AU2001271166A1 - Detrimental latch-up avoidance - Google Patents

Detrimental latch-up avoidance

Info

Publication number
AU2001271166A1
AU2001271166A1 AU2001271166A AU7116601A AU2001271166A1 AU 2001271166 A1 AU2001271166 A1 AU 2001271166A1 AU 2001271166 A AU2001271166 A AU 2001271166A AU 7116601 A AU7116601 A AU 7116601A AU 2001271166 A1 AU2001271166 A1 AU 2001271166A1
Authority
AU
Australia
Prior art keywords
avoidance
detrimental
latch
detrimental latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
AU2001271166A
Inventor
Morten Skov Hansen
Erik Plesner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2001271166A1 publication Critical patent/AU2001271166A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
AU2001271166A 2001-07-05 2001-07-05 Detrimental latch-up avoidance Withdrawn AU2001271166A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SE2001/001556 WO2002000004A2 (en) 2001-07-05 2001-07-05 Detrimental latch-up avoidans in digital circuits

Publications (1)

Publication Number Publication Date
AU2001271166A1 true AU2001271166A1 (en) 2002-01-08

Family

ID=20283974

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001271166A Withdrawn AU2001271166A1 (en) 2001-07-05 2001-07-05 Detrimental latch-up avoidance

Country Status (2)

Country Link
AU (1) AU2001271166A1 (en)
WO (1) WO2002000004A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JO2787B1 (en) 2005-04-27 2014-03-15 امجين إنك, Substituted Amid derivatives & methods of use
EP1811568B1 (en) * 2006-01-24 2010-03-17 Stmicroelectronics Sa Device for protecting an integrated circuit against latch-up phenomena

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353105A (en) * 1980-12-08 1982-10-05 National Semiconductor Corporation CMOS Latch-up protection circuit
JPS60257620A (en) * 1984-06-04 1985-12-19 Hitachi Ltd Cmos integrated circuit device
JPS61269417A (en) * 1985-05-23 1986-11-28 Nec Corp Complementary mos semiconductor integrated circuit
JPS61270917A (en) * 1985-05-27 1986-12-01 Toshiba Corp Semiconductor integrated circuit device
JPH0831789B2 (en) * 1985-09-04 1996-03-27 沖電気工業株式会社 Output circuit
JPH08181598A (en) * 1994-12-27 1996-07-12 Oki Electric Ind Co Ltd Semiconductor device
US5942932A (en) * 1997-08-26 1999-08-24 Nanoamp Solutions, Inc. Circuit and method for preventing latch-up in a CMOS semiconductor device

Also Published As

Publication number Publication date
WO2002000004A2 (en) 2002-01-03
WO2002000004A3 (en) 2002-05-16

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