ATE520158T1 - Verfahren zum herstellen organischer feldeffekttransistoren - Google Patents
Verfahren zum herstellen organischer feldeffekttransistorenInfo
- Publication number
- ATE520158T1 ATE520158T1 AT07728760T AT07728760T ATE520158T1 AT E520158 T1 ATE520158 T1 AT E520158T1 AT 07728760 T AT07728760 T AT 07728760T AT 07728760 T AT07728760 T AT 07728760T AT E520158 T1 ATE520158 T1 AT E520158T1
- Authority
- AT
- Austria
- Prior art keywords
- group
- hydrogen
- substrate
- organic field
- field effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 125000004429 atom Chemical group 0.000 abstract 2
- 125000001190 organyl group Chemical group 0.000 abstract 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/06—Peri-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/12—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains three hetero rings
- C07D471/16—Peri-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
- C07D493/06—Peri-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41714906A | 2006-05-04 | 2006-05-04 | |
| US11/550,229 US20080090325A1 (en) | 2006-10-17 | 2006-10-17 | Method for producing organic field-effect transistors |
| PCT/EP2007/054307 WO2007128774A1 (en) | 2006-05-04 | 2007-05-03 | Method for producing organic field-effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE520158T1 true ATE520158T1 (de) | 2011-08-15 |
Family
ID=38226641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07728760T ATE520158T1 (de) | 2006-05-04 | 2007-05-03 | Verfahren zum herstellen organischer feldeffekttransistoren |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7910736B2 (de) |
| EP (1) | EP2022105B1 (de) |
| JP (1) | JP5470606B2 (de) |
| KR (1) | KR101364873B1 (de) |
| AT (1) | ATE520158T1 (de) |
| WO (1) | WO2007128774A1 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080103076A (ko) * | 2006-02-17 | 2008-11-26 | 바스프 에스이 | 플루오르화 릴렌테트라카르복실산 유도체 및 이의 용도 |
| US20070269924A1 (en) * | 2006-05-18 | 2007-11-22 | Basf Aktiengesellschaft | Patterning nanowires on surfaces for fabricating nanoscale electronic devices |
| EP2170862A1 (de) * | 2007-06-22 | 2010-04-07 | Basf Se | VERWENDUNG VON N,Ný-BIS(1,1-DIHYDROPERFLUOR-C3-C5-ALKYL)PERYLEN-3,4:9,10-TETRACARBONSÄUREDIIMIDE |
| US20110068328A1 (en) * | 2007-08-17 | 2011-03-24 | Basf Se | Halogen-containing perylenetetracarboxylic acid derivatives and the use thereof |
| WO2009056626A1 (en) * | 2007-10-31 | 2009-05-07 | Basf Se | Use of halogenated phthalocyanines |
| CN101952988B (zh) * | 2008-02-05 | 2015-12-16 | 巴斯夫欧洲公司 | 苝半导体及其制备方法和用途 |
| JP2011519350A (ja) * | 2008-03-19 | 2011-07-07 | ビーエーエスエフ ソシエタス・ヨーロピア | Ｎ，ｎ’−ビス（フルオロフェニルアルキル）で置換されたペリレン−３，４：９，１０−テトラカルボキシイミド、ならびにその製造および使用 |
| US8299354B2 (en) * | 2008-08-19 | 2012-10-30 | Sabic Innovative Plastics Ip B.V. | Luminescent solar collector |
| US8304645B2 (en) * | 2008-08-19 | 2012-11-06 | Sabic Innovative Plastics Ip B.V. | Luminescent solar collector |
| CN103415522B (zh) * | 2011-03-15 | 2016-01-13 | 巴斯夫欧洲公司 | 四氮杂靴二蒽化合物及其作为n-型半导体的用途 |
| EP2764034B1 (de) * | 2011-10-04 | 2023-08-30 | CLAP Co., Ltd. | Auf benzodionen basierende polymere |
| CN106029665B (zh) * | 2014-02-24 | 2018-08-07 | 巴斯夫欧洲公司 | 新的环吖嗪及其作为半导体的用途 |
| SG11201609435WA (en) | 2014-05-12 | 2016-12-29 | Capacitor Sciences Inc | Energy storage device and method of production thereof |
| US20170301477A1 (en) | 2016-04-04 | 2017-10-19 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
| US10340082B2 (en) | 2015-05-12 | 2019-07-02 | Capacitor Sciences Incorporated | Capacitor and method of production thereof |
| US10347423B2 (en) | 2014-05-12 | 2019-07-09 | Capacitor Sciences Incorporated | Solid multilayer structure as semiproduct for meta-capacitor |
| US10319523B2 (en) | 2014-05-12 | 2019-06-11 | Capacitor Sciences Incorporated | Yanli dielectric materials and capacitor thereof |
| JP6668341B2 (ja) | 2014-11-04 | 2020-03-18 | キャパシタ サイエンシス インコーポレイテッド | エネルギー蓄積デバイスおよびその製造方法 |
| US9932358B2 (en) | 2015-05-21 | 2018-04-03 | Capacitor Science Incorporated | Energy storage molecular material, crystal dielectric layer and capacitor |
| US9941051B2 (en) | 2015-06-26 | 2018-04-10 | Capactor Sciences Incorporated | Coiled capacitor |
| US10026553B2 (en) | 2015-10-21 | 2018-07-17 | Capacitor Sciences Incorporated | Organic compound, crystal dielectric layer and capacitor |
| US10305295B2 (en) | 2016-02-12 | 2019-05-28 | Capacitor Sciences Incorporated | Energy storage cell, capacitive energy storage module, and capacitive energy storage system |
| US10636575B2 (en) | 2016-02-12 | 2020-04-28 | Capacitor Sciences Incorporated | Furuta and para-Furuta polymer formulations and capacitors |
| US10566138B2 (en) | 2016-04-04 | 2020-02-18 | Capacitor Sciences Incorporated | Hein electro-polarizable compound and capacitor thereof |
| US10153087B2 (en) * | 2016-04-04 | 2018-12-11 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
| US9978517B2 (en) | 2016-04-04 | 2018-05-22 | Capacitor Sciences Incorporated | Electro-polarizable compound and capacitor |
| AU2018315623B2 (en) * | 2017-08-08 | 2022-03-24 | Lleaf Pty Ltd | "Compounds as potential dye molecules" |
| SG11202004660VA (en) * | 2017-11-20 | 2020-06-29 | Capacitor Sciences Inc | Hein electro-polarizable compound and capacitor thereof |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3235526C2 (de) | 1982-09-25 | 1998-03-19 | Basf Ag | Substituierte Perylen-3,4,9,10-tetracarbonsäurediimide |
| US4667036A (en) | 1983-08-27 | 1987-05-19 | Basf Aktiengesellschaft | Concentration of light over a particular area, and novel perylene-3,4,9,10-tetracarboxylic acid diimides |
| JPH07106613A (ja) * | 1993-09-29 | 1995-04-21 | Nippon Shokubai Co Ltd | 有機ｎ型半導体およびこれを用いた有機太陽電池 |
| JP3230175B2 (ja) | 1994-04-26 | 2001-11-19 | コニカ株式会社 | 電子写真感光体 |
| JP4054377B2 (ja) * | 1995-01-20 | 2008-02-27 | ビーエーエスエフ アクチェンゲゼルシャフト | 置換クァテルリレンテトラカルボン酸ジイミド |
| DE19547209A1 (de) * | 1995-12-18 | 1997-06-19 | Basf Ag | 1,7-Diaroxy-oder -arylthiosubstituierte Perylen-3,4,9,10-tetracarbonsäuren, deren Dianhydride und Diimide |
| DE19547210A1 (de) * | 1995-12-18 | 1997-06-19 | Basf Ag | 1,7-Disubstituierte Perylen-3,4,9-10-tetracarbonsäuren, deren Dianhydride und Diimide |
| DE10039232A1 (de) | 2000-08-11 | 2002-02-21 | Basf Ag | Flüssigkristalline Perylen-3,4:9,10-tetracarbonsäurediimide |
| DE10148172B4 (de) * | 2001-09-28 | 2007-11-15 | Qimonda Ag | Fluoreszierende Naphthalin-1,4,5,8-tetracarbonsäurebisimide mit elektronenschiebendem Substituenten am Kern |
| DE10225595A1 (de) * | 2002-06-07 | 2003-12-18 | Basf Ag | 1,6,9,14-Tetrasubstituierte Terrylentetracarbonsäurediimide |
| US6861664B2 (en) * | 2003-07-25 | 2005-03-01 | Xerox Corporation | Device with n-type semiconductor |
| CN1980791B (zh) | 2004-01-26 | 2012-08-22 | 西北大学 | 苝n-型半导体和相关器件 |
| DE102004006832A1 (de) * | 2004-02-12 | 2005-08-25 | Modine Manufacturing Co., Racine | Luftführungsgehäuse |
| JP2005228968A (ja) * | 2004-02-13 | 2005-08-25 | Sharp Corp | 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置 |
| JP5013665B2 (ja) | 2004-09-10 | 2012-08-29 | 国立大学法人東京工業大学 | ベンゾトリアゾール構造含有高分子及びその製造方法、並びに電荷輸送材料及び有機電子デバイス |
| US7795145B2 (en) * | 2006-02-15 | 2010-09-14 | Basf Aktiengesellschaft | Patterning crystalline compounds on surfaces |
| US20070269924A1 (en) * | 2006-05-18 | 2007-11-22 | Basf Aktiengesellschaft | Patterning nanowires on surfaces for fabricating nanoscale electronic devices |
| JP2011519350A (ja) * | 2008-03-19 | 2011-07-07 | ビーエーエスエフ ソシエタス・ヨーロピア | Ｎ，ｎ’−ビス（フルオロフェニルアルキル）で置換されたペリレン−３，４：９，１０−テトラカルボキシイミド、ならびにその製造および使用 |
-
2007
- 2007-05-03 WO PCT/EP2007/054307 patent/WO2007128774A1/en active Application Filing
- 2007-05-03 JP JP2009508350A patent/JP5470606B2/ja not_active Expired - Fee Related
- 2007-05-03 EP EP07728760A patent/EP2022105B1/de not_active Not-in-force
- 2007-05-03 AT AT07728760T patent/ATE520158T1/de not_active IP Right Cessation
- 2007-05-03 KR KR1020087029379A patent/KR101364873B1/ko not_active IP Right Cessation
- 2007-05-04 US US11/744,611 patent/US7910736B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007128774A1 (en) | 2007-11-15 |
| US20080017850A1 (en) | 2008-01-24 |
| JP5470606B2 (ja) | 2014-04-16 |
| EP2022105B1 (de) | 2011-08-10 |
| KR20090018082A (ko) | 2009-02-19 |
| KR101364873B1 (ko) | 2014-02-19 |
| US7910736B2 (en) | 2011-03-22 |
| JP2009535830A (ja) | 2009-10-01 |
| EP2022105A1 (de) | 2009-02-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |