ATE473520T1 - Detektor für elektromagnetische strahlung, diesen verwendende pixelstruktur mit hoher empfindlichkeit und verfahren zu seiner herstellung - Google Patents

Detektor für elektromagnetische strahlung, diesen verwendende pixelstruktur mit hoher empfindlichkeit und verfahren zu seiner herstellung

Info

Publication number
ATE473520T1
ATE473520T1 AT98870025T AT98870025T ATE473520T1 AT E473520 T1 ATE473520 T1 AT E473520T1 AT 98870025 T AT98870025 T AT 98870025T AT 98870025 T AT98870025 T AT 98870025T AT E473520 T1 ATE473520 T1 AT E473520T1
Authority
AT
Austria
Prior art keywords
same
electromagnetic radiation
high sensitivity
radiation detector
pixel structure
Prior art date
Application number
AT98870025T
Other languages
English (en)
Inventor
Bart Dierickx
Original Assignee
Cypress Semiconductor Corp Bel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP97870084A external-priority patent/EP0883187A1/de
Application filed by Cypress Semiconductor Corp Bel filed Critical Cypress Semiconductor Corp Bel
Application granted granted Critical
Publication of ATE473520T1 publication Critical patent/ATE473520T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
AT98870025T 1997-02-10 1998-02-06 Detektor für elektromagnetische strahlung, diesen verwendende pixelstruktur mit hoher empfindlichkeit und verfahren zu seiner herstellung ATE473520T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3753197P 1997-02-10 1997-02-10
EP97870084A EP0883187A1 (de) 1997-06-04 1997-06-04 Detektor für elektromagnetische Strahlung, Pixelstruktur mit höher Empfindlichkeit mit Verwendung dieses Detektors und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
ATE473520T1 true ATE473520T1 (de) 2010-07-15

Family

ID=26148244

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98870025T ATE473520T1 (de) 1997-02-10 1998-02-06 Detektor für elektromagnetische strahlung, diesen verwendende pixelstruktur mit hoher empfindlichkeit und verfahren zu seiner herstellung

Country Status (5)

Country Link
EP (1) EP0858111B1 (de)
JP (1) JP4053651B2 (de)
KR (1) KR100545801B1 (de)
AT (1) ATE473520T1 (de)
DE (1) DE69841754D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815791B1 (en) 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US7106373B1 (en) 1998-02-09 2006-09-12 Cypress Semiconductor Corporation (Belgium) Bvba Method for increasing dynamic range of a pixel by multiple incomplete reset
US8063963B2 (en) 1998-02-09 2011-11-22 On Semiconductor Image Sensor Imaging device having a pixel structure with high dynamic range read-out signal
EP1109229A3 (de) * 1999-12-14 2008-03-26 Fillfactory N.V. Vergrabene und vollständig verarmbare Photodiode mit hohem Füllfaktor
EP1620895B1 (de) * 2003-05-08 2016-03-02 The Science and Technology Facilities Council Sensor zur detektion von beschleunigten teilchen und hochenergiestrahlung
ES2298485T3 (es) 2003-11-21 2008-05-16 Carestream Health, Inc. Aparato de radiologia dental.
WO2006056086A1 (fr) * 2004-11-25 2006-06-01 Waeny Martin Capteur optoelectronique a haute dynamique et faible bruit d’offset
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
JP5387212B2 (ja) * 2009-07-31 2014-01-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR101304094B1 (ko) * 2012-05-23 2013-09-05 서울대학교산학협력단 플래시 메모리의 구조를 이용한 전자파 측정 장치 및 이를 이용한 전자파 측정 방법
JP6381135B2 (ja) * 2015-04-21 2018-08-29 マイクロシグナル株式会社 光電変換素子
JP2018156984A (ja) * 2017-03-15 2018-10-04 株式会社東芝 光検出素子
JP2022039524A (ja) * 2020-08-28 2022-03-10 株式会社東芝 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193073A (en) * 1981-05-22 1982-11-27 Fuji Electric Co Ltd Semiconductor radioactive ray detector
JPS57201085A (en) * 1981-06-03 1982-12-09 Fuji Electric Corp Res & Dev Ltd Semiconductor radiation detector
DE4209536C3 (de) * 1992-03-24 2000-10-05 Stuttgart Mikroelektronik Bildzelle für einen Bildaufnehmer-Chip
US5933190A (en) * 1995-04-18 1999-08-03 Imec Vzw Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation

Also Published As

Publication number Publication date
KR100545801B1 (ko) 2006-04-21
JP4053651B2 (ja) 2008-02-27
JPH1131839A (ja) 1999-02-02
DE69841754D1 (de) 2010-08-19
KR19980071190A (ko) 1998-10-26
EP0858111B1 (de) 2010-07-07
EP0858111A1 (de) 1998-08-12

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Legal Events

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