous seed layerInfo
- Publication number
- AU2003284272A1 AU2003284272A1 AU2003284272A AU2003284272A AU2003284272A1 AU 2003284272 A1 AU2003284272 A1 AU 2003284272A1 AU 2003284272 A AU2003284272 A AU 2003284272A AU 2003284272 A AU2003284272 A AU 2003284272A AU 2003284272 A1 AU2003284272 A1 AU 2003284272A1
- Authority
- AU
- Australia
- Prior art keywords
- layer
- silicon germanium
- film stack
- thin amorphous
- amorphous seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27477702A | 2002-10-18 | 2002-10-18 | |
| US10/274,777 | 2002-10-18 | ||
| PCT/US2003/032966 WO2004036636A1 (en) | 2002-10-18 | 2003-10-16 | A film stack having a silicon germanium layer and a thin amorphous seed layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2003284272A1 true AU2003284272A1 (en) | 2004-05-04 |
Family
ID=32106473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2003284272A Abandoned AU2003284272A1 (en) | 2002-10-18 | 2003-10-16 | A film stack having a silicon germanium layer and a thin amorphous seed layer |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2003284272A1 (en) |
| WO (1) | WO2004036636A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060920A1 (en) * | 2004-09-17 | 2006-03-23 | Applied Materials, Inc. | Poly-silicon-germanium gate stack and method for forming the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2765394B1 (en) * | 1997-06-25 | 1999-09-24 | France Telecom | PROCESS FOR OBTAINING A SILICON-GERMANIUM GRID TRANSISTOR |
| FR2775119B1 (en) * | 1998-02-19 | 2000-04-07 | France Telecom | METHOD FOR LIMITING INTERDIFFUSION IN A SEMICONDUCTOR DEVICE WITH A COMPOSITE GRID SI / SI 1-X GE X, O LESS THAN X LESS THAN OR EQUAL TO 1. |
| WO2001041544A2 (en) * | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
| JP2001320045A (en) * | 2000-05-11 | 2001-11-16 | Nec Corp | Manufacturing method for mis type semiconductor device |
| JP2002043566A (en) * | 2000-07-27 | 2002-02-08 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
| KR100425934B1 (en) * | 2000-12-29 | 2004-04-03 | 주식회사 하이닉스반도체 | Method of forming a silicon-germanium film |
| US7026219B2 (en) * | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
-
2003
- 2003-10-16 AU AU2003284272A patent/AU2003284272A1/en not_active Abandoned
- 2003-10-16 WO PCT/US2003/032966 patent/WO2004036636A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004036636A1 (en) | 2004-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2002330339A1 (en) | A thin film transistor array panel | |
| AU2002313948A1 (en) | A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same | |
| AU2002367339A1 (en) | A thin film transistor array panel and a method for manufacturing the same | |
| AU2002246410A1 (en) | A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same | |
| AU2002366860A1 (en) | Method and device for depositing crystalline layers on crystalline substrates | |
| AU2003253896A1 (en) | Three dimensional thin film devices and methods of fabrication | |
| AU2002223735A1 (en) | Method for making a stacked structure comprising a thin film adhering to a target substrate | |
| AU2002361508A1 (en) | Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same | |
| AU2001250973A1 (en) | Method of producing a thin film battery having a protective packaging | |
| AU2383601A (en) | A thin film transistor and a method for manufacturing thereof | |
| AU2003241939A1 (en) | Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method | |
| AU2003251623A1 (en) | Lap sealable film with a peel layer | |
| AU2003262236A1 (en) | Composition for forming silicon film and method for forming silicon film | |
| AU2002321847A1 (en) | A wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same | |
| AU2544900A (en) | Method for fabricating thin film semiconductor devices | |
| AU2002328455A1 (en) | Thin film transistor array panel | |
| AU2003295889A1 (en) | Depositing nanowires on a substrate | |
| AU2002227245A1 (en) | Gan layer on a substrate with an amorphous layer | |
| AU2003281363A1 (en) | Polymer thin film and polymer thin film device using same | |
| AU2003212349A1 (en) | Device for depositing thin layers on a substrate | |
| AU2003212673A1 (en) | Thin film transistor array panel and method manufacturing thereof | |
| AU2003263069A1 (en) | A method for depositing a film on a substrate | |
| AU2003263225A1 (en) | Method of altering the properties of a thin film and substrate implementing said method | |
| AU2001262623A1 (en) | A thin film field effect transistor | |
| AU2003284272A1 (en) | A film stack having a silicon germanium layer and a thin amorphous seed layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |