AU2001218942A1 - Cleaning method and etching method - Google Patents

Cleaning method and etching method

Info

Publication number
AU2001218942A1
AU2001218942A1 AU2001218942A AU1894201A AU2001218942A1 AU 2001218942 A1 AU2001218942 A1 AU 2001218942A1 AU 2001218942 A AU2001218942 A AU 2001218942A AU 1894201 A AU1894201 A AU 1894201A AU 2001218942 A1 AU2001218942 A1 AU 2001218942A1
Authority
AU
Australia
Prior art keywords
cleaning
etching
etching method
cleaning method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001218942A
Inventor
Tokiko Kanayama
Hiroaki Kouno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Publication of AU2001218942A1 publication Critical patent/AU2001218942A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • A—HUMAN NECESSITIES
    • A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
    • A23K—FODDER
    • A23K10/00—Animal feeding-stuffs
    • A23K10/30—Animal feeding-stuffs from material of plant origin, e.g. roots, seeds or hay; from material of fungal origin, e.g. mushrooms
    • A23K10/37—Animal feeding-stuffs from material of plant origin, e.g. roots, seeds or hay; from material of fungal origin, e.g. mushrooms from waste material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D11/00—Solvent extraction
    • B01D11/04—Solvent extraction of solutions which are liquid
    • B01D11/0488—Flow sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/80—Food processing, e.g. use of renewable energies or variable speed drives in handling, conveying or stacking
    • Y02P60/87—Re-use of by-products of food processing for fodder production

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Biotechnology (AREA)
  • Botany (AREA)
  • Molecular Biology (AREA)
  • Mycology (AREA)
  • Physiology (AREA)
  • Animal Husbandry (AREA)
  • Zoology (AREA)
  • Plasma & Fusion (AREA)
  • Food Science & Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AU2001218942A 2000-12-18 2000-12-18 Cleaning method and etching method Abandoned AU2001218942A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/008974 WO2002050883A1 (en) 2000-12-18 2000-12-18 Cleaning method and etching method

Publications (1)

Publication Number Publication Date
AU2001218942A1 true AU2001218942A1 (en) 2002-07-01

Family

ID=11736805

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001218942A Abandoned AU2001218942A1 (en) 2000-12-18 2000-12-18 Cleaning method and etching method
AU2002222670A Abandoned AU2002222670A1 (en) 2000-12-18 2001-12-17 Cleaning and etching methods and their apparatuses

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2002222670A Abandoned AU2002222670A1 (en) 2000-12-18 2001-12-17 Cleaning and etching methods and their apparatuses

Country Status (6)

Country Link
US (3) US6939409B2 (en)
JP (2) JPWO2002050883A1 (en)
CN (1) CN1461493A (en)
AU (2) AU2001218942A1 (en)
TW (1) TW571340B (en)
WO (2) WO2002050883A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2002050883A1 (en) * 2000-12-18 2004-04-22 住友精密工業株式会社 Cleaning and etching methods
GB0413554D0 (en) * 2004-06-17 2004-07-21 Point 35 Microstructures Ltd Improved method and apparartus for the etching of microstructures
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20080191153A1 (en) * 2005-03-16 2008-08-14 Advanced Technology Materials, Inc. System For Delivery Of Reagents From Solid Sources Thereof
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
US8278222B2 (en) * 2005-11-22 2012-10-02 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
US20070117396A1 (en) * 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US20070129273A1 (en) * 2005-12-07 2007-06-07 Clark Philip G In situ fluoride ion-generating compositions and uses thereof
US7396770B2 (en) * 2006-01-10 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Post-parting etch to smooth silicon sliders
CN101473073B (en) * 2006-04-26 2012-08-08 高级技术材料公司 Cleaning of semiconductor processing systems
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
US8491752B2 (en) 2006-12-15 2013-07-23 Tokyo Electron Limited Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
JP4937724B2 (en) * 2006-12-15 2012-05-23 東京エレクトロン株式会社 Substrate mounting table, substrate mounting table manufacturing method, substrate processing apparatus, fluid supply mechanism
TWI619153B (en) 2008-02-11 2018-03-21 恩特葛瑞斯股份有限公司 Ion source cleaning in semiconductor processing systems
JP2011018885A (en) * 2009-06-12 2011-01-27 Seiko Epson Corp Method of manufacturing patterned film forming member, patterned film forming member, electro-optical device, electronic apparatus
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
GB2473851C (en) * 2009-09-25 2013-08-21 Memsstar Ltd Improved selectivity in a xenon difluoride etch process
CN108565198A (en) 2012-02-14 2018-09-21 恩特格里斯公司 Carbon dopant gas for improving injected beam and source performance life and coflow
US10079150B2 (en) 2015-07-23 2018-09-18 Spts Technologies Limited Method and apparatus for dry gas phase chemically etching a structure
US10651233B2 (en) * 2018-08-21 2020-05-12 Northrop Grumman Systems Corporation Method for forming superconducting structures
JP7224268B2 (en) * 2019-10-16 2023-02-17 三菱電機株式会社 Manufacturing method of optical semiconductor device

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
JP2724165B2 (en) 1987-08-28 1998-03-09 株式会社東芝 Method and apparatus for removing organic compound film
EP0305946B1 (en) * 1987-08-28 1996-10-30 Kabushiki Kaisha Toshiba Method for removing organic and/or inorganic films by dry plasma ashing
JP2890432B2 (en) * 1989-01-10 1999-05-17 富士通株式会社 Ashing method of organic matter
JPH0496222A (en) 1990-08-03 1992-03-27 Fujitsu Ltd Manufacture of semiconductor device
US5182646A (en) 1990-09-24 1993-01-26 Thomson Consumer Electronics, Inc. Linkable scan lists for a television receiver
JPH07122539A (en) 1993-10-25 1995-05-12 Hitachi Ltd Surface treatment
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
JPH0864559A (en) * 1994-06-14 1996-03-08 Fsi Internatl Inc Method of deleting unnecessary substance from substrate surface
JPH08274072A (en) 1995-03-31 1996-10-18 Toshiba Corp Surface treatment device and surface treatment
DE19713090B4 (en) * 1996-03-28 2004-06-17 Kabushiki Kaisha Toshiba, Kawasaki Process and apparatus for etching silicon materials
JP3417239B2 (en) * 1997-01-17 2003-06-16 三菱電機株式会社 Manufacturing method of microelectromechanical device
JP3337638B2 (en) * 1997-03-31 2002-10-21 キヤノン株式会社 Method for producing fluoride crystal and method for producing optical component
US6042738A (en) 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
GB9709659D0 (en) * 1997-05-13 1997-07-02 Surface Tech Sys Ltd Method and apparatus for etching a workpiece
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
US6528397B1 (en) * 1997-12-17 2003-03-04 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
JP2000164559A (en) * 1998-09-22 2000-06-16 Seiko Epson Corp Selective etching method and device for silicon substance
US6482748B1 (en) * 1999-09-03 2002-11-19 Taiwan Semiconductor Manufacturing Company Poly gate silicide inspection by back end etching
JP2001102345A (en) 1999-09-27 2001-04-13 Jun Kikuchi Method and device for treating surface
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
DE10028662A1 (en) * 2000-06-09 2001-12-13 Nokia Mobile Phones Ltd Driving to intermediate destinations, involves navigation device automatically selecting and steering to intermediate destination category that can be reached at time specified to device
US6736987B1 (en) * 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
JPWO2002050883A1 (en) * 2000-12-18 2004-04-22 住友精密工業株式会社 Cleaning and etching methods
US6936183B2 (en) * 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures

Also Published As

Publication number Publication date
US6913653B2 (en) 2005-07-05
US20050109733A1 (en) 2005-05-26
JP4036751B2 (en) 2008-01-23
US20040108296A1 (en) 2004-06-10
WO2002050883A1 (en) 2002-06-27
US6939409B2 (en) 2005-09-06
JPWO2002050884A1 (en) 2004-04-22
CN1461493A (en) 2003-12-10
US20040069318A1 (en) 2004-04-15
TW571340B (en) 2004-01-11
WO2002050884A1 (en) 2002-06-27
JPWO2002050883A1 (en) 2004-04-22
AU2002222670A1 (en) 2002-07-01

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