ATE469421T1 - Nichtflüchtiger speicher mit blocklöschung - Google Patents
Nichtflüchtiger speicher mit blocklöschungInfo
- Publication number
- ATE469421T1 ATE469421T1 AT05077354T AT05077354T ATE469421T1 AT E469421 T1 ATE469421 T1 AT E469421T1 AT 05077354 T AT05077354 T AT 05077354T AT 05077354 T AT05077354 T AT 05077354T AT E469421 T1 ATE469421 T1 AT E469421T1
- Authority
- AT
- Austria
- Prior art keywords
- volatile memory
- block erase
- memory
- block
- flash memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
Landscapes
- Read Only Memory (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Document Processing Apparatus (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/939,394 US6614695B2 (en) | 2001-08-24 | 2001-08-24 | Non-volatile memory with block erase |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE469421T1 true ATE469421T1 (de) | 2010-06-15 |
Family
ID=25473108
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05077355T ATE469422T1 (de) | 2001-08-24 | 2002-08-23 | Nichtflüchtiger speicher |
AT02796424T ATE335277T1 (de) | 2001-08-24 | 2002-08-23 | Nichtflüchtiger speicher mit blocklöschung |
AT05077354T ATE469421T1 (de) | 2001-08-24 | 2002-08-23 | Nichtflüchtiger speicher mit blocklöschung |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05077355T ATE469422T1 (de) | 2001-08-24 | 2002-08-23 | Nichtflüchtiger speicher |
AT02796424T ATE335277T1 (de) | 2001-08-24 | 2002-08-23 | Nichtflüchtiger speicher mit blocklöschung |
Country Status (9)
Country | Link |
---|---|
US (8) | US6614695B2 (de) |
EP (3) | EP1622164B1 (de) |
JP (1) | JP3860573B2 (de) |
KR (1) | KR100581306B1 (de) |
CN (1) | CN1575496B (de) |
AT (3) | ATE469422T1 (de) |
AU (1) | AU2002332653A1 (de) |
DE (3) | DE60236554D1 (de) |
WO (1) | WO2003019565A2 (de) |
Families Citing this family (42)
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US5938678A (en) | 1997-06-11 | 1999-08-17 | Endius Incorporated | Surgical instrument |
US7061810B2 (en) * | 2001-10-09 | 2006-06-13 | Micron Technology, Inc. | Erasing flash memory without pre-programming the flash memory before erasing |
ITRM20010647A1 (it) | 2001-11-02 | 2003-05-02 | Micron Technology Inc | Verifica di cancellazione a blocchi per memorie flash. |
TWI259952B (en) * | 2002-01-31 | 2006-08-11 | Macronix Int Co Ltd | Data erase method of flash memory |
JP4028301B2 (ja) * | 2002-06-11 | 2007-12-26 | 富士通株式会社 | 不揮発性半導体記憶装置及びその消去方法 |
US6941411B2 (en) * | 2002-08-21 | 2005-09-06 | Micron Technology, Inc. | Non-contiguous address erasable blocks and command in flash memory |
KR100506061B1 (ko) * | 2002-12-18 | 2005-08-03 | 주식회사 하이닉스반도체 | 특성 조정 장치를 부가한 메모리 장치 |
KR100492774B1 (ko) * | 2002-12-24 | 2005-06-07 | 주식회사 하이닉스반도체 | 라이트 보호 영역을 구비한 비휘발성 메모리 장치 |
JP2004335056A (ja) * | 2003-05-12 | 2004-11-25 | Sharp Corp | 複数のメモリセルを有する半導体記憶装置をプログラムする方法および消去する方法 |
US6975538B2 (en) * | 2003-10-08 | 2005-12-13 | Micron Technology, Inc. | Memory block erasing in a flash memory device |
JP2006127460A (ja) * | 2004-06-09 | 2006-05-18 | Renesas Technology Corp | 半導体装置、半導体信号処理装置、およびクロスバースイッチ |
US7415646B1 (en) * | 2004-09-22 | 2008-08-19 | Spansion Llc | Page—EXE erase algorithm for flash memory |
JP4051055B2 (ja) * | 2004-10-14 | 2008-02-20 | シャープ株式会社 | 不揮発性メモリの消去パルス設定方法及び消去不良スクリーニング方法 |
KR100648254B1 (ko) * | 2004-12-01 | 2006-11-24 | 삼성전자주식회사 | 소거시간을 줄일 수 있는 불휘발성 메모리 장치 및 그것의소거방법 |
US20060256623A1 (en) * | 2005-05-12 | 2006-11-16 | Micron Technology, Inc. | Partial string erase scheme in a flash memory device |
US7339834B2 (en) * | 2005-06-03 | 2008-03-04 | Sandisk Corporation | Starting program voltage shift with cycling of non-volatile memory |
US7668017B2 (en) * | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US20070047327A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Erase method for flash memory |
US7403430B2 (en) * | 2006-02-16 | 2008-07-22 | Macronix International Co., Ltd. | Erase operation for use in non-volatile memory |
US7640389B2 (en) * | 2006-02-28 | 2009-12-29 | Freescale Semiconductor, Inc. | Non-volatile memory having a multiple block erase mode and method therefor |
US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
US7768835B2 (en) * | 2006-08-09 | 2010-08-03 | Micron Technology, Inc. | Non-volatile memory erase verify |
US20080285368A1 (en) * | 2007-05-17 | 2008-11-20 | Macronix International Co., Ltd. | Method for nrom array word line retry erasing and threshold voltage recovering |
US7649782B2 (en) * | 2007-07-31 | 2010-01-19 | Freescale Semiconductor, Inc. | Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor |
US7916543B2 (en) | 2007-10-22 | 2011-03-29 | Micron Technology, Inc. | Memory cell operation |
US7755940B2 (en) * | 2007-12-05 | 2010-07-13 | Micron Technology, Inc. | Method, apparatus, and system for erasing memory |
JP5072723B2 (ja) * | 2008-06-11 | 2012-11-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2010040125A (ja) * | 2008-08-06 | 2010-02-18 | Samsung Electronics Co Ltd | 不揮発性半導体記憶装置の消去方法 |
US7839690B2 (en) * | 2008-12-11 | 2010-11-23 | Sandisk Corporation | Adaptive erase and soft programming for memory |
KR101703106B1 (ko) * | 2011-01-04 | 2017-02-06 | 삼성전자주식회사 | 부분-이레이즈 동작을 수행할 수 있는 비휘발성 메모리 장치와 상기 비휘발성 메모리 장치를 포함하는 장치들 |
US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
US8830756B2 (en) * | 2013-01-23 | 2014-09-09 | Freescale Semiconductor, Inc. | Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory |
US8879330B1 (en) * | 2013-04-30 | 2014-11-04 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) with variable verify operations |
CN103559911A (zh) * | 2013-10-13 | 2014-02-05 | 广东博观科技有限公司 | 一种提高芯片周期耐久性的方法 |
US9728278B2 (en) | 2014-10-24 | 2017-08-08 | Micron Technology, Inc. | Threshold voltage margin analysis |
US9679658B2 (en) * | 2015-06-26 | 2017-06-13 | Intel Corporation | Method and apparatus for reducing read latency for a block erasable non-volatile memory |
US11232841B2 (en) | 2017-09-05 | 2022-01-25 | Samsung Electronics Co., Ltd. | Methods of operating memory devices based on sub-block positions and related memory system |
KR102336659B1 (ko) | 2017-09-05 | 2021-12-07 | 삼성전자 주식회사 | 데이터 신뢰성을 향상시키기 위한 메모리 동작을 수행하는 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 장치의 동작 방법 |
CN110908593B (zh) * | 2018-09-17 | 2024-02-20 | 兆易创新科技集团股份有限公司 | 一种存储空间擦除方法、装置、存储设备及存储介质 |
US11068165B2 (en) | 2019-06-27 | 2021-07-20 | Western Digital Technologies, Inc. | Non-volatile memory data write management |
CN110970076B (zh) * | 2019-12-02 | 2022-03-18 | 武汉新芯集成电路制造有限公司 | 存储结构及其擦除方法 |
CN111785316B (zh) * | 2020-06-29 | 2021-03-05 | 深圳市芯天下技术有限公司 | 一种克服擦除干扰的方法、***、存储介质和终端 |
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US6381175B2 (en) * | 2000-01-10 | 2002-04-30 | Texas Instruments Incorporated | Method and system for validating flash memory |
US6512263B1 (en) * | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
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US6426898B1 (en) * | 2001-03-05 | 2002-07-30 | Micron Technology, Inc. | Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells |
US6452836B1 (en) * | 2001-03-09 | 2002-09-17 | Micron Technology, Inc. | Non-volatile memory device with erase cycle register |
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-
2001
- 2001-08-24 US US09/939,394 patent/US6614695B2/en not_active Expired - Lifetime
-
2002
- 2002-08-23 CN CN028213068A patent/CN1575496B/zh not_active Expired - Lifetime
- 2002-08-23 EP EP05077354A patent/EP1622164B1/de not_active Expired - Lifetime
- 2002-08-23 DE DE60236554T patent/DE60236554D1/de not_active Expired - Lifetime
- 2002-08-23 KR KR1020047002712A patent/KR100581306B1/ko active IP Right Grant
- 2002-08-23 WO PCT/US2002/027022 patent/WO2003019565A2/en active IP Right Grant
- 2002-08-23 EP EP05077355A patent/EP1622165B1/de not_active Expired - Lifetime
- 2002-08-23 AT AT05077355T patent/ATE469422T1/de not_active IP Right Cessation
- 2002-08-23 AU AU2002332653A patent/AU2002332653A1/en not_active Abandoned
- 2002-08-23 DE DE60213620T patent/DE60213620T2/de not_active Expired - Lifetime
- 2002-08-23 EP EP02796424A patent/EP1425758B1/de not_active Expired - Lifetime
- 2002-08-23 AT AT02796424T patent/ATE335277T1/de not_active IP Right Cessation
- 2002-08-23 JP JP2003522936A patent/JP3860573B2/ja not_active Expired - Lifetime
- 2002-08-23 AT AT05077354T patent/ATE469421T1/de not_active IP Right Cessation
- 2002-08-23 DE DE60236553T patent/DE60236553D1/de not_active Expired - Lifetime
- 2002-11-18 US US10/298,777 patent/US6650571B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,763 patent/US6646926B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,737 patent/US6654292B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,745 patent/US6618293B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,839 patent/US6646927B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,748 patent/US6618294B2/en not_active Expired - Lifetime
- 2002-11-18 US US10/298,743 patent/US6603682B2/en not_active Expired - Lifetime
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