ATE56103T1 - Detektoranordnung mit vorverstaerker in der brennebene. - Google Patents
Detektoranordnung mit vorverstaerker in der brennebene.Info
- Publication number
- ATE56103T1 ATE56103T1 AT85900520T AT85900520T ATE56103T1 AT E56103 T1 ATE56103 T1 AT E56103T1 AT 85900520 T AT85900520 T AT 85900520T AT 85900520 T AT85900520 T AT 85900520T AT E56103 T1 ATE56103 T1 AT E56103T1
- Authority
- AT
- Austria
- Prior art keywords
- focal plane
- amplifier
- mosfet transistors
- preamplifier
- implanted
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/162—FETs are biased in the weak inversion region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Fire-Detection Mechanisms (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/558,099 US4555623A (en) | 1983-12-05 | 1983-12-05 | Pre-amplifier in focal plane detector array |
EP85900520A EP0165312B1 (de) | 1983-12-05 | 1984-11-21 | Detektoranordnung mit vorverstärker in der brennebene |
PCT/US1984/001931 WO1985002713A1 (en) | 1983-12-05 | 1984-11-21 | Pre-amplifier in focal plane detector array |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE56103T1 true ATE56103T1 (de) | 1990-09-15 |
Family
ID=24228209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT85900520T ATE56103T1 (de) | 1983-12-05 | 1984-11-21 | Detektoranordnung mit vorverstaerker in der brennebene. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4555623A (de) |
EP (1) | EP0165312B1 (de) |
JP (1) | JPS61500636A (de) |
AT (1) | ATE56103T1 (de) |
DE (1) | DE3483102D1 (de) |
WO (1) | WO1985002713A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0216924A1 (de) * | 1985-04-08 | 1987-04-08 | Irvine Sensors Corporation | Thermische bildlesevorrichtung mit einem sensor in einem elektronischen modul |
US4806761A (en) * | 1985-04-08 | 1989-02-21 | Irvine Sensors Corporation | Thermal imager incorporating electronics module having focal plane sensor mosaic |
GB8625409D0 (en) * | 1986-10-23 | 1986-11-26 | Rca Corp | Switchable mode amplifier |
US4779005A (en) * | 1987-05-11 | 1988-10-18 | Irvine Sensors Corporation | Multiple detector viewing of pixels using parallel time delay and integration circuitry |
US4868902A (en) * | 1988-02-03 | 1989-09-19 | Hughes Aircraft Company | GaAs capacitive feedback transimpedance amplifier |
US5289027A (en) * | 1988-12-09 | 1994-02-22 | Hughes Aircraft Company | Ultrathin submicron MOSFET with intrinsic channel |
US4929913A (en) * | 1989-08-14 | 1990-05-29 | Hughes Aircraft Company | GaAs focal plane array readout |
DE69218755T2 (de) * | 1992-01-24 | 1997-07-10 | Rockwell International Corp | Ausleseverstärker für starrende Infrarotbildebenenanlage |
GB2273837B (en) * | 1992-12-11 | 1996-03-13 | Marconi Gec Ltd | Amplifier devices |
US5412335A (en) * | 1994-01-14 | 1995-05-02 | Motorola, Inc. | Area-efficient current-input filter, virtual ground circuit used in same, and method therefor |
US5929434A (en) * | 1997-08-13 | 1999-07-27 | Rockwell Science Center, Llc | Ultra-low noise high bandwidth interface circuit for single-photon readout of photodetectors |
US6194966B1 (en) | 1999-02-12 | 2001-02-27 | Tritech Microelectronics, Ltd. | Cmos class ab operational amplifier operating from a single 1.5v cell |
DE19907970A1 (de) | 1999-02-24 | 2000-08-31 | Bosch Gmbh Robert | Lichtsensor |
US6157259A (en) * | 1999-04-15 | 2000-12-05 | Tritech Microelectronics, Ltd. | Biasing and sizing of the MOS transistor in weak inversion for low voltage applications |
US6680640B1 (en) * | 1999-11-11 | 2004-01-20 | Broadcom Corporation | High linearity large bandwidth, switch insensitive, programmable gain attenuator |
US6731160B1 (en) * | 1999-11-11 | 2004-05-04 | Broadcom Corporation | Adjustable bandwidth high pass filter for large input signal, low supply voltage applications |
US6696892B1 (en) * | 1999-11-11 | 2004-02-24 | Broadcom Corporation | Large dynamic range programmable gain attenuator |
US6538245B1 (en) * | 2000-10-26 | 2003-03-25 | Rockwell Science Center, Llc. | Amplified CMOS transducer for single photon read-out of photodetectors |
GB0105831D0 (en) * | 2001-03-09 | 2001-04-25 | Toumaz Technology Ltd | Method for dna sequencing utilising enzyme linked field effect transistors |
US8114591B2 (en) | 2001-03-09 | 2012-02-14 | Dna Electronics Ltd. | Sensing apparatus and method |
GB0201260D0 (en) * | 2002-01-21 | 2002-03-06 | Europ Org For Nuclear Research | A sensing and imaging device |
US6819183B1 (en) * | 2003-05-23 | 2004-11-16 | Qualcomm, Incorporated | Temperature and process compensation of MOSFET operating in sub-threshold mode |
JP2008506945A (ja) * | 2004-07-14 | 2008-03-06 | オーボテック メディカル ソリューションズ リミティド | 放射線検出器ヘッド |
US7626460B2 (en) * | 2007-10-30 | 2009-12-01 | Raytheon Company | Low noise, low power and high bandwidth capacitive feedback trans-impedance amplifier with differential FET input and bipolar emitter follower feedback |
RU2703823C1 (ru) * | 2018-12-21 | 2019-10-22 | Акционерное общество "ЛОМО" | Устройство для усиления и предварительной обработки импульсов с инфракрасного фотодиода |
CN113396537B (zh) * | 2019-04-30 | 2024-04-09 | 华为技术有限公司 | 一种放大器及放大装置 |
CN110138376B (zh) * | 2019-05-21 | 2023-02-24 | 电子科技大学 | 一种应用于非制冷红外焦平面读出电路的坏行保护电路 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1124671A (en) * | 1965-01-22 | 1968-08-21 | Driver Southall | Improvements in or relating to weighing apparatus |
GB1410539A (en) * | 1972-07-17 | 1975-10-15 | Cubic Ind Corp | Microfiche readout apparatus |
JPS51135240A (en) * | 1975-05-19 | 1976-11-24 | Toyo Noki Kk | Lifting conveyor of beet harvester |
US4092611A (en) * | 1977-05-06 | 1978-05-30 | National Semiconductor Corporation | Adaptively biased differential operational amplifier for photo diode |
JPS5855881B2 (ja) * | 1977-08-30 | 1983-12-12 | 松下電工株式会社 | 人工木質単板の製法 |
JPS5855882B2 (ja) * | 1977-10-31 | 1983-12-12 | 松下電工株式会社 | 人工木質単板の製法 |
US4201947A (en) * | 1978-02-10 | 1980-05-06 | Rca Corporation | Long-tailed-pair connections of MOSFET's operated in sub-threshold region |
JPS588156B2 (ja) * | 1979-01-18 | 1983-02-14 | 松下電器産業株式会社 | 電子部品の装着方法 |
JPS5565441A (en) * | 1978-11-09 | 1980-05-16 | Toshiba Corp | Direct mounting |
JPS55118690A (en) * | 1979-03-05 | 1980-09-11 | Matsushita Electric Ind Co Ltd | Device for carrying electronic part |
JPS5789535A (en) * | 1980-11-20 | 1982-06-03 | Sanyo Electric Co Ltd | Device for correcting mounted posture of part |
US4431971A (en) * | 1981-08-17 | 1984-02-14 | American Microsystems, Incorporated | Dynamic operational amplifier |
US4433282A (en) * | 1981-12-08 | 1984-02-21 | Intersil | Monolithic voltage divider |
JPS58161604A (ja) * | 1982-03-16 | 1983-09-26 | Bridgestone Corp | ラジアルタイヤ |
JPS58196099A (ja) * | 1982-05-11 | 1983-11-15 | 松下電器産業株式会社 | 電子部品装着装置 |
EP0098662B1 (de) * | 1982-07-09 | 1987-10-14 | Motorola, Inc. | Eingangsstufe für Infrarotempfänger |
-
1983
- 1983-12-05 US US06/558,099 patent/US4555623A/en not_active Expired - Lifetime
-
1984
- 1984-11-21 JP JP60500711A patent/JPS61500636A/ja active Pending
- 1984-11-21 AT AT85900520T patent/ATE56103T1/de not_active IP Right Cessation
- 1984-11-21 DE DE8585900520T patent/DE3483102D1/de not_active Expired - Lifetime
- 1984-11-21 WO PCT/US1984/001931 patent/WO1985002713A1/en active IP Right Grant
- 1984-11-21 EP EP85900520A patent/EP0165312B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3483102D1 (de) | 1990-10-04 |
EP0165312B1 (de) | 1990-08-29 |
US4555623A (en) | 1985-11-26 |
WO1985002713A1 (en) | 1985-06-20 |
JPS61500636A (ja) | 1986-04-03 |
EP0165312A4 (de) | 1986-05-12 |
EP0165312A1 (de) | 1985-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |