AU2002223088A1 - Chemical plasma cathode - Google Patents
Chemical plasma cathodeInfo
- Publication number
- AU2002223088A1 AU2002223088A1 AU2002223088A AU2308802A AU2002223088A1 AU 2002223088 A1 AU2002223088 A1 AU 2002223088A1 AU 2002223088 A AU2002223088 A AU 2002223088A AU 2308802 A AU2308802 A AU 2308802A AU 2002223088 A1 AU2002223088 A1 AU 2002223088A1
- Authority
- AU
- Australia
- Prior art keywords
- chemical plasma
- plasma cathode
- cathode
- chemical
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/732,064 US6503366B2 (en) | 2000-12-07 | 2000-12-07 | Chemical plasma cathode |
US09/732,064 | 2000-12-07 | ||
PCT/GB2001/005219 WO2002047445A2 (en) | 2000-12-07 | 2001-11-27 | Chemical plasma cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002223088A1 true AU2002223088A1 (en) | 2002-06-18 |
Family
ID=24942043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002223088A Abandoned AU2002223088A1 (en) | 2000-12-07 | 2001-11-27 | Chemical plasma cathode |
Country Status (3)
Country | Link |
---|---|
US (2) | US6503366B2 (en) |
AU (1) | AU2002223088A1 (en) |
WO (1) | WO2002047445A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503366B2 (en) | 2000-12-07 | 2003-01-07 | Axcelis Technologies, Inc. | Chemical plasma cathode |
US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
US20080190558A1 (en) * | 2002-04-26 | 2008-08-14 | Accretech Usa, Inc. | Wafer processing apparatus and method |
US20080011332A1 (en) * | 2002-04-26 | 2008-01-17 | Accretech Usa, Inc. | Method and apparatus for cleaning a wafer substrate |
US20080017316A1 (en) * | 2002-04-26 | 2008-01-24 | Accretech Usa, Inc. | Clean ignition system for wafer substrate processing |
US20040045578A1 (en) * | 2002-05-03 | 2004-03-11 | Jackson David P. | Method and apparatus for selective treatment of a precision substrate surface |
KR100464856B1 (en) * | 2002-11-07 | 2005-01-05 | 삼성전자주식회사 | Method for etching a surface of workpiece and a backside of silicon substrate |
WO2006138727A2 (en) * | 2005-06-17 | 2006-12-28 | The Regents Of The University Of Michigan | Apparatus and method of producing net-shape components from alloy sheets |
WO2010068442A1 (en) * | 2008-11-25 | 2010-06-17 | The Procter & Gamble Company | Improved cleaning oral care compositions |
DE102009010497A1 (en) * | 2008-12-19 | 2010-08-05 | J-Fiber Gmbh | Multi-nozzle tubular plasma deposition burner for the production of preforms as semi-finished products for optical fibers |
US20100203287A1 (en) * | 2009-02-10 | 2010-08-12 | Ngimat Co. | Hypertransparent Nanostructured Superhydrophobic and Surface Modification Coatings |
US8826857B2 (en) * | 2011-11-21 | 2014-09-09 | Lam Research Corporation | Plasma processing assemblies including hinge assemblies |
DE102014219275A1 (en) * | 2014-09-24 | 2016-03-24 | Siemens Aktiengesellschaft | Ignition of flames of an electropositive metal by plasmatization of the reaction gas |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778131A (en) * | 1980-11-04 | 1982-05-15 | Seiko Epson Corp | Manufacture of amorphous semiconductor fil, |
JPS63199871A (en) * | 1987-02-12 | 1988-08-18 | Sumitomo Electric Ind Ltd | Method for synthesizing high hardness boron nitride |
US5330578A (en) | 1991-03-12 | 1994-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
CA2077773A1 (en) * | 1991-10-25 | 1993-04-26 | Thomas R. Anthony | Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond |
JP3276445B2 (en) * | 1993-03-26 | 2002-04-22 | 三菱重工業株式会社 | Plasma CVD equipment |
US5888591A (en) * | 1996-05-06 | 1999-03-30 | Massachusetts Institute Of Technology | Chemical vapor deposition of fluorocarbon polymer thin films |
DE19716236C2 (en) | 1997-04-18 | 2002-03-07 | Deutsch Zentr Luft & Raumfahrt | Plasma torch device |
US6368665B1 (en) * | 1998-04-29 | 2002-04-09 | Microcoating Technologies, Inc. | Apparatus and process for controlled atmosphere chemical vapor deposition |
US6503366B2 (en) | 2000-12-07 | 2003-01-07 | Axcelis Technologies, Inc. | Chemical plasma cathode |
-
2000
- 2000-12-07 US US09/732,064 patent/US6503366B2/en not_active Expired - Fee Related
-
2001
- 2001-11-27 AU AU2002223088A patent/AU2002223088A1/en not_active Abandoned
- 2001-11-27 WO PCT/GB2001/005219 patent/WO2002047445A2/en not_active Application Discontinuation
-
2003
- 2003-01-03 US US10/336,270 patent/US6673197B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030102085A1 (en) | 2003-06-05 |
US20020069828A1 (en) | 2002-06-13 |
US6673197B2 (en) | 2004-01-06 |
WO2002047445A3 (en) | 2002-08-15 |
US6503366B2 (en) | 2003-01-07 |
WO2002047445A2 (en) | 2002-06-13 |
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