ATE542277T1 - Abstimmbarer laser mit thermisch geregeltem externen resonator - Google Patents
Abstimmbarer laser mit thermisch geregeltem externen resonatorInfo
- Publication number
- ATE542277T1 ATE542277T1 AT10178660T AT10178660T ATE542277T1 AT E542277 T1 ATE542277 T1 AT E542277T1 AT 10178660 T AT10178660 T AT 10178660T AT 10178660 T AT10178660 T AT 10178660T AT E542277 T1 ATE542277 T1 AT E542277T1
- Authority
- AT
- Austria
- Prior art keywords
- laser
- tuneable mirror
- tuneable
- platform
- thermally conductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2004/007102 WO2006002663A1 (en) | 2004-06-30 | 2004-06-30 | Thermally controlled external cavity tuneable laser |
EP04740481A EP1761980B1 (de) | 2004-06-30 | 2004-06-30 | Abstimmbarer laser mit thermisch geregeltem externen resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE542277T1 true ATE542277T1 (de) | 2012-02-15 |
Family
ID=34957939
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10178660T ATE542277T1 (de) | 2004-06-30 | 2004-06-30 | Abstimmbarer laser mit thermisch geregeltem externen resonator |
AT04740481T ATE488891T1 (de) | 2004-06-30 | 2004-06-30 | Abstimmbarer laser mit thermisch geregeltem externen resonator |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04740481T ATE488891T1 (de) | 2004-06-30 | 2004-06-30 | Abstimmbarer laser mit thermisch geregeltem externen resonator |
Country Status (9)
Country | Link |
---|---|
US (1) | US8483247B2 (de) |
EP (2) | EP1761980B1 (de) |
JP (1) | JP5031561B2 (de) |
CN (1) | CN1977431A (de) |
AT (2) | ATE542277T1 (de) |
AU (1) | AU2004321231A1 (de) |
CA (1) | CA2571699C (de) |
DE (1) | DE602004030166D1 (de) |
WO (1) | WO2006002663A1 (de) |
Families Citing this family (40)
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DE602006013050D1 (de) * | 2006-07-12 | 2010-04-29 | Pgt Photonics Spa | Fehlausrichtungsverhinderung in einem laser mit externem resonator mit temperaturstabilisation des r |
EP2095476B1 (de) * | 2006-12-22 | 2017-07-19 | Google, Inc. | Phasenregelung durch aktive thermische einstellungen in einem laser mit externem resonator |
JP2008182019A (ja) * | 2007-01-24 | 2008-08-07 | Opnext Japan Inc | 光送信モジュール、光伝送装置 |
JP2008227170A (ja) * | 2007-03-13 | 2008-09-25 | Nec Electronics Corp | 光モジュール |
JP2009147102A (ja) * | 2007-12-14 | 2009-07-02 | Tecdia Kk | 光通信用デバイスの制御方式及び光通信用デバイスの制御方法 |
WO2009125442A1 (en) | 2008-04-11 | 2009-10-15 | Pirelli & C. S.P.A. | Method and apparatus for reducing the amplitude modulation of optical signals in external cavity lasers |
JP5483677B2 (ja) * | 2009-04-02 | 2014-05-07 | ネオフォトニクス・セミコンダクタ合同会社 | 半導体光通信モジュール及び、その製造方法 |
JP5738271B2 (ja) * | 2009-04-03 | 2015-06-24 | エグザロス・アクチェンゲゼルシャフトExalos Ag | 光モジュール |
CN101989728B (zh) * | 2009-08-04 | 2014-04-02 | 高质激光有限公司 | 激光器结构和用于这种激光器结构的谐振元件 |
KR101124173B1 (ko) * | 2010-02-16 | 2012-03-27 | 주식회사 포벨 | 레이저 다이오드 패키지 |
US9057850B2 (en) * | 2011-03-24 | 2015-06-16 | Centera Photonics Inc. | Optoelectronic module |
US8831049B2 (en) | 2012-09-14 | 2014-09-09 | Laxense Inc. | Tunable optical system with hybrid integrated laser |
