ATE450813T1 - Verfahren zur erzeugung eines musters - Google Patents
Verfahren zur erzeugung eines mustersInfo
- Publication number
- ATE450813T1 ATE450813T1 AT05010007T AT05010007T ATE450813T1 AT E450813 T1 ATE450813 T1 AT E450813T1 AT 05010007 T AT05010007 T AT 05010007T AT 05010007 T AT05010007 T AT 05010007T AT E450813 T1 ATE450813 T1 AT E450813T1
- Authority
- AT
- Austria
- Prior art keywords
- resist film
- pattern
- generating
- substrate
- wet
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004146023 | 2004-05-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE450813T1 true ATE450813T1 (de) | 2009-12-15 |
Family
ID=34936266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05010007T ATE450813T1 (de) | 2004-05-17 | 2005-05-09 | Verfahren zur erzeugung eines musters |
Country Status (4)
Country | Link |
---|---|
US (1) | US7892722B2 (de) |
EP (1) | EP1598704B1 (de) |
AT (1) | ATE450813T1 (de) |
DE (1) | DE602005017972D1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005353763A (ja) * | 2004-06-09 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
JP4989047B2 (ja) * | 2004-07-02 | 2012-08-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 浸漬リソグラフィ用の組成物及びプロセス |
JP2006032834A (ja) * | 2004-07-21 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 露光装置、露光方法及び半導体装置の製造方法 |
US7944599B2 (en) * | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
CN101044594B (zh) * | 2004-10-26 | 2010-05-12 | 株式会社尼康 | 衬底处理方法、曝光装置及器件制造方法 |
US20070242248A1 (en) * | 2004-10-26 | 2007-10-18 | Nikon Corporation | Substrate processing method, exposure apparatus, and method for producing device |
US8294873B2 (en) | 2004-11-11 | 2012-10-23 | Nikon Corporation | Exposure method, device manufacturing method, and substrate |
JP5203575B2 (ja) * | 2005-05-04 | 2013-06-05 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | コーティング組成物 |
US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
US7927779B2 (en) * | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
JP4566861B2 (ja) * | 2005-08-23 | 2010-10-20 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法 |
US7993808B2 (en) | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
JP5114021B2 (ja) | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
JP5114022B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
US20080050679A1 (en) * | 2006-02-22 | 2008-02-28 | Sokudo Co., Ltd. | Methods and systems for performing immersion processing during lithography |
US8518628B2 (en) * | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface switchable photoresist |
EP1975714A1 (de) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive Resistzusammensetzung und Verfahren zur Strukturformung |
US8962085B2 (en) | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
US9481942B2 (en) | 2015-02-03 | 2016-11-01 | Lam Research Corporation | Geometry and process optimization for ultra-high RPM plating |
US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS63229452A (ja) * | 1987-03-18 | 1988-09-26 | Nec Corp | レジストの現像方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JP2896870B2 (ja) | 1995-05-19 | 1999-05-31 | サンケン電気株式会社 | レジストパタ−ンの形成方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US6062240A (en) * | 1998-03-06 | 2000-05-16 | Tokyo Electron Limited | Treatment device |
US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
CA2428255C (en) * | 2000-12-04 | 2010-01-05 | Ciba Specialty Chemicals Holding Inc. | Onium salts and the use therof as latent acids |
JP2002324745A (ja) * | 2001-04-25 | 2002-11-08 | Tokyo Ohka Kogyo Co Ltd | レジスト膜形成方法 |
JP4230130B2 (ja) * | 2001-07-04 | 2009-02-25 | 富士フイルム株式会社 | 感光性平版印刷版用現像液及び平版印刷版の製版方法 |
US6559072B2 (en) * | 2001-08-30 | 2003-05-06 | Micron Technology, Inc. | Develop processing method of a resist surface of a substrate for reduced processing time and reduced defect density |
JP4018892B2 (ja) * | 2001-10-03 | 2007-12-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US6946410B2 (en) * | 2002-04-05 | 2005-09-20 | E. I. Du Pont De Nemours And Company | Method for providing nano-structures of uniform length |
WO2004002955A2 (en) | 2002-06-26 | 2004-01-08 | Arch Specialty Chemicals, Inc. | Photosensitive compositions |
US7022790B2 (en) * | 2002-07-03 | 2006-04-04 | Sumitomo Bakelite Company, Ltd. | Photosensitive compositions based on polycyclic polymers |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
JP2005101498A (ja) * | 2003-03-04 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP4220423B2 (ja) * | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
JP4535489B2 (ja) * | 2004-03-31 | 2010-09-01 | 東京エレクトロン株式会社 | 塗布・現像装置 |
-
2005
- 2005-05-09 DE DE602005017972T patent/DE602005017972D1/de active Active
- 2005-05-09 AT AT05010007T patent/ATE450813T1/de not_active IP Right Cessation
- 2005-05-09 EP EP05010007A patent/EP1598704B1/de not_active Not-in-force
- 2005-05-16 US US11/129,488 patent/US7892722B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050255414A1 (en) | 2005-11-17 |
EP1598704B1 (de) | 2009-12-02 |
EP1598704A3 (de) | 2008-03-26 |
US7892722B2 (en) | 2011-02-22 |
DE602005017972D1 (de) | 2010-01-14 |
EP1598704A2 (de) | 2005-11-23 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |