ATE59116T1 - Halbleiteranordnung mit mehreren uebergaengen. - Google Patents

Halbleiteranordnung mit mehreren uebergaengen.

Info

Publication number
ATE59116T1
ATE59116T1 AT85112318T AT85112318T ATE59116T1 AT E59116 T1 ATE59116 T1 AT E59116T1 AT 85112318 T AT85112318 T AT 85112318T AT 85112318 T AT85112318 T AT 85112318T AT E59116 T1 ATE59116 T1 AT E59116T1
Authority
AT
Austria
Prior art keywords
layer
junction semiconductor
multiple junction
semiconductor arrangements
diffusion
Prior art date
Application number
AT85112318T
Other languages
English (en)
Inventor
Jun Takada
Minori Yamaguchi
Yoshihisa Tawada
Original Assignee
Kanegafuchi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Ind filed Critical Kanegafuchi Chemical Ind
Application granted granted Critical
Publication of ATE59116T1 publication Critical patent/ATE59116T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT85112318T 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren uebergaengen. ATE59116T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59213944A JPS6191974A (ja) 1984-10-11 1984-10-11 耐熱性マルチジヤンクシヨン型半導体素子
EP85112318A EP0177864B1 (de) 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren Übergängen

Publications (1)

Publication Number Publication Date
ATE59116T1 true ATE59116T1 (de) 1990-12-15

Family

ID=16647630

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85112318T ATE59116T1 (de) 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren uebergaengen.

Country Status (10)

Country Link
US (1) US4907052A (de)
EP (1) EP0177864B1 (de)
JP (1) JPS6191974A (de)
KR (1) KR950001956B1 (de)
CN (1) CN1003027B (de)
AT (1) ATE59116T1 (de)
AU (1) AU589568B2 (de)
CA (1) CA1252229A (de)
DE (1) DE3580891D1 (de)
RU (1) RU2050632C1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002183A1 (en) * 1985-09-30 1987-04-09 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Multijunction semiconductor device
JPS6366976A (ja) * 1986-09-08 1988-03-25 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS6350149U (de) * 1986-09-19 1988-04-05
JPS6384075A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
JPS63100858U (de) * 1986-12-19 1988-06-30
JPS63157483A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63157484A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH07114292B2 (ja) * 1986-12-22 1995-12-06 鐘淵化学工業株式会社 半導体装置及びその製法
JPH01128477A (ja) * 1987-11-12 1989-05-22 Ricoh Co Ltd アモルファスシリコン光センサー
US5021849A (en) * 1989-10-30 1991-06-04 Motorola, Inc. Compact SRAM cell with polycrystalline silicon diode load
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5432129A (en) * 1993-04-29 1995-07-11 Sgs-Thomson Microelectronics, Inc. Method of forming low resistance contacts at the junction between regions having different conductivity types
KR100275715B1 (ko) * 1993-12-28 2000-12-15 윤종용 수소화 효과 증대를 위한 반도체 소자의 제조 방법
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI349371B (en) * 2007-02-13 2011-09-21 Epistar Corp An optoelectronical semiconductor device having a bonding structure
CN101369582B (zh) * 2007-08-15 2011-03-30 旺宏电子股份有限公司 垂直式非易失性存储器及其制造方法
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
KR20100095426A (ko) * 2007-11-02 2010-08-30 어플라이드 머티어리얼스, 인코포레이티드 증착 공정들 간의 플라즈마 처리
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US8491718B2 (en) * 2008-05-28 2013-07-23 Karin Chaudhari Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
US20100116329A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
WO2010035846A1 (en) * 2008-09-26 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
DE102008054435A1 (de) * 2008-12-09 2010-06-10 Universität Zu Köln Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren
EA201101460A1 (ru) * 2009-04-07 2012-05-30 Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. Усовершенствованное тонкопленочное кремниевое покрытие для применения в фотоэлектрических устройствах
US20110124146A1 (en) * 2009-05-29 2011-05-26 Pitera Arthur J Methods of forming high-efficiency multi-junction solar cell structures
KR101074290B1 (ko) * 2009-09-04 2011-10-18 한국철강 주식회사 광기전력 장치 및 광기전력 장치의 제조 방법
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
TW201123481A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell and manufacturing method thereof
CN102117860B (zh) * 2010-01-06 2013-07-31 京东方科技集团股份有限公司 三结叠层太阳能薄膜电池及其制备方法
KR101032270B1 (ko) * 2010-03-17 2011-05-06 한국철강 주식회사 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법
US8293643B2 (en) 2010-06-21 2012-10-23 International Business Machines Corporation Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US20120048329A1 (en) * 2011-06-02 2012-03-01 Lalita Manchanda Charge-coupled photovoltaic devices
US20130264214A1 (en) * 2012-04-04 2013-10-10 Rohm And Haas Electronic Materials Llc Metal plating for ph sensitive applications
WO2017139751A1 (en) 2016-02-12 2017-08-17 Rhode Island Board Of Education Temperature and thermal gradient sensor for ceramic matrix composites and methods of preparation thereof
WO2018006075A1 (en) * 2016-07-01 2018-01-04 Rhode Island Council On Postsecondary Education High resolution strain gages for ceramic matrix composites and methods of manufacture thereof
US10782190B1 (en) 2017-12-14 2020-09-22 University Of Rhode Island Board Of Trustees Resistance temperature detector (RTD) for ceramic matrix composites

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604591B2 (ja) * 1973-11-02 1985-02-05 株式会社日立製作所 半導体集積回路装置
US4190852A (en) * 1978-09-14 1980-02-26 Warner Raymond M Jr Photovoltaic semiconductor device and method of making same
JP60041878B2 (en) * 1979-02-14 1985-09-19 Sharp Kk Thin film solar cell
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
US4316049A (en) * 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
JPS5661173A (en) * 1979-10-24 1981-05-26 Fuji Electric Co Ltd Amorphous semiconductor photovoltaic cell
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
JPS57103370A (en) * 1980-12-19 1982-06-26 Agency Of Ind Science & Technol Amorphous semiconductor solar cell
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
JPS58101469A (ja) * 1981-12-11 1983-06-16 Seiko Epson Corp 薄膜太陽電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4415760A (en) * 1982-04-12 1983-11-15 Chevron Research Company Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
US4479027A (en) * 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
US4604636A (en) * 1983-05-11 1986-08-05 Chronar Corp. Microcrystalline semiconductor method and devices
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4536647A (en) * 1983-07-15 1985-08-20 Atalla Corporation Pocket banking terminal, method and system
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
JPS60211987A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 多層構造シリコン太陽電池
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子

Also Published As

Publication number Publication date
RU2050632C1 (ru) 1995-12-20
EP0177864B1 (de) 1990-12-12
KR860003675A (ko) 1986-05-28
DE3580891D1 (de) 1991-01-24
AU589568B2 (en) 1989-10-19
CN1003027B (zh) 1989-01-04
KR950001956B1 (ko) 1995-03-07
AU4811085A (en) 1986-04-17
JPS6191974A (ja) 1986-05-10
EP0177864A2 (de) 1986-04-16
US4907052A (en) 1990-03-06
CA1252229A (en) 1989-04-04
EP0177864A3 (en) 1987-03-25
CN85107988A (zh) 1986-04-10

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