AU2003211575A1 - Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method - Google Patents

Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method

Info

Publication number
AU2003211575A1
AU2003211575A1 AU2003211575A AU2003211575A AU2003211575A1 AU 2003211575 A1 AU2003211575 A1 AU 2003211575A1 AU 2003211575 A AU2003211575 A AU 2003211575A AU 2003211575 A AU2003211575 A AU 2003211575A AU 2003211575 A1 AU2003211575 A1 AU 2003211575A1
Authority
AU
Australia
Prior art keywords
semiconductor
device manufacturing
chip
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003211575A
Inventor
Kenshi Fukumitsu
Fumitsugu Fukuyo
Naoki Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of AU2003211575A1 publication Critical patent/AU2003211575A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
AU2003211575A 2002-03-12 2003-03-11 Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method Abandoned AU2003211575A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067348 2002-03-12
JP2002-67348 2002-03-12
PCT/JP2003/002866 WO2003076118A1 (en) 2002-03-12 2003-03-11 Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
AU2003211575A1 true AU2003211575A1 (en) 2003-09-22

Family

ID=27800280

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003211575A Abandoned AU2003211575A1 (en) 2002-03-12 2003-03-11 Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method

Country Status (4)

Country Link
JP (1) JP4509573B2 (en)
AU (1) AU2003211575A1 (en)
TW (1) TWI289890B (en)
WO (1) WO2003076118A1 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (en) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
EP2216128B1 (en) 2002-03-12 2016-01-27 Hamamatsu Photonics K.K. Method of cutting object to be processed
ATE534142T1 (en) 2002-03-12 2011-12-15 Hamamatsu Photonics Kk METHOD FOR SEPARATING A SUBSTRATE
TWI520269B (en) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
FR2852250B1 (en) 2003-03-11 2009-07-24 Jean Luc Jouvin PROTECTIVE SHEATH FOR CANNULA, AN INJECTION KIT COMPRISING SUCH ANKLE AND NEEDLE EQUIPPED WITH SUCH ANKLE
US8685838B2 (en) 2003-03-12 2014-04-01 Hamamatsu Photonics K.K. Laser beam machining method
JP4563097B2 (en) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP2005109324A (en) * 2003-10-01 2005-04-21 Tokyo Seimitsu Co Ltd Laser beam dicing device
JP4917257B2 (en) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 Laser processing method
JP4198123B2 (en) 2005-03-22 2008-12-17 浜松ホトニクス株式会社 Laser processing method
JP2007227768A (en) * 2006-02-24 2007-09-06 Denso Corp Method of dicing semiconductor wafer
JP2007235069A (en) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP2007235068A (en) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP4804183B2 (en) * 2006-03-20 2011-11-02 株式会社デンソー Semiconductor substrate dividing method and semiconductor chip manufactured by the dividing method
JP2007287976A (en) * 2006-04-18 2007-11-01 Denso Corp Semiconductor substrate
JP5098229B2 (en) * 2006-06-21 2012-12-12 ソニー株式会社 Surface modification method
JP5164363B2 (en) * 2006-10-27 2013-03-21 株式会社ディスコ Manufacturing method of semiconductor wafer
JP5134928B2 (en) 2007-11-30 2013-01-30 浜松ホトニクス株式会社 Workpiece grinding method
JP5054496B2 (en) 2007-11-30 2012-10-24 浜松ホトニクス株式会社 Processing object cutting method
TW201207913A (en) * 2010-08-13 2012-02-16 Msscorps Co Ltd Two-stage encapsulation removing method for semiconductor device and laser grooving device
JP2014236034A (en) * 2013-05-31 2014-12-15 株式会社ディスコ Method for processing wafer
JP2018206946A (en) * 2017-06-05 2018-12-27 株式会社ディスコ Chip manufacturing method
JP2018206944A (en) * 2017-06-05 2018-12-27 株式会社ディスコ Chip manufacturing method
JP2018206942A (en) * 2017-06-05 2018-12-27 株式会社ディスコ Chip manufacturing method
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2765746B2 (en) * 1990-03-27 1998-06-18 科学技術振興事業団 Fine modification and processing method
JP3024990B2 (en) * 1990-08-31 2000-03-27 日本石英硝子株式会社 Cutting method of quartz glass material
US5211805A (en) * 1990-12-19 1993-05-18 Rangaswamy Srinivasan Cutting of organic solids by continuous wave ultraviolet irradiation
JPH10305420A (en) * 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
JP3352934B2 (en) * 1998-01-21 2002-12-03 理化学研究所 High intensity ultrashort pulse laser processing method and apparatus

Also Published As

Publication number Publication date
TW200307322A (en) 2003-12-01
WO2003076118A1 (en) 2003-09-18
TWI289890B (en) 2007-11-11
JPWO2003076118A1 (en) 2005-06-30
JP4509573B2 (en) 2010-07-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase