AU2001253575A1 - Process for fabricating thin film transistors - Google Patents
Process for fabricating thin film transistorsInfo
- Publication number
- AU2001253575A1 AU2001253575A1 AU2001253575A AU5357501A AU2001253575A1 AU 2001253575 A1 AU2001253575 A1 AU 2001253575A1 AU 2001253575 A AU2001253575 A AU 2001253575A AU 5357501 A AU5357501 A AU 5357501A AU 2001253575 A1 AU2001253575 A1 AU 2001253575A1
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- thin film
- film transistors
- fabricating thin
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 229920000265 Polyparaphenylene Polymers 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- -1 polyphenylene Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Abstract
Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19773100P | 2000-04-18 | 2000-04-18 | |
US60197731 | 2000-04-18 | ||
PCT/US2001/012429 WO2001080287A2 (en) | 2000-04-18 | 2001-04-17 | Process for fabricating thin film transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001253575A1 true AU2001253575A1 (en) | 2001-10-30 |
Family
ID=22730530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001253575A Abandoned AU2001253575A1 (en) | 2000-04-18 | 2001-04-17 | Process for fabricating thin film transistors |
Country Status (9)
Country | Link |
---|---|
US (2) | US6825068B2 (en) |
EP (1) | EP1275156B1 (en) |
JP (1) | JP2003531487A (en) |
KR (1) | KR100767233B1 (en) |
CN (1) | CN1237623C (en) |
AT (1) | ATE438927T1 (en) |
AU (1) | AU2001253575A1 (en) |
DE (1) | DE60139463D1 (en) |
WO (1) | WO2001080287A2 (en) |
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-
2001
- 2001-04-17 AU AU2001253575A patent/AU2001253575A1/en not_active Abandoned
- 2001-04-17 DE DE60139463T patent/DE60139463D1/en not_active Expired - Lifetime
- 2001-04-17 WO PCT/US2001/012429 patent/WO2001080287A2/en active Application Filing
- 2001-04-17 CN CNB018081681A patent/CN1237623C/en not_active Expired - Fee Related
- 2001-04-17 JP JP2001577586A patent/JP2003531487A/en not_active Ceased
- 2001-04-17 US US09/836,884 patent/US6825068B2/en not_active Expired - Lifetime
- 2001-04-17 AT AT01927094T patent/ATE438927T1/en not_active IP Right Cessation
- 2001-04-17 KR KR1020027013880A patent/KR100767233B1/en active IP Right Grant
- 2001-04-17 EP EP01927094A patent/EP1275156B1/en not_active Expired - Lifetime
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2004
- 2004-08-17 US US10/919,657 patent/US7365394B2/en not_active Expired - Fee Related
Also Published As
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KR20020089479A (en) | 2002-11-29 |
JP2003531487A (en) | 2003-10-21 |
US6825068B2 (en) | 2004-11-30 |
CN1237623C (en) | 2006-01-18 |
US7365394B2 (en) | 2008-04-29 |
EP1275156A2 (en) | 2003-01-15 |
EP1275156B1 (en) | 2009-08-05 |
WO2001080287A2 (en) | 2001-10-25 |
CN1441967A (en) | 2003-09-10 |
WO2001080287A3 (en) | 2002-05-23 |
US20020019081A1 (en) | 2002-02-14 |
ATE438927T1 (en) | 2009-08-15 |
DE60139463D1 (en) | 2009-09-17 |
KR100767233B1 (en) | 2007-10-17 |
US20050067656A1 (en) | 2005-03-31 |
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