ATE508393T1 - Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur - Google Patents
Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststrukturInfo
- Publication number
- ATE508393T1 ATE508393T1 AT05809661T AT05809661T ATE508393T1 AT E508393 T1 ATE508393 T1 AT E508393T1 AT 05809661 T AT05809661 T AT 05809661T AT 05809661 T AT05809661 T AT 05809661T AT E508393 T1 ATE508393 T1 AT E508393T1
- Authority
- AT
- Austria
- Prior art keywords
- antireflection film
- producing
- composition
- forming
- meth
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004350632 | 2004-12-03 | ||
PCT/JP2005/021756 WO2006059555A1 (ja) | 2004-12-03 | 2005-11-28 | 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE508393T1 true ATE508393T1 (de) | 2011-05-15 |
Family
ID=36564988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05809661T ATE508393T1 (de) | 2004-12-03 | 2005-11-28 | Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur |
Country Status (9)
Country | Link |
---|---|
US (1) | US7709182B2 (de) |
EP (1) | EP1818723B1 (de) |
JP (1) | JP4525683B2 (de) |
KR (1) | KR100966197B1 (de) |
CN (1) | CN101080674B (de) |
AT (1) | ATE508393T1 (de) |
DE (1) | DE602005027888D1 (de) |
TW (1) | TWI383264B (de) |
WO (1) | WO2006059555A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4322205B2 (ja) | 2004-12-27 | 2009-08-26 | 東京応化工業株式会社 | レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法 |
US7544750B2 (en) * | 2005-10-13 | 2009-06-09 | International Business Machines Corporation | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
JP5088326B2 (ja) * | 2006-10-13 | 2012-12-05 | Jsr株式会社 | 上層膜形成用組成物及びフォトレジストパターン形成方法 |
KR101426116B1 (ko) * | 2007-09-26 | 2014-08-05 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법 |
KR101357611B1 (ko) * | 2008-01-31 | 2014-02-03 | 주식회사 동진쎄미켐 | 에칭률이 우수한 유기 반사방지막 형성용 중합체 및 이를포함하는 조성물 |
JP5228792B2 (ja) * | 2008-10-23 | 2013-07-03 | Jsr株式会社 | 上層反射防止膜形成用組成物及び上層反射防止膜 |
JP2010128136A (ja) * | 2008-11-27 | 2010-06-10 | Jsr Corp | 上層反射防止膜形成用組成物、上層反射防止膜及びパターン形成方法 |
JP5177418B2 (ja) * | 2008-12-12 | 2013-04-03 | 信越化学工業株式会社 | 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法 |
DE112010004602B4 (de) * | 2009-10-22 | 2020-01-30 | Mitsubishi Gas Chemical Co., Inc. | Verfahren zur Herstellung einer feinen Struktur unter Einsatz einer Verarbeitungsflüssigkeit zur Verhinderung eines Musterzusammenbruchs |
CN103098181B (zh) * | 2010-09-08 | 2015-08-26 | 三菱瓦斯化学株式会社 | 用于抑制微细结构体的图案倒塌的处理液和使用其的微细结构体的制造方法 |
KR101779884B1 (ko) * | 2011-10-20 | 2017-09-19 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성조성물용 첨가제 및 이를 포함하는 레지스트 하층막 형성조성물 |
FR2986004B1 (fr) * | 2012-01-25 | 2014-03-14 | Seppic Sa | Nouveau polymere epaississant reduisant le caractere collant des formules cosmetiques a base de glycerine |
CN105940348B (zh) * | 2014-02-12 | 2019-12-06 | 日产化学工业株式会社 | 包含含有氟的表面活性剂的膜形成用组合物 |
CN113296360B (zh) * | 2021-05-21 | 2024-06-14 | 上海邃铸科技有限公司 | 用于光刻胶组合物的酸抑制剂、制备方法及光刻胶组合物 |
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US52845A (en) * | 1866-02-27 | Improved edge-plane for boots and shoes | ||
US205474A (en) * | 1878-07-02 | Improvement in lathes for turning ovals | ||
US6008A (en) * | 1849-01-09 | Pkoto-litho | ||
US10742A (en) * | 1854-04-04 | Enema-syringe | ||
US2025850A (en) * | 1933-10-12 | 1935-12-31 | Crompton & Knowles Loom Works | Method of weaving pile fabrics |
JPS5836037B2 (ja) * | 1980-06-27 | 1983-08-06 | ダイキン工業株式会社 | 含フツ素界面活性剤組成物 |
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS6052845A (ja) | 1983-09-02 | 1985-03-26 | Japan Synthetic Rubber Co Ltd | パタ−ン形成材料 |
