AU2002218517A1 - Cerium-based abrasive and production process thereof - Google Patents
Cerium-based abrasive and production process thereofInfo
- Publication number
- AU2002218517A1 AU2002218517A1 AU2002218517A AU1851702A AU2002218517A1 AU 2002218517 A1 AU2002218517 A1 AU 2002218517A1 AU 2002218517 A AU2002218517 A AU 2002218517A AU 1851702 A AU1851702 A AU 1851702A AU 2002218517 A1 AU2002218517 A1 AU 2002218517A1
- Authority
- AU
- Australia
- Prior art keywords
- rare earth
- cerium
- mixed
- production process
- yield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/253—Halides
- C01F17/265—Fluorides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Abstract
A mixed light rare earth compound which has been obtained by chemically removing medium-to-heavy rare earth elements, Nd and impurities other than rare earth elements from an ore containing rare earth elements is fired at 500 to 1100° C. to yield a mixed rare earth oxide. A cerium-based rare earth oxy-fluoride is added to the mixed rare earth oxide to obtain a mixture. The mixture is subjected to wet-pulverization, drying, firing, disintegration and classification to thereby yield a cerium-containing abrasive.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-365600 | 2000-11-30 | ||
JP2000365600 | 2000-11-30 | ||
US26984301P | 2001-02-21 | 2001-02-21 | |
US60/269,843 | 2001-02-21 | ||
PCT/JP2001/010500 WO2002044300A2 (en) | 2000-11-30 | 2001-11-30 | Cerium-based abrasive and production process thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002218517A1 true AU2002218517A1 (en) | 2002-06-11 |
Family
ID=26604984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002218517A Abandoned AU2002218517A1 (en) | 2000-11-30 | 2001-11-30 | Cerium-based abrasive and production process thereof |
Country Status (7)
Country | Link |
---|---|
US (2) | US6986798B2 (en) |
EP (1) | EP1346003B1 (en) |
KR (1) | KR100647023B1 (en) |
AT (1) | ATE449827T1 (en) |
AU (1) | AU2002218517A1 (en) |
DE (1) | DE60140621D1 (en) |
WO (1) | WO2002044300A2 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY126099A (en) * | 2000-09-20 | 2006-09-29 | Mitsui Mining & Smelting Co | Cerium-based abrasive, method of examining quality thereof, and method of producing the same |
JP4002740B2 (en) * | 2001-05-29 | 2007-11-07 | 三井金属鉱業株式会社 | Method for producing cerium-based abrasive |
JP4236857B2 (en) * | 2002-03-22 | 2009-03-11 | 三井金属鉱業株式会社 | Cerium-based abrasive and method for producing the same |
US20100187178A1 (en) * | 2003-01-29 | 2010-07-29 | Molycorp Minerals, Llc | Process for removing and sequestering contaminants from aqueous streams |
US6863825B2 (en) * | 2003-01-29 | 2005-03-08 | Union Oil Company Of California | Process for removing arsenic from aqueous streams |
JP3875668B2 (en) * | 2003-08-26 | 2007-01-31 | 三井金属鉱業株式会社 | Cerium-based abrasive containing fluorine and method for producing the same |
KR100638317B1 (en) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | Slurry for polishing and mehod of manufacturing the same and method of polishing substrates |
WO2006025614A1 (en) * | 2004-09-03 | 2006-03-09 | Showa Denko K.K. | Mixed rare earth oxide, mixed rare earth fluoride, cerium-based abrasive using the materials and production processes thereof |
KR20060066799A (en) * | 2004-12-14 | 2006-06-19 | 한국기초과학지원연구원 | Simultaneous measurement of the integrated x-ray reflectivity for different orders of reflections by using continuous x-ray and apparatus for measurement thereof |
TWI338036B (en) * | 2005-04-04 | 2011-03-01 | Showa Denko Kk | Cerium-based oxide abrasive, and producing method and use thereof |
US8066874B2 (en) * | 2006-12-28 | 2011-11-29 | Molycorp Minerals, Llc | Apparatus for treating a flow of an aqueous solution containing arsenic |
US8252087B2 (en) * | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
US20090107919A1 (en) * | 2007-10-31 | 2009-04-30 | Chevron U.S.A. Inc. | Apparatus and process for treating an aqueous solution containing chemical contaminants |
TW201038510A (en) * | 2009-03-16 | 2010-11-01 | Molycorp Minerals Llc | Porous and durable ceramic filter monolith coated with a rare earth for removing contaminates from water |
WO2010118368A1 (en) * | 2009-04-09 | 2010-10-14 | Molycorp Minerals Llc | Use of a rare earth for the removal of antimony and bismuth |