CN102940529B (zh) * | 2012-11-22 | 2015-04-01 | 西安炬光科技有限公司 | 一种用于激光医疗美容的半导体激光器*** |
CN102961185B (zh) * | 2012-11-22 | 2015-09-30 | 西安炬光科技有限公司 | 激光医疗美容用半导体激光器*** |
CN102946052A (zh) * | 2012-11-22 | 2013-02-27 | 西安炬光科技有限公司 | 激光医疗美容用的半导体激光器模块 |
CN102946053B (zh) * | 2012-11-22 | 2015-11-25 | 西安炬光科技股份有限公司 | 医疗美容用半导体激光器模块 |
US9653873B1 (en) * | 2013-01-16 | 2017-05-16 | Chemled Technologies, LLC | Self-locking atomic emission laser with an intracavity atomic plasma as the resonance line seeder |
KR101519628B1 (ko) * | 2013-03-26 | 2015-05-12 | 주식회사 포벨 | 소형 제작이 가능한 파장 가변 레이저 장치 |
CN103337783B (zh) * | 2013-07-19 | 2015-07-08 | 北京信息科技大学 | 一种利用短腔光纤激光器的输出纵模测量温度的方法 |
US8804787B1 (en) * | 2013-08-13 | 2014-08-12 | Gooch And Housego Plc | Narrow linewidth semiconductor laser |
EP2905851B1 (de) * | 2014-02-05 | 2022-04-06 | Huawei Technologies Co., Ltd. | Optische Laservorrichtung und Verfahren zur Erzeugung einer Lasermode in einer solchen Vorrichtung |
KR101582614B1 (ko) * | 2014-05-16 | 2016-01-05 | 전자부품연구원 | 레이저 모듈 제작방법 및 레이저 모듈 패키지 |
US9554491B1 (en) | 2014-07-01 | 2017-01-24 | Google Inc. | Cooling a data center |
US9377596B2 (en) * | 2014-07-22 | 2016-06-28 | Unimicron Technology Corp. | Optical-electro circuit board, optical component and manufacturing method thereof |
WO2016015262A1 (zh) * | 2014-07-30 | 2016-02-04 | 华为技术有限公司 | 可调谐光器件、光网络单元及无源光网络*** |
EP2999064A1 (de) * | 2014-09-19 | 2016-03-23 | DirectPhotonics Industries GmbH | Diodenlaser |
JP6454576B2 (ja) * | 2015-03-25 | 2019-01-16 | 日本オクラロ株式会社 | 光送信モジュール |
JP5895091B1 (ja) * | 2015-09-01 | 2016-03-30 | 株式会社フジクラ | 光モジュール |
JP2017059661A (ja) * | 2015-09-16 | 2017-03-23 | ウシオ電機株式会社 | 外部共振器型レーザ装置 |
KR101885782B1 (ko) | 2015-09-25 | 2018-08-08 | (주)엠이엘텔레콤 | 파장가변 광송신기 |
CN109788902A (zh) * | 2016-07-06 | 2019-05-21 | 开米美景公司 | 用于检测水肿的***和方法 |
CN106159672A (zh) * | 2016-08-30 | 2016-11-23 | 中国科学院半导体研究所 | 基于光纤透镜与光栅集成的窄线宽外腔激光器结构 |
US10365448B2 (en) * | 2017-12-15 | 2019-07-30 | Sumitomo Electric Industries, Ltd. | Optical module having two lens system and monitor photodiode between two lenses |
CN109188614B (zh) | 2018-08-28 | 2020-02-14 | 武汉电信器件有限公司 | 双载波集成光器件及光电模块 |
JP6836043B2 (ja) * | 2019-07-26 | 2021-02-24 | 株式会社金門光波 | ファイバーレーザー装置 |
CN112397995B (zh) * | 2019-08-02 | 2022-02-15 | 苏州旭创科技有限公司 | 一种窄线宽固定波长激光器及光模块 |
CN110611242A (zh) * | 2019-10-28 | 2019-12-24 | 微源光子(深圳)科技有限公司 | 一种相干激光雷达使用的窄线宽激光器 |
US11848541B2 (en) | 2020-12-15 | 2023-12-19 | Ii-Vi Delaware, Inc. | Spectral beam combiner with independent wavelength stabilization |
US11848539B2 (en) * | 2021-02-18 | 2023-12-19 | Ioptis Corp. | Narrow linewidth semiconductor laser device |
CN114927928A (zh) * | 2022-06-02 | 2022-08-19 | 刘婷婷 | 一种用于激光稳频***的控温f-p标准具 |
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JPS62298194A (ja) * | 1986-06-18 | 1987-12-25 | Fujitsu Ltd | レ−ザ発光装置 |
JPS63183A (ja) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | レ−ザ発光装置 |
JPH0897516A (ja) * | 1994-09-22 | 1996-04-12 | Ando Electric Co Ltd | 波長安定化外部共振器型ld光源 |
KR100322691B1 (ko) * | 1995-01-27 | 2002-05-13 | 윤종용 | 제2고조파발생장치 |
IL118209A0 (en) * | 1996-05-09 | 1998-02-08 | Yeda Res & Dev | Active electro-optical wavelength-selective mirrors and active electro-optic wavelength-selective filters |
US6205159B1 (en) * | 1997-06-23 | 2001-03-20 | Newport Corporation | Discrete wavelength liquid crystal tuned external cavity diode laser |
JP2000012955A (ja) | 1998-06-19 | 2000-01-14 | Yokogawa Electric Corp | 自己注入同期型半導体レーザ |
DE19827699A1 (de) * | 1998-06-22 | 1999-12-23 | Siemens Ag | Wellenlängenstabilisierte Laseranordnung |
US6526071B1 (en) * | 1998-10-16 | 2003-02-25 | New Focus, Inc. | Tunable laser transmitter with internal wavelength grid generators |
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JP2002014257A (ja) * | 2000-06-30 | 2002-01-18 | Furukawa Electric Co Ltd:The | 半導体レーザモジュール |
SE520213C2 (sv) * | 2000-12-07 | 2003-06-10 | Radians Innova Ab | Anordning och metod för minskning av spontanemission från externkavitetslasrar. |
JP3794552B2 (ja) * | 2001-03-09 | 2006-07-05 | 古河電気工業株式会社 | 光モジュール、光送信器及び光モジュールの製造方法 |
US6724797B2 (en) * | 2001-07-06 | 2004-04-20 | Intel Corporation | External cavity laser with selective thermal control |
JP4066665B2 (ja) * | 2002-02-08 | 2008-03-26 | 住友電気工業株式会社 | パラレル送受信モジュール |
US6763047B2 (en) | 2002-06-15 | 2004-07-13 | Intel Corporation | External cavity laser apparatus and methods |
WO2004070893A2 (en) * | 2003-02-05 | 2004-08-19 | Gws-Photonics Ltd. | External cavity tunable laser and control |
US7224504B2 (en) * | 2003-07-30 | 2007-05-29 | Asml Holding N. V. | Deformable mirror using piezoelectric actuators formed as an integrated circuit and method of use |
-
2004
- 2004-06-30 EP EP04740481A patent/EP1761980B1/de not_active Expired - Lifetime
- 2004-06-30 AU AU2004321231A patent/AU2004321231A1/en not_active Abandoned
- 2004-06-30 EP EP10178660A patent/EP2273630B1/de not_active Expired - Lifetime
- 2004-06-30 CA CA2571699A patent/CA2571699C/en not_active Expired - Fee Related
- 2004-06-30 CN CNA2004800434838A patent/CN1977431A/zh active Pending
- 2004-06-30 US US11/631,111 patent/US8483247B2/en active Active
- 2004-06-30 DE DE602004030166T patent/DE602004030166D1/de not_active Expired - Lifetime
- 2004-06-30 AT AT10178660T patent/ATE542277T1/de active
- 2004-06-30 WO PCT/EP2004/007102 patent/WO2006002663A1/en not_active Application Discontinuation
- 2004-06-30 JP JP2007518458A patent/JP5031561B2/ja not_active Expired - Fee Related
- 2004-06-30 AT AT04740481T patent/ATE488891T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE602004030166D1 (de) | 2010-12-30 |
CA2571699A1 (en) | 2006-01-12 |
EP1761980B1 (de) | 2010-11-17 |
US8483247B2 (en) | 2013-07-09 |
WO2006002663A1 (en) | 2006-01-12 |
JP2008504701A (ja) | 2008-02-14 |
EP2273630A1 (de) | 2011-01-12 |
EP2273630B1 (de) | 2012-01-18 |
CA2571699C (en) | 2015-11-24 |
JP5031561B2 (ja) | 2012-09-19 |
AU2004321231A1 (en) | 2006-01-12 |
ATE488891T1 (de) | 2010-12-15 |
EP1761980A1 (de) | 2007-03-14 |
US20080298402A1 (en) | 2008-12-04 |
CN1977431A (zh) | 2007-06-06 |
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