ATE542277T1 - Abstimmbarer laser mit thermisch geregeltem externen resonator - Google Patents

Abstimmbarer laser mit thermisch geregeltem externen resonator

Info

Publication number
ATE542277T1
ATE542277T1 AT10178660T AT10178660T ATE542277T1 AT E542277 T1 ATE542277 T1 AT E542277T1 AT 10178660 T AT10178660 T AT 10178660T AT 10178660 T AT10178660 T AT 10178660T AT E542277 T1 ATE542277 T1 AT E542277T1
Authority
AT
Austria
Prior art keywords
laser
tuneable mirror
tuneable
platform
thermally conductive
Prior art date
Application number
AT10178660T
Other languages
English (en)
Inventor
Giacomo Antonio Rossi
Alberto Rampulla
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Application granted granted Critical
Publication of ATE542277T1 publication Critical patent/ATE542277T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064Anti-reflection components, e.g. optical isolators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02438Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651Mode control
    • H01S5/0653Mode suppression, e.g. specific multimode
    • H01S5/0654Single longitudinal mode emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039Details on the cavity length

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
AT10178660T 2004-06-30 2004-06-30 Abstimmbarer laser mit thermisch geregeltem externen resonator ATE542277T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/EP2004/007102 WO2006002663A1 (en) 2004-06-30 2004-06-30 Thermally controlled external cavity tuneable laser
EP04740481A EP1761980B1 (de) 2004-06-30 2004-06-30 Abstimmbarer laser mit thermisch geregeltem externen resonator

Publications (1)

Publication Number Publication Date
ATE542277T1 true ATE542277T1 (de) 2012-02-15

Family

ID=34957939

Family Applications (2)

Application Number Title Priority Date Filing Date
AT10178660T ATE542277T1 (de) 2004-06-30 2004-06-30 Abstimmbarer laser mit thermisch geregeltem externen resonator
AT04740481T ATE488891T1 (de) 2004-06-30 2004-06-30 Abstimmbarer laser mit thermisch geregeltem externen resonator

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04740481T ATE488891T1 (de) 2004-06-30 2004-06-30 Abstimmbarer laser mit thermisch geregeltem externen resonator

Country Status (9)

Country Link
US (1) US8483247B2 (de)
EP (2) EP1761980B1 (de)
JP (1) JP5031561B2 (de)
CN (1) CN1977431A (de)
AT (2) ATE542277T1 (de)
AU (1) AU2004321231A1 (de)
CA (1) CA2571699C (de)
DE (1) DE602004030166D1 (de)
WO (1) WO2006002663A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602006013050D1 (de) * 2006-07-12 2010-04-29 Pgt Photonics Spa Fehlausrichtungsverhinderung in einem laser mit externem resonator mit temperaturstabilisation des r
EP2095476B1 (de) * 2006-12-22 2017-07-19 Google, Inc. Phasenregelung durch aktive thermische einstellungen in einem laser mit externem resonator
JP2008182019A (ja) * 2007-01-24 2008-08-07 Opnext Japan Inc 光送信モジュール、光伝送装置
JP2008227170A (ja) * 2007-03-13 2008-09-25 Nec Electronics Corp 光モジュール
JP2009147102A (ja) * 2007-12-14 2009-07-02 Tecdia Kk 光通信用デバイスの制御方式及び光通信用デバイスの制御方法
WO2009125442A1 (en) 2008-04-11 2009-10-15 Pirelli & C. S.P.A. Method and apparatus for reducing the amplitude modulation of optical signals in external cavity lasers
JP5483677B2 (ja) * 2009-04-02 2014-05-07 ネオフォトニクス・セミコンダクタ合同会社 半導体光通信モジュール及び、その製造方法
JP5738271B2 (ja) * 2009-04-03 2015-06-24 エグザロス・アクチェンゲゼルシャフトExalos Ag 光モジュール
CN101989728B (zh) * 2009-08-04 2014-04-02 高质激光有限公司 激光器结构和用于这种激光器结构的谐振元件
KR101124173B1 (ko) * 2010-02-16 2012-03-27 주식회사 포벨 레이저 다이오드 패키지
US9057850B2 (en) * 2011-03-24 2015-06-16 Centera Photonics Inc. Optoelectronic module
US8831049B2 (en) 2012-09-14 2014-09-09 Laxense Inc. Tunable optical system with hybrid integrated laser
CN102940529B (zh) * 2012-11-22 2015-04-01 西安炬光科技有限公司 一种用于激光医疗美容的半导体激光器***
CN102961185B (zh) * 2012-11-22 2015-09-30 西安炬光科技有限公司 激光医疗美容用半导体激光器***
CN102946052A (zh) * 2012-11-22 2013-02-27 西安炬光科技有限公司 激光医疗美容用的半导体激光器模块
CN102946053B (zh) * 2012-11-22 2015-11-25 西安炬光科技股份有限公司 医疗美容用半导体激光器模块
US9653873B1 (en) * 2013-01-16 2017-05-16 Chemled Technologies, LLC Self-locking atomic emission laser with an intracavity atomic plasma as the resonance line seeder
KR101519628B1 (ko) * 2013-03-26 2015-05-12 주식회사 포벨 소형 제작이 가능한 파장 가변 레이저 장치
CN103337783B (zh) * 2013-07-19 2015-07-08 北京信息科技大学 一种利用短腔光纤激光器的输出纵模测量温度的方法
US8804787B1 (en) * 2013-08-13 2014-08-12 Gooch And Housego Plc Narrow linewidth semiconductor laser
EP2905851B1 (de) * 2014-02-05 2022-04-06 Huawei Technologies Co., Ltd. Optische Laservorrichtung und Verfahren zur Erzeugung einer Lasermode in einer solchen Vorrichtung
KR101582614B1 (ko) * 2014-05-16 2016-01-05 전자부품연구원 레이저 모듈 제작방법 및 레이저 모듈 패키지
US9554491B1 (en) 2014-07-01 2017-01-24 Google Inc. Cooling a data center
US9377596B2 (en) * 2014-07-22 2016-06-28 Unimicron Technology Corp. Optical-electro circuit board, optical component and manufacturing method thereof
WO2016015262A1 (zh) * 2014-07-30 2016-02-04 华为技术有限公司 可调谐光器件、光网络单元及无源光网络***
EP2999064A1 (de) * 2014-09-19 2016-03-23 DirectPhotonics Industries GmbH Diodenlaser
JP6454576B2 (ja) * 2015-03-25 2019-01-16 日本オクラロ株式会社 光送信モジュール
JP5895091B1 (ja) * 2015-09-01 2016-03-30 株式会社フジクラ 光モジュール
JP2017059661A (ja) * 2015-09-16 2017-03-23 ウシオ電機株式会社 外部共振器型レーザ装置
KR101885782B1 (ko) 2015-09-25 2018-08-08 (주)엠이엘텔레콤 파장가변 광송신기
CN109788902A (zh) * 2016-07-06 2019-05-21 开米美景公司 用于检测水肿的***和方法
CN106159672A (zh) * 2016-08-30 2016-11-23 中国科学院半导体研究所 基于光纤透镜与光栅集成的窄线宽外腔激光器结构
US10365448B2 (en) * 2017-12-15 2019-07-30 Sumitomo Electric Industries, Ltd. Optical module having two lens system and monitor photodiode between two lenses
CN109188614B (zh) 2018-08-28 2020-02-14 武汉电信器件有限公司 双载波集成光器件及光电模块
JP6836043B2 (ja) * 2019-07-26 2021-02-24 株式会社金門光波 ファイバーレーザー装置
CN112397995B (zh) * 2019-08-02 2022-02-15 苏州旭创科技有限公司 一种窄线宽固定波长激光器及光模块
CN110611242A (zh) * 2019-10-28 2019-12-24 微源光子(深圳)科技有限公司 一种相干激光雷达使用的窄线宽激光器
US11848541B2 (en) 2020-12-15 2023-12-19 Ii-Vi Delaware, Inc. Spectral beam combiner with independent wavelength stabilization
US11848539B2 (en) * 2021-02-18 2023-12-19 Ioptis Corp. Narrow linewidth semiconductor laser device
CN114927928A (zh) * 2022-06-02 2022-08-19 刘婷婷 一种用于激光稳频***的控温f-p标准具

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298194A (ja) * 1986-06-18 1987-12-25 Fujitsu Ltd レ−ザ発光装置
JPS63183A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd レ−ザ発光装置
JPH0897516A (ja) * 1994-09-22 1996-04-12 Ando Electric Co Ltd 波長安定化外部共振器型ld光源
KR100322691B1 (ko) * 1995-01-27 2002-05-13 윤종용 제2고조파발생장치
IL118209A0 (en) * 1996-05-09 1998-02-08 Yeda Res & Dev Active electro-optical wavelength-selective mirrors and active electro-optic wavelength-selective filters
US6205159B1 (en) * 1997-06-23 2001-03-20 Newport Corporation Discrete wavelength liquid crystal tuned external cavity diode laser
JP2000012955A (ja) 1998-06-19 2000-01-14 Yokogawa Electric Corp 自己注入同期型半導体レーザ
DE19827699A1 (de) * 1998-06-22 1999-12-23 Siemens Ag Wellenlängenstabilisierte Laseranordnung
US6526071B1 (en) * 1998-10-16 2003-02-25 New Focus, Inc. Tunable laser transmitter with internal wavelength grid generators
US6879619B1 (en) * 1999-07-27 2005-04-12 Intel Corporation Method and apparatus for filtering an optical beam
JP2002014257A (ja) * 2000-06-30 2002-01-18 Furukawa Electric Co Ltd:The 半導体レーザモジュール
SE520213C2 (sv) * 2000-12-07 2003-06-10 Radians Innova Ab Anordning och metod för minskning av spontanemission från externkavitetslasrar.
JP3794552B2 (ja) * 2001-03-09 2006-07-05 古河電気工業株式会社 光モジュール、光送信器及び光モジュールの製造方法
US6724797B2 (en) * 2001-07-06 2004-04-20 Intel Corporation External cavity laser with selective thermal control
JP4066665B2 (ja) * 2002-02-08 2008-03-26 住友電気工業株式会社 パラレル送受信モジュール
US6763047B2 (en) 2002-06-15 2004-07-13 Intel Corporation External cavity laser apparatus and methods
WO2004070893A2 (en) * 2003-02-05 2004-08-19 Gws-Photonics Ltd. External cavity tunable laser and control
US7224504B2 (en) * 2003-07-30 2007-05-29 Asml Holding N. V. Deformable mirror using piezoelectric actuators formed as an integrated circuit and method of use

Also Published As

Publication number Publication date
DE602004030166D1 (de) 2010-12-30
CA2571699A1 (en) 2006-01-12
EP1761980B1 (de) 2010-11-17
US8483247B2 (en) 2013-07-09
WO2006002663A1 (en) 2006-01-12
JP2008504701A (ja) 2008-02-14
EP2273630A1 (de) 2011-01-12
EP2273630B1 (de) 2012-01-18
CA2571699C (en) 2015-11-24
JP5031561B2 (ja) 2012-09-19
AU2004321231A1 (en) 2006-01-12
ATE488891T1 (de) 2010-12-15
EP1761980A1 (de) 2007-03-14
US20080298402A1 (en) 2008-12-04
CN1977431A (zh) 2007-06-06

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