AU2002218248A1 - Cvd reactor with graphite-foam insulated, tubular susceptor - Google Patents

Cvd reactor with graphite-foam insulated, tubular susceptor

Info

Publication number
AU2002218248A1
AU2002218248A1 AU2002218248A AU1824802A AU2002218248A1 AU 2002218248 A1 AU2002218248 A1 AU 2002218248A1 AU 2002218248 A AU2002218248 A AU 2002218248A AU 1824802 A AU1824802 A AU 1824802A AU 2002218248 A1 AU2002218248 A1 AU 2002218248A1
Authority
AU
Australia
Prior art keywords
graphite
cvd reactor
foam insulated
tubular susceptor
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002218248A
Inventor
Rune Berge
Johannes Kappeler
Frank Wischmeyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002218248A1 publication Critical patent/AU2002218248A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
AU2002218248A 2000-11-07 2001-10-18 Cvd reactor with graphite-foam insulated, tubular susceptor Abandoned AU2002218248A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10055033A DE10055033A1 (en) 2000-11-07 2000-11-07 Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar
DE10055033 2000-11-07
PCT/EP2001/012067 WO2002038838A1 (en) 2000-11-07 2001-10-18 Cvd reactor with graphite-foam insulated, tubular susceptor

Publications (1)

Publication Number Publication Date
AU2002218248A1 true AU2002218248A1 (en) 2002-05-21

Family

ID=7662352

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002218248A Abandoned AU2002218248A1 (en) 2000-11-07 2001-10-18 Cvd reactor with graphite-foam insulated, tubular susceptor

Country Status (8)

Country Link
US (1) US7048802B2 (en)
EP (1) EP1334222B1 (en)
JP (1) JP4028378B2 (en)
KR (1) KR100827500B1 (en)
AU (1) AU2002218248A1 (en)
DE (2) DE10055033A1 (en)
TW (1) TW546403B (en)
WO (1) WO2002038838A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10055033A1 (en) 2000-11-07 2002-05-08 Aixtron Ag Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar
DE10132448A1 (en) * 2001-07-04 2003-01-23 Aixtron Ag CVD device with different temperature controlled substrate holder
US20100037827A1 (en) * 2001-07-04 2010-02-18 Johannes Kaeppeler CVD Device with Substrate Holder with Differential Temperature Control
ATE423226T1 (en) * 2002-12-10 2009-03-15 E T C Epitaxial Technology Ct SUSCEPTOR SYSTEM
DE60237240D1 (en) * 2002-12-10 2010-09-16 E T C Epitaxial Technology Ct susceptor system
ATE501286T1 (en) * 2004-06-09 2011-03-15 E T C Epitaxial Technology Ct Srl HOLDER SYSTEM FOR TREATMENT APPARATUS
DE102004062553A1 (en) * 2004-12-24 2006-07-06 Aixtron Ag CVD reactor with RF heated process chamber
US8272431B2 (en) * 2005-12-27 2012-09-25 Caterpillar Inc. Heat exchanger using graphite foam
ITMI20052498A1 (en) * 2005-12-28 2007-06-29 Lpe Spa REACTION CHAMBER AT DIFFERENTIATED TEMPERATURE
JP5051875B2 (en) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP5202839B2 (en) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 Film forming apparatus and film forming method
WO2008100917A1 (en) * 2007-02-16 2008-08-21 Caracal, Inc. Epitaxial growth system for fast heating and cooling
FI120450B (en) * 2007-03-21 2009-10-30 Beneq Oy Apparatus for producing nanotubes
US8069912B2 (en) 2007-09-28 2011-12-06 Caterpillar Inc. Heat exchanger with conduit surrounded by metal foam
CN102560434B (en) * 2010-12-13 2014-10-22 北京北方微电子基地设备工艺研究中心有限责任公司 Metal organic compound chemical vapor deposition equipment
KR20130107001A (en) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 Apparatus for deposition
CN112962140A (en) * 2021-02-01 2021-06-15 中国电子科技集团公司第四十八研究所 Silicon carbide epitaxial furnace reaction chamber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
JPS60137893A (en) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd Graphite crucible for pulling semiconductor single crystal
JPH01224570A (en) * 1988-03-03 1989-09-07 Oowada Carbon Kogyo Kk Press cylinder of high temperature high pressure pressing machine
JP2935474B2 (en) * 1989-05-08 1999-08-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Apparatus and method for processing flat substrates
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
SE9503426D0 (en) 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
WO1999043874A1 (en) * 1998-02-24 1999-09-02 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
DE10055033A1 (en) 2000-11-07 2002-05-08 Aixtron Ag Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar

Also Published As

Publication number Publication date
US20040020436A1 (en) 2004-02-05
WO2002038838A1 (en) 2002-05-16
EP1334222B1 (en) 2004-05-19
DE50102357D1 (en) 2004-06-24
TW546403B (en) 2003-08-11
KR100827500B1 (en) 2008-05-06
JP4028378B2 (en) 2007-12-26
DE10055033A1 (en) 2002-05-08
EP1334222A1 (en) 2003-08-13
US7048802B2 (en) 2006-05-23
KR20030059201A (en) 2003-07-07
JP2004513524A (en) 2004-04-30

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