ATE59116T1 - Halbleiteranordnung mit mehreren uebergaengen. - Google Patents
Halbleiteranordnung mit mehreren uebergaengen.Info
- Publication number
- ATE59116T1 ATE59116T1 AT85112318T AT85112318T ATE59116T1 AT E59116 T1 ATE59116 T1 AT E59116T1 AT 85112318 T AT85112318 T AT 85112318T AT 85112318 T AT85112318 T AT 85112318T AT E59116 T1 ATE59116 T1 AT E59116T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- junction semiconductor
- multiple junction
- semiconductor arrangements
- diffusion
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59213944A JPS6191974A (ja) | 1984-10-11 | 1984-10-11 | 耐熱性マルチジヤンクシヨン型半導体素子 |
EP85112318A EP0177864B1 (de) | 1984-10-11 | 1985-09-28 | Halbleiteranordnung mit mehreren Übergängen |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE59116T1 true ATE59116T1 (de) | 1990-12-15 |
Family
ID=16647630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT85112318T ATE59116T1 (de) | 1984-10-11 | 1985-09-28 | Halbleiteranordnung mit mehreren uebergaengen. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4907052A (de) |
EP (1) | EP0177864B1 (de) |
JP (1) | JPS6191974A (de) |
KR (1) | KR950001956B1 (de) |
CN (1) | CN1003027B (de) |
AT (1) | ATE59116T1 (de) |
AU (1) | AU589568B2 (de) |
CA (1) | CA1252229A (de) |
DE (1) | DE3580891D1 (de) |
RU (1) | RU2050632C1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987002183A1 (en) * | 1985-09-30 | 1987-04-09 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Multijunction semiconductor device |
JPS6366976A (ja) * | 1986-09-08 | 1988-03-25 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS6350149U (de) * | 1986-09-19 | 1988-04-05 | ||
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
JPS63100858U (de) * | 1986-12-19 | 1988-06-30 | ||
JPS63157483A (ja) * | 1986-12-22 | 1988-06-30 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
JPS63157484A (ja) * | 1986-12-22 | 1988-06-30 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
JPH07114292B2 (ja) * | 1986-12-22 | 1995-12-06 | 鐘淵化学工業株式会社 | 半導体装置及びその製法 |
JPH01128477A (ja) * | 1987-11-12 | 1989-05-22 | Ricoh Co Ltd | アモルファスシリコン光センサー |
US5021849A (en) * | 1989-10-30 | 1991-06-04 | Motorola, Inc. | Compact SRAM cell with polycrystalline silicon diode load |
US5151387A (en) | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
US5432129A (en) * | 1993-04-29 | 1995-07-11 | Sgs-Thomson Microelectronics, Inc. | Method of forming low resistance contacts at the junction between regions having different conductivity types |
KR100275715B1 (ko) * | 1993-12-28 | 2000-12-15 | 윤종용 | 수소화 효과 증대를 위한 반도체 소자의 제조 방법 |
US5624869A (en) * | 1994-04-13 | 1997-04-29 | International Business Machines Corporation | Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen |
US6197628B1 (en) * | 1998-08-27 | 2001-03-06 | Micron Technology, Inc. | Ruthenium silicide diffusion barrier layers and methods of forming same |
DE102005013537A1 (de) * | 2004-03-24 | 2005-10-20 | Sharp Kk | Fotoelektrischer Wandler und Herstellverfahren für einen solchen |
US10374120B2 (en) * | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
TWI349371B (en) * | 2007-02-13 | 2011-09-21 | Epistar Corp | An optoelectronical semiconductor device having a bonding structure |
CN101369582B (zh) * | 2007-08-15 | 2011-03-30 | 旺宏电子股份有限公司 | 垂直式非易失性存储器及其制造方法 |
US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
KR20100095426A (ko) * | 2007-11-02 | 2010-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 공정들 간의 플라즈마 처리 |
WO2009059240A1 (en) * | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Intrinsic amorphous silicon layer |
US8491718B2 (en) * | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
US20100116329A1 (en) * | 2008-06-09 | 2010-05-13 | Fitzgerald Eugene A | Methods of forming high-efficiency solar cell structures |
WO2010035846A1 (en) * | 2008-09-26 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
DE102008054435A1 (de) * | 2008-12-09 | 2010-06-10 | Universität Zu Köln | Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren |
EA201101460A1 (ru) * | 2009-04-07 | 2012-05-30 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. | Усовершенствованное тонкопленочное кремниевое покрытие для применения в фотоэлектрических устройствах |
US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
KR101074290B1 (ko) * | 2009-09-04 | 2011-10-18 | 한국철강 주식회사 | 광기전력 장치 및 광기전력 장치의 제조 방법 |
US20110088760A1 (en) * | 2009-10-20 | 2011-04-21 | Applied Materials, Inc. | Methods of forming an amorphous silicon layer for thin film solar cell application |
TW201123481A (en) * | 2009-12-29 | 2011-07-01 | Auria Solar Co Ltd | Solar cell and manufacturing method thereof |
CN102117860B (zh) * | 2010-01-06 | 2013-07-31 | 京东方科技集团股份有限公司 | 三结叠层太阳能薄膜电池及其制备方法 |
KR101032270B1 (ko) * | 2010-03-17 | 2011-05-06 | 한국철강 주식회사 | 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법 |
US8293643B2 (en) | 2010-06-21 | 2012-10-23 | International Business Machines Corporation | Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon |
US8604330B1 (en) | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
US20120048329A1 (en) * | 2011-06-02 | 2012-03-01 | Lalita Manchanda | Charge-coupled photovoltaic devices |
US20130264214A1 (en) * | 2012-04-04 | 2013-10-10 | Rohm And Haas Electronic Materials Llc | Metal plating for ph sensitive applications |
WO2017139751A1 (en) | 2016-02-12 | 2017-08-17 | Rhode Island Board Of Education | Temperature and thermal gradient sensor for ceramic matrix composites and methods of preparation thereof |
WO2018006075A1 (en) * | 2016-07-01 | 2018-01-04 | Rhode Island Council On Postsecondary Education | High resolution strain gages for ceramic matrix composites and methods of manufacture thereof |
US10782190B1 (en) | 2017-12-14 | 2020-09-22 | University Of Rhode Island Board Of Trustees | Resistance temperature detector (RTD) for ceramic matrix composites |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS604591B2 (ja) * | 1973-11-02 | 1985-02-05 | 株式会社日立製作所 | 半導体集積回路装置 |
US4190852A (en) * | 1978-09-14 | 1980-02-26 | Warner Raymond M Jr | Photovoltaic semiconductor device and method of making same |
JP60041878B2 (en) * | 1979-02-14 | 1985-09-19 | Sharp Kk | Thin film solar cell |
JPS55111180A (en) * | 1979-02-19 | 1980-08-27 | Sharp Corp | Thin-film solar battery of high output voltage |
US4272641A (en) * | 1979-04-19 | 1981-06-09 | Rca Corporation | Tandem junction amorphous silicon solar cells |
US4316049A (en) * | 1979-08-28 | 1982-02-16 | Rca Corporation | High voltage series connected tandem junction solar battery |
JPS5661173A (en) * | 1979-10-24 | 1981-05-26 | Fuji Electric Co Ltd | Amorphous semiconductor photovoltaic cell |
US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
JPS57103370A (en) * | 1980-12-19 | 1982-06-26 | Agency Of Ind Science & Technol | Amorphous semiconductor solar cell |
US4387265A (en) * | 1981-07-17 | 1983-06-07 | University Of Delaware | Tandem junction amorphous semiconductor photovoltaic cell |
JPS58101469A (ja) * | 1981-12-11 | 1983-06-16 | Seiko Epson Corp | 薄膜太陽電池 |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
US4415760A (en) * | 1982-04-12 | 1983-11-15 | Chevron Research Company | Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region |
US4479027A (en) * | 1982-09-24 | 1984-10-23 | Todorof William J | Multi-layer thin-film, flexible silicon alloy photovoltaic cell |
DE3242831A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung |
US4604636A (en) * | 1983-05-11 | 1986-08-05 | Chronar Corp. | Microcrystalline semiconductor method and devices |
US4598306A (en) * | 1983-07-28 | 1986-07-01 | Energy Conversion Devices, Inc. | Barrier layer for photovoltaic devices |
US4536647A (en) * | 1983-07-15 | 1985-08-20 | Atalla Corporation | Pocket banking terminal, method and system |
US4536607A (en) * | 1984-03-01 | 1985-08-20 | Wiesmann Harold J | Photovoltaic tandem cell |
JPS60211987A (ja) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | 多層構造シリコン太陽電池 |
AU576594B2 (en) * | 1984-06-15 | 1988-09-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
JPS6249672A (ja) * | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
-
1984
- 1984-10-11 JP JP59213944A patent/JPS6191974A/ja active Pending
-
1985
- 1985-09-27 CA CA000491769A patent/CA1252229A/en not_active Expired
- 1985-09-28 DE DE8585112318T patent/DE3580891D1/de not_active Expired - Fee Related
- 1985-09-28 EP EP85112318A patent/EP0177864B1/de not_active Expired - Lifetime
- 1985-09-28 AT AT85112318T patent/ATE59116T1/de not_active IP Right Cessation
- 1985-09-30 KR KR1019850007242A patent/KR950001956B1/ko active IP Right Grant
- 1985-09-30 CN CN85107988A patent/CN1003027B/zh not_active Expired
- 1985-09-30 AU AU48110/85A patent/AU589568B2/en not_active Ceased
- 1985-10-11 RU SU853969540A patent/RU2050632C1/ru active
-
1989
- 1989-01-23 US US07/300,191 patent/US4907052A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
RU2050632C1 (ru) | 1995-12-20 |
EP0177864B1 (de) | 1990-12-12 |
KR860003675A (ko) | 1986-05-28 |
DE3580891D1 (de) | 1991-01-24 |
AU589568B2 (en) | 1989-10-19 |
CN1003027B (zh) | 1989-01-04 |
KR950001956B1 (ko) | 1995-03-07 |
AU4811085A (en) | 1986-04-17 |
JPS6191974A (ja) | 1986-05-10 |
EP0177864A2 (de) | 1986-04-16 |
US4907052A (en) | 1990-03-06 |
CA1252229A (en) | 1989-04-04 |
EP0177864A3 (en) | 1987-03-25 |
CN85107988A (zh) | 1986-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |