ATE531124T1 - Verstärkerschaltkreis mit schwachem phasengeräusch - Google Patents

Verstärkerschaltkreis mit schwachem phasengeräusch

Info

Publication number
ATE531124T1
ATE531124T1 AT09157505T AT09157505T ATE531124T1 AT E531124 T1 ATE531124 T1 AT E531124T1 AT 09157505 T AT09157505 T AT 09157505T AT 09157505 T AT09157505 T AT 09157505T AT E531124 T1 ATE531124 T1 AT E531124T1
Authority
AT
Austria
Prior art keywords
transistor
amplifier circuit
phase noise
low phase
gate
Prior art date
Application number
AT09157505T
Other languages
English (en)
Inventor
Carlos Velasquez
Original Assignee
Swatch Group Res & Dev Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swatch Group Res & Dev Ltd filed Critical Swatch Group Res & Dev Ltd
Application granted granted Critical
Publication of ATE531124T1 publication Critical patent/ATE531124T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45366Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45476Indexing scheme relating to differential amplifiers the CSC comprising a mirror circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45664Indexing scheme relating to differential amplifiers the LC comprising one or more cascaded inverter stages as output stage at one output of the dif amp circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45674Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
AT09157505T 2009-04-07 2009-04-07 Verstärkerschaltkreis mit schwachem phasengeräusch ATE531124T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09157505A EP2239842B1 (de) 2009-04-07 2009-04-07 Verstärkerschaltkreis mit schwachem Phasengeräusch

Publications (1)

Publication Number Publication Date
ATE531124T1 true ATE531124T1 (de) 2011-11-15

Family

ID=41000060

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09157505T ATE531124T1 (de) 2009-04-07 2009-04-07 Verstärkerschaltkreis mit schwachem phasengeräusch

Country Status (8)

Country Link
US (1) US8102210B2 (de)
EP (1) EP2239842B1 (de)
JP (1) JP5090494B2 (de)
KR (1) KR101209405B1 (de)
CN (1) CN101860332B (de)
AT (1) ATE531124T1 (de)
HK (1) HK1149644A1 (de)
TW (1) TWI448068B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101604380B1 (ko) * 2010-04-22 2016-03-18 삼성전자 주식회사 반도체 집적 회로 장치
CN102006020A (zh) * 2010-12-14 2011-04-06 苏州华芯微电子股份有限公司 信号放大电路
CN102571005B (zh) * 2010-12-27 2016-08-17 无锡华润上华半导体有限公司 轨到轨运算放大器
JP5931628B2 (ja) * 2011-08-01 2016-06-08 日本電波工業株式会社 水晶発振器
US10295618B2 (en) * 2014-09-19 2019-05-21 Hitachi Metals, Ltd. Magnetic permeability sensor and magnetic permeability detecting method, dielectric permittivity sensor and dielectric permittivity detecting method, and magnetic permeability and dielectric permittivity sensor and magnetic permeability and dielectric permittivity detecting method
CN104538056A (zh) * 2015-01-05 2015-04-22 武汉新芯集成电路制造有限公司 一种电熔丝感应放大器
US9559667B1 (en) 2015-08-21 2017-01-31 International Business Machines Corporation Oscillator phase noise using active device stacking
US11071499B2 (en) * 2016-05-17 2021-07-27 Case Western Reserve University Multichannel ultra-low noise amplifier
CN108155881B (zh) * 2016-12-05 2021-10-29 华大半导体有限公司 轨到轨输入运放器
RU2652504C1 (ru) * 2017-09-20 2018-04-26 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) Быстродействующий дифференциальный операционный усилитель

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6282704A (ja) * 1985-10-07 1987-04-16 Nec Corp 増幅回路
JPH0653758A (ja) * 1992-07-31 1994-02-25 Hitachi Ltd 半導体集積回路
CH689088A5 (de) 1994-05-10 1998-09-15 Microdul Ag Resonanzoszillator.
US5631606A (en) * 1995-08-01 1997-05-20 Information Storage Devices, Inc. Fully differential output CMOS power amplifier
EP0987763A1 (de) 1998-09-15 2000-03-22 STMicroelectronics S.r.l. Transistor mit angeschlossener Diode und Herstellungsverfahren dazu
US6512400B1 (en) * 2000-08-30 2003-01-28 Micron Technology, Inc. Integrated circuit comparator or amplifier
US6788113B2 (en) * 2001-06-19 2004-09-07 Fujitsu Limited Differential signal output apparatus, semiconductor integrated circuit apparatus having the differential signal output apparatus, and differential signal transmission system
US20050007198A1 (en) * 2001-10-23 2005-01-13 Versteegen Marius Gerardus Jacobus Power amplifier module
DE10155526C2 (de) * 2001-11-12 2003-09-04 Infineon Technologies Ag LVDS-Treiber für kleine Versorungsspannungen
US6756847B2 (en) * 2002-03-01 2004-06-29 Broadcom Corporation Operational amplifier with increased common mode input range
JP2004112453A (ja) * 2002-09-19 2004-04-08 Ricoh Co Ltd 信号伝送装置
US7068077B1 (en) * 2003-04-17 2006-06-27 Cypress Semiconductor Corporation LVDS output driver having low supply voltage capability
US6806744B1 (en) 2003-10-03 2004-10-19 National Semiconductor Corporation High speed low voltage differential to rail-to-rail single ended converter
JP2008052546A (ja) * 2006-08-25 2008-03-06 Seiko Instruments Inc 定電圧回路及びそれを用いた水晶発振回路
JP2008092106A (ja) * 2006-09-29 2008-04-17 Nec Electronics Corp 差動増幅回路

Also Published As

Publication number Publication date
US8102210B2 (en) 2012-01-24
US20100253433A1 (en) 2010-10-07
HK1149644A1 (en) 2011-10-07
TWI448068B (zh) 2014-08-01
EP2239842B1 (de) 2011-10-26
KR20100111617A (ko) 2010-10-15
TW201108599A (en) 2011-03-01
JP2010246124A (ja) 2010-10-28
JP5090494B2 (ja) 2012-12-05
EP2239842A1 (de) 2010-10-13
CN101860332B (zh) 2014-04-30
CN101860332A (zh) 2010-10-13
KR101209405B1 (ko) 2012-12-06

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Legal Events

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