US8727833B2 (en) * | 2009-04-15 | 2014-05-20 | Rhodia (China) Co., Ltd. | Cerium-based particle composition and the preparation thereof |
EP2499679A4 (en) * | 2009-11-09 | 2014-01-01 | Molycorp Minerals Llc | Rare earth removal of colorants |
US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
CN102585707B (en) * | 2012-02-28 | 2014-01-29 | 上海华明高纳稀土新材料有限公司 | Preparation method of cerium-based mixed rare earth polishing powder |
JP2015120844A (en) * | 2013-12-24 | 2015-07-02 | 旭硝子株式会社 | Polishing agent production method, polishing method, and semiconductor integrated circuit device production method |
AU2015226889B2 (en) | 2014-03-07 | 2019-09-19 | Secure Natural Resources Llc | Cerium (IV) oxide with exceptional arsenic removal properties |
CN104194646B (en) * | 2014-09-02 | 2016-09-28 | 包头市金蒙研磨材料有限责任公司 | A kind of rare earth cerio rubbing paste production method |
KR102463863B1 (en) | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | Polishing compositions and methods of manufacturing semiconductor devices using the same |
CN113772713A (en) * | 2021-08-26 | 2021-12-10 | 北京工业大学 | Roasting preparation method of rare earth fluoride lanthanum cerium polishing powder |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2472601A1 (en) * | 1979-12-27 | 1981-07-03 | Rhone Poulenc Ind | PROCESS FOR PRODUCING CERIUM POLISHING COMPOSITIONS |
SU1249045A1 (en) * | 1984-11-02 | 1986-08-07 | Предприятие П/Я Р-6670 | Method of producing suspension for polishing optical glass |
US5258167A (en) * | 1990-06-01 | 1993-11-02 | Lion Corporation | Extractant for rare earth metal and method for extracting the same |
RU2001934C1 (en) * | 1992-02-10 | 1993-10-30 | Научно-производственный кооператив "Экорунд" | Suspension for optical glass polishing |
KR950013315B1 (en) * | 1993-05-07 | 1995-11-02 | 주식회사엘지금속 | Retreatment method for sludge containing fluorine |
JPH0848969A (en) * | 1994-08-09 | 1996-02-20 | Mitsui Mining & Smelting Co Ltd | Abrasive |
JPH09183966A (en) | 1995-12-29 | 1997-07-15 | Seimi Chem Co Ltd | Production of cerium abrasive |
JP3602670B2 (en) * | 1996-12-25 | 2004-12-15 | セイミケミカル株式会社 | Manufacturing method of cerium-based abrasive |
JP3600725B2 (en) * | 1998-03-24 | 2004-12-15 | 三井金属鉱業株式会社 | Manufacturing method of cerium-based abrasive |
JP3480323B2 (en) | 1998-06-30 | 2003-12-15 | 日立化成工業株式会社 | Cerium oxide abrasive, substrate polishing method, and semiconductor device |
JP2000026840A (en) | 1998-07-09 | 2000-01-25 | Toray Ind Inc | Abrasive |
RU2139949C1 (en) * | 1998-07-10 | 1999-10-20 | Всероссийский научно-исследовательский институт химической технологии | Method of preparing cerium oxide |
JP2000109813A (en) | 1998-10-08 | 2000-04-18 | Hitachi Chem Co Ltd | Polishing agent for cmp and polishing of substrate |
JP2000303060A (en) * | 1999-04-19 | 2000-10-31 | Seimi Chem Co Ltd | Abrasive material for semiconductor containing fluorocompound abrasive grains |
JP3392398B2 (en) | 2000-09-20 | 2003-03-31 | 三井金属鉱業株式会社 | Cerium-based abrasive, its quality inspection method and manufacturing method |
MY126099A (en) | 2000-09-20 | 2006-09-29 | Mitsui Mining & Smelting Co | Cerium-based abrasive, method of examining quality thereof, and method of producing the same |
-
2001
- 2001-11-30 AU AU2002218517A patent/AU2002218517A1/en not_active Abandoned
- 2001-11-30 DE DE60140621T patent/DE60140621D1/en not_active Expired - Lifetime
- 2001-11-30 AT AT01998610T patent/ATE449827T1/en not_active IP Right Cessation
- 2001-11-30 US US10/433,046 patent/US6986798B2/en not_active Expired - Lifetime
- 2001-11-30 KR KR1020037007227A patent/KR100647023B1/en active IP Right Grant
- 2001-11-30 WO PCT/JP2001/010500 patent/WO2002044300A2/en active Search and Examination
- 2001-11-30 EP EP01998610A patent/EP1346003B1/en not_active Expired - Lifetime
-
2005
- 2005-08-16 US US11/204,179 patent/US7470297B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2002044300A2 (en) | 2002-06-06 |
US20040043613A1 (en) | 2004-03-04 |
US6986798B2 (en) | 2006-01-17 |
EP1346003A2 (en) | 2003-09-24 |
ATE449827T1 (en) | 2009-12-15 |
EP1346003B1 (en) | 2009-11-25 |
US20050271570A1 (en) | 2005-12-08 |
US7470297B2 (en) | 2008-12-30 |
DE60140621D1 (en) | 2010-01-07 |
KR20040062417A (en) | 2004-07-07 |
KR100647023B1 (en) | 2006-11-17 |
WO2002044300A3 (en) | 2002-08-29 |
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