JPH0225850A (ja) | 1988-07-15 | 1990-01-29 | Hitachi Ltd | 放射線感応性組成物およびそれを用いたパターン形成法 |
WO1992005474A1 (en) | 1990-09-18 | 1992-04-02 | International Business Machines Corporation | Top coat for acid catalyzed resists |
US5514526A (en) | 1992-06-02 | 1996-05-07 | Mitsubishi Chemical Corporation | Fluorine-containing composition for forming anti-reflection film on resist surface and pattern formation method |
JP3416196B2 (ja) * | 1992-06-02 | 2003-06-16 | シップレーカンパニー エル エル シー | レジスト表面反射防止膜形成性組成物及びパターン形成方法 |
EP0654993A1 (de) * | 1992-08-17 | 1995-05-31 | Quadra Logic Technologies Inc. | Verfahren zur Zerstörung oder Hemmung unerwünschter Zellen oder Gewebe |
JP3192505B2 (ja) * | 1992-11-13 | 2001-07-30 | 東京応化工業株式会社 | 半導体素子製造用パターン形成方法 |
DE4340140A1 (de) * | 1993-11-25 | 1995-06-01 | Basf Ag | Katalysatorsysteme vom Typ der Ziegler-Natta-Katalysatoren |
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JPH1010742A (ja) * | 1996-06-21 | 1998-01-16 | Konica Corp | 光重合性感光材料及び感光性平版印刷版 |
US5994430A (en) * | 1997-04-30 | 1999-11-30 | Clariant Finance Bvi) Limited | Antireflective coating compositions for photoresist compositions and use thereof |
JP3673399B2 (ja) * | 1998-06-03 | 2005-07-20 | クラリアント インターナショナル リミテッド | 反射防止コーティング用組成物 |
FI114855B (fi) * | 1999-07-09 | 2005-01-14 | Outokumpu Oy | Menetelmä reiän tulppaamiseksi ja menetelmällä valmistettu jäähdytyselementti |
JP2002105433A (ja) * | 2000-10-02 | 2002-04-10 | Lion Corp | フッ素含有表面処理剤 |
JP3666807B2 (ja) * | 2001-12-03 | 2005-06-29 | 東京応化工業株式会社 | ホトレジストパターンの形成方法およびホトレジスト積層体 |
JP2004054209A (ja) | 2002-05-27 | 2004-02-19 | Jsr Corp | パターン形成方法および感放射線性樹脂組成物 |
US7038328B2 (en) * | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
EP1718387A2 (de) * | 2004-01-27 | 2006-11-08 | Entegris, Inc. | Verfahren zur entfernung von mikrobläschen aus einer flüssigkeit |
JP2006047351A (ja) * | 2004-07-30 | 2006-02-16 | Asahi Glass Co Ltd | フォトレジスト保護膜用組成物、フォトレジスト保護膜およびフォトレジストパターン形成方法 |
US7234514B2 (en) * | 2004-08-02 | 2007-06-26 | Asml Holding N.V. | Methods and systems for compact, micro-channel laminar heat exchanging |
CN101031597B (zh) * | 2004-09-30 | 2010-04-14 | Jsr株式会社 | 共聚物及形成上层膜用组合物 |
-
2005
- 2005-11-28 KR KR1020077013363A patent/KR100966197B1/ko active IP Right Grant
- 2005-11-28 CN CN200580043412.2A patent/CN101080674B/zh not_active Expired - Fee Related
- 2005-11-28 US US11/792,077 patent/US7709182B2/en active Active
- 2005-11-28 WO PCT/JP2005/021756 patent/WO2006059555A1/ja active Application Filing
- 2005-11-28 AT AT05809661T patent/ATE508393T1/de not_active IP Right Cessation
- 2005-11-28 EP EP05809661A patent/EP1818723B1/de not_active Not-in-force
- 2005-11-28 DE DE602005027888T patent/DE602005027888D1/de active Active
- 2005-11-28 JP JP2006547887A patent/JP4525683B2/ja active Active
- 2005-12-01 TW TW094142330A patent/TWI383264B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI383264B (zh) | 2013-01-21 |
TW200641541A (en) | 2006-12-01 |
DE602005027888D1 (de) | 2011-06-16 |
JPWO2006059555A1 (ja) | 2008-08-07 |
EP1818723B1 (de) | 2011-05-04 |
CN101080674A (zh) | 2007-11-28 |
KR100966197B1 (ko) | 2010-06-25 |
US20080124524A1 (en) | 2008-05-29 |
WO2006059555A1 (ja) | 2006-06-08 |
CN101080674B (zh) | 2013-09-18 |
US7709182B2 (en) | 2010-05-04 |
JP4525683B2 (ja) | 2010-08-18 |
KR20070086151A (ko) | 2007-08-27 |
EP1818723A1 (de) | 2007-08-15 |
EP1818723A4 (de) | 2009-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |