AU2002233412A1 - Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process - Google Patents

Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process

Info

Publication number
AU2002233412A1
AU2002233412A1 AU2002233412A AU2002233412A AU2002233412A1 AU 2002233412 A1 AU2002233412 A1 AU 2002233412A1 AU 2002233412 A AU2002233412 A AU 2002233412A AU 2002233412 A AU2002233412 A AU 2002233412A AU 2002233412 A1 AU2002233412 A1 AU 2002233412A1
Authority
AU
Australia
Prior art keywords
reaction chamber
annealing process
vapour deposition
rapid thermal
thermal annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002233412A
Inventor
Rene-Pierre Ducret
Herve Guillon
Franck Laporte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Joint Industrial Processors for Electronics
Original Assignee
Joint Industrial Processors for Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Industrial Processors for Electronics filed Critical Joint Industrial Processors for Electronics
Publication of AU2002233412A1 publication Critical patent/AU2002233412A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002233412A 2002-01-15 2002-01-15 Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process Abandoned AU2002233412A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FR2002/000141 WO2003060185A1 (en) 2002-01-15 2002-01-15 Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process

Publications (1)

Publication Number Publication Date
AU2002233412A1 true AU2002233412A1 (en) 2003-07-30

Family

ID=8871185

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002233412A Abandoned AU2002233412A1 (en) 2002-01-15 2002-01-15 Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process

Country Status (2)

Country Link
AU (1) AU2002233412A1 (en)
WO (1) WO2003060185A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
JP3510993B2 (en) * 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit

Also Published As

Publication number Publication date
WO2003060185A1 (en) 2003-07-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase