ATE440381T1 - Hybride esd-klemme - Google Patents
Hybride esd-klemmeInfo
- Publication number
- ATE440381T1 ATE440381T1 AT05700212T AT05700212T ATE440381T1 AT E440381 T1 ATE440381 T1 AT E440381T1 AT 05700212 T AT05700212 T AT 05700212T AT 05700212 T AT05700212 T AT 05700212T AT E440381 T1 ATE440381 T1 AT E440381T1
- Authority
- AT
- Austria
- Prior art keywords
- dmos
- ground
- current
- resistor
- diode
- Prior art date
Links
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Developing Agents For Electrophotography (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/BE2005/000003 WO2006072148A1 (en) | 2005-01-07 | 2005-01-07 | Hybrid esd clamp |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE440381T1 true ATE440381T1 (de) | 2009-09-15 |
Family
ID=34960391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05700212T ATE440381T1 (de) | 2005-01-07 | 2005-01-07 | Hybride esd-klemme |
Country Status (6)
Country | Link |
---|---|
US (1) | US7804670B2 (de) |
EP (1) | EP1834359B1 (de) |
AT (1) | ATE440381T1 (de) |
DE (1) | DE602005016156D1 (de) |
IL (1) | IL184440A (de) |
WO (1) | WO2006072148A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8218276B2 (en) * | 2006-05-31 | 2012-07-10 | Alpha and Omega Semiconductor Inc. | Transient voltage suppressor (TVS) with improved clamping voltage |
JP2010278188A (ja) * | 2009-05-28 | 2010-12-09 | Renesas Electronics Corp | 半導体集積回路装置 |
US20120154956A1 (en) * | 2010-12-17 | 2012-06-21 | National Semiconductor Corporation | Self protected snapback device driven by driver circuitry using high side pull-up avalanche diode |
CN102157518B (zh) * | 2011-01-07 | 2012-05-30 | 北方工业大学 | 单片集成的新型双重突波保护器件及其制作方法 |
EP2515334B1 (de) | 2011-04-20 | 2013-11-20 | Nxp B.V. | ESD-Schutzschaltung |
JP5801609B2 (ja) * | 2011-06-03 | 2015-10-28 | ルネサスエレクトロニクス株式会社 | 保護回路素子 |
US8436418B2 (en) * | 2011-06-20 | 2013-05-07 | United Microelectronics Corp. | High-voltage semiconductor device with electrostatic discharge protection |
US8520347B2 (en) | 2011-07-29 | 2013-08-27 | Silicon Laboratories Inc. | Circuit for ESD protection including dynamically terminated diode strings comprised of bipolar devices |
US8630072B2 (en) | 2011-07-29 | 2014-01-14 | Silicon Laboratories Inc. | Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for ESD protection |
US8854103B2 (en) * | 2012-03-28 | 2014-10-07 | Infineon Technologies Ag | Clamping circuit |
CN103578992B (zh) * | 2012-07-25 | 2016-01-13 | 北大方正集团有限公司 | 一种集成vdmos芯片及其制作方法 |
KR101926607B1 (ko) | 2012-09-28 | 2018-12-07 | 삼성전자 주식회사 | 클램핑 회로, 이를 포함하는 반도체 장치 및 반도체 장치의 클램핑 방법 |
KR102016986B1 (ko) | 2013-01-25 | 2019-09-02 | 삼성전자주식회사 | 엘디모스 트랜지스터 기반의 다이오드 및 이를 포함하는 정전기 방전 보호 회로 |
KR102495452B1 (ko) | 2016-06-29 | 2023-02-02 | 삼성전자주식회사 | 반도체 장치 |
US10276558B1 (en) | 2017-10-30 | 2019-04-30 | International Business Machines Corporation | Electrostatic discharge protection using vertical fin CMOS technology |
TWI804736B (zh) * | 2020-03-25 | 2023-06-11 | 立錡科技股份有限公司 | 具有橫向絕緣閘極雙極性電晶體之功率元件及其製造方法 |
US11532610B2 (en) | 2020-06-24 | 2022-12-20 | Amazing Microelectronic Corp. | Electrostatic discharge protection structure and electrostatic discharge protection circuit with low parasitic capacitance thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4630162A (en) | 1984-07-31 | 1986-12-16 | Texas Instruments Incorporated | ESD input protection circuit |
FR2698486B1 (fr) * | 1992-11-24 | 1995-03-10 | Sgs Thomson Microelectronics | Structure de protection contre les surtensions directes pour composant semiconducteur vertical. |
US5528188A (en) * | 1995-03-13 | 1996-06-18 | International Business Machines Corporation | Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier |
US5917220A (en) * | 1996-12-31 | 1999-06-29 | Stmicroelectronics, Inc. | Integrated circuit with improved overvoltage protection |
US5982217A (en) | 1997-02-19 | 1999-11-09 | Texas Instruments Incorporated | PNP driven NMOS ESD protection circuit |
US6064249A (en) | 1997-06-20 | 2000-05-16 | Texas Instruments Incorporated | Lateral DMOS design for ESD protection |
TW373316B (en) * | 1998-01-09 | 1999-11-01 | Winbond Electronic Corp | Electrostatic discharge protect circuit having erasable coding ROM device |
DE69941977D1 (de) | 1999-06-01 | 2010-03-18 | Imec | ESD-Schutz-Bauteil für mittlere Triggerspannung |
JP2001358297A (ja) * | 2000-06-14 | 2001-12-26 | Nec Corp | 静電保護回路 |
US7224560B2 (en) * | 2003-02-13 | 2007-05-29 | Medtronic, Inc. | Destructive electrical transient protection |
US6693339B1 (en) | 2003-03-14 | 2004-02-17 | Motorola, Inc. | Semiconductor component and method of manufacturing same |
-
2005
- 2005-01-07 AT AT05700212T patent/ATE440381T1/de not_active IP Right Cessation
- 2005-01-07 EP EP05700212A patent/EP1834359B1/de not_active Expired - Fee Related
- 2005-01-07 US US11/794,472 patent/US7804670B2/en active Active
- 2005-01-07 DE DE602005016156T patent/DE602005016156D1/de active Active
- 2005-01-07 WO PCT/BE2005/000003 patent/WO2006072148A1/en active Application Filing
-
2007
- 2007-07-05 IL IL184440A patent/IL184440A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
IL184440A (en) | 2012-01-31 |
DE602005016156D1 (de) | 2009-10-01 |
US20090268357A1 (en) | 2009-10-29 |
WO2006072148A1 (en) | 2006-07-13 |
IL184440A0 (en) | 2007-10-31 |
EP1834359A1 (de) | 2007-09-19 |
US7804670B2 (en) | 2010-09-28 |
EP1834359B1 (de) | 2009-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |