ATE414911T1 - Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben - Google Patents

Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben

Info

Publication number
ATE414911T1
ATE414911T1 AT02752818T AT02752818T ATE414911T1 AT E414911 T1 ATE414911 T1 AT E414911T1 AT 02752818 T AT02752818 T AT 02752818T AT 02752818 T AT02752818 T AT 02752818T AT E414911 T1 ATE414911 T1 AT E414911T1
Authority
AT
Austria
Prior art keywords
trenches
methods
electrical contacts
carrying
electronic devices
Prior art date
Application number
AT02752818T
Other languages
English (en)
Inventor
Michael Haji-Sheikh
James Biard
Robert Hawkins
Simon Rabinovich
James Guenter
Original Assignee
Finisar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp filed Critical Finisar Corp
Application granted granted Critical
Publication of ATE414911T1 publication Critical patent/ATE414911T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/27Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G01R31/275Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2884Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • H01S5/0021Degradation or life time measurements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • H01S5/423Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT02752818T 2001-08-13 2002-08-12 Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben ATE414911T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31191601P 2001-08-13 2001-08-13

Publications (1)

Publication Number Publication Date
ATE414911T1 true ATE414911T1 (de) 2008-12-15

Family

ID=23209047

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02752818T ATE414911T1 (de) 2001-08-13 2002-08-12 Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben

Country Status (10)

Country Link
US (3) US7190184B2 (de)
EP (5) EP1417500B1 (de)
JP (5) JP2005500690A (de)
KR (5) KR20040030104A (de)
CN (5) CN1568429A (de)
AT (1) ATE414911T1 (de)
AU (5) AU2002356039A1 (de)
CA (5) CA2457680A1 (de)
DE (1) DE60229954D1 (de)
WO (5) WO2003017353A2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039277B2 (en) * 2001-08-13 2011-10-18 Finisar Corporation Providing current control over wafer borne semiconductor devices using overlayer patterns
CA2457680A1 (en) * 2001-08-13 2003-02-27 Honeywell International Inc. Methods of conducting wafer level burn-in of electronic devices
US7700379B2 (en) * 2001-08-13 2010-04-20 Finisar Corporation Methods of conducting wafer level burn-in of electronic devices
US6891385B2 (en) * 2001-12-27 2005-05-10 Formfactor, Inc. Probe card cooling assembly with direct cooling of active electronic components
US7064953B2 (en) * 2001-12-27 2006-06-20 Formfactor, Inc. Electronic package with direct cooling of active electronic components
US20040135595A1 (en) * 2002-10-30 2004-07-15 Finisar Corporation Methods, systems, and devices for burn-in testing of optoelectronic devices
US7202684B2 (en) 2003-03-13 2007-04-10 Intel Corporation Thermal stratification test apparatus and method providing cyclical and steady-state stratified environments
US6902965B2 (en) 2003-10-31 2005-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Strained silicon structure
US20050127931A1 (en) * 2003-12-11 2005-06-16 Karlinsey Robert L.Jr. Variable temperature test cell and associated method
US7091737B2 (en) * 2004-10-01 2006-08-15 Intel Corporation Apparatus and methods for self-heating burn-in processes
TWI336468B (en) 2005-03-02 2011-01-21 Ind Tech Res Inst Asymmetry compensator for partial response maximum likelihood (prml) decoder
DE102006005319B4 (de) * 2006-02-06 2010-12-30 Infineon Technologies Ag Heizvorrichtung zum Testen integrierter Bauelemente
US7288951B1 (en) * 2006-11-20 2007-10-30 Micro Control Company Burn-in system having multiple power modes
US20080191701A1 (en) * 2007-02-13 2008-08-14 Seiko Epson Corporation Method and Apparatus for Inspecting Light-Emitting Element and Method and Apparatus for Burn-In
US7663388B2 (en) * 2007-03-30 2010-02-16 Essai, Inc. Active thermal control unit for maintaining the set point temperature of a DUT
KR101452548B1 (ko) * 2007-06-20 2014-10-21 스카이워크스 솔루션즈, 인코포레이티드 후면 수동 디바이스 집적을 이용하는 반도체 다이
CN101363808B (zh) * 2008-09-12 2011-07-20 华中科技大学 气体传感器及阵列的稳定性测试仪
JP5428485B2 (ja) * 2009-04-22 2014-02-26 富士ゼロックス株式会社 面発光型半導体レーザ素子のバーンイン方法およびそのプログラム
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US20130187540A1 (en) 2012-01-24 2013-07-25 Michael A. Tischler Discrete phosphor chips for light-emitting devices and related methods
CN102650676A (zh) * 2012-05-02 2012-08-29 威力盟电子(苏州)有限公司 Led测试装置以及led测试方法
CN103514893B (zh) * 2012-06-18 2017-11-10 新科实业有限公司 半导体光源条在老化测试中的冷却***及冷却方法
US9671448B2 (en) * 2012-12-28 2017-06-06 Illinois Tool Works Inc. In-tool ESD events monitoring method and apparatus
JP5882944B2 (ja) * 2013-05-24 2016-03-09 エスペック株式会社 環境試験装置、供試体の評価方法、並びに、試験装置
WO2015119858A1 (en) 2014-02-05 2015-08-13 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN104007340B (zh) * 2014-05-21 2017-06-20 松阳西屏永新机械厂 一种应用电子产品老化测试***进行的老化测试方法
JP6292104B2 (ja) * 2014-11-17 2018-03-14 三菱電機株式会社 窒化物半導体装置の製造方法
FR3032038B1 (fr) 2015-01-27 2018-07-27 Soitec Procede, dispositif et systeme de mesure d'une caracteristique electrique d'un substrat
US9793239B2 (en) * 2015-09-25 2017-10-17 Advanced Micro Devices, Inc. Semiconductor workpiece with selective backside metallization
JP6676935B2 (ja) * 2015-11-13 2020-04-08 セイコーエプソン株式会社 電気デバイス、圧電モーター、ロボット、ハンド及び送液ポンプ
JP6628688B2 (ja) * 2016-05-25 2020-01-15 三菱電機株式会社 通電検査装置、および、通電検査方法
JP6652003B2 (ja) * 2016-07-04 2020-02-19 株式会社デンソー 半導体チップおよび半導体装置
JP2018207008A (ja) 2017-06-07 2018-12-27 住友電気工業株式会社 面発光半導体レーザを作製する方法
CN107262560B (zh) * 2017-07-28 2023-07-28 深圳斯诺凡科技有限公司 散热器自动测量校正装置
CN109116140B (zh) * 2018-07-16 2020-09-22 中国航空综合技术研究所 一种用于pbga封装器件的测试方法
US20200116755A1 (en) * 2018-10-15 2020-04-16 AIS Technology, Inc. Test interface system and method of manufacture thereof
FR3103558B1 (fr) * 2019-11-26 2021-11-26 Commissariat Energie Atomique Procédé d’évaluation d’une concentration
US20220239056A1 (en) * 2021-01-25 2022-07-28 Mellanox Technologies Tlv Ltd. Wafer level analysis for vcsel screening
US11955778B2 (en) 2021-01-25 2024-04-09 Mellanox Technologies, Ltd. VCSEL binning for optical interconnects
CN113391183B (zh) * 2021-08-17 2021-11-19 苏师大半导体材料与设备研究院(邳州)有限公司 一种半导体器件温度特性测量仪器
CN117491840B (zh) * 2023-10-20 2024-04-30 北京齐诚科技有限公司 一种集成电路的测试装置

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802916A1 (de) * 1978-01-24 1979-07-26 Hoechst Ag Stabilisierte copolymere auf basis aethylen-tetrafluoraethylen und verfahren zu deren herstellung
US4222792A (en) * 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
US4276098A (en) 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors
CN1045138A (zh) 1989-02-21 1990-09-05 鞠恒法 烟用塑棉再生方法
US5047711A (en) * 1989-08-23 1991-09-10 Silicon Connections Corporation Wafer-level burn-in testing of integrated circuits
JPH0770757B2 (ja) * 1989-10-17 1995-07-31 株式会社東芝 半導体発光素子
JPH04262551A (ja) * 1991-02-18 1992-09-17 Mitsubishi Electric Corp ウェハ試験方法及びこれによって試験された半導体装置
JPH0529418A (ja) * 1991-07-17 1993-02-05 Sony Corp 半導体装置のバーイン方法及びそれに用いるバーインボード
KR940001809B1 (ko) * 1991-07-18 1994-03-09 금성일렉트론 주식회사 반도체 칩의 테스터
JPH0689932A (ja) * 1992-09-09 1994-03-29 Mitsubishi Electric Corp パワーmosfetのバーンイン装置
US5513200A (en) * 1992-09-22 1996-04-30 Xerox Corporation Monolithic array of independently addressable diode lasers
US5570032A (en) * 1993-08-17 1996-10-29 Micron Technology, Inc. Wafer scale burn-in apparatus and process
US6184053B1 (en) * 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
JP2922486B2 (ja) 1993-12-21 1999-07-26 松下電器産業株式会社 プローブカード
JP3502875B2 (ja) * 1994-06-03 2004-03-02 株式会社ルネサステクノロジ 接続装置およびその製造方法
US5729563A (en) * 1994-07-07 1998-03-17 Hewlett-Packard Company Method and apparatus for optically and thermally isolating surface emitting laser diodes
JP3443947B2 (ja) * 1994-07-22 2003-09-08 株式会社デンソー バーンイン専用ウェハおよびそれを用いたバーンイン方法
US6204074B1 (en) * 1995-01-09 2001-03-20 International Business Machines Corporation Chip design process for wire bond and flip-chip package
US5600257A (en) 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
US5757027A (en) * 1995-11-06 1998-05-26 International Business Machines Corporation Semiconductor wafer testing method and apparatus
GB2347559B (en) 1995-11-30 2000-11-15 Hewlett Packard Co Vertical cavity surface emitting lasers
US5719891A (en) 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
DE19614460A1 (de) 1996-04-12 1997-10-16 Bosch Gmbh Robert Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor
US5707881A (en) 1996-09-03 1998-01-13 Motorola, Inc. Test structure and method for performing burn-in testing of a semiconductor product wafer
US5966022A (en) 1996-11-08 1999-10-12 W. L. Gore & Associates, Inc. Wafer level burn-in system
TW369601B (en) * 1997-06-17 1999-09-11 Advantest Corp Probe card
JP3142801B2 (ja) * 1997-09-04 2001-03-07 松下電器産業株式会社 半導体集積回路の検査方法、プローブカード及びバーンイン用ボード
JP3830248B2 (ja) 1997-10-30 2006-10-04 松下電器産業株式会社 ウェハ一括型プローブカードによる検査に適した半導体ウェハおよび半導体装置の検査方法ならびに半導体装置の製造方法
JPH11145227A (ja) * 1997-11-04 1999-05-28 Orion Mach Co Ltd 半導体ウェーハの試験装置用温度調節装置
JP3522145B2 (ja) 1998-03-30 2004-04-26 豊田スチールセンター株式会社 輸送容器用重量物搬出入ステージ及び重量物搬出入方法
US6222206B1 (en) * 1998-06-25 2001-04-24 Lucent Technologies Inc Wafer having top and bottom emitting vertical-cavity lasers
WO2000004396A1 (en) * 1998-07-14 2000-01-27 Schlumberger Technologies, Inc. Apparatus, method and system of liquid-based, wide range, fast response temperature cycling control of electronic devices
US6184576B1 (en) * 1998-09-21 2001-02-06 Advantest Corp. Packaging and interconnection of contact structure
JP3522136B2 (ja) 1998-12-11 2004-04-26 三菱電機株式会社 光ディスク装置の光軸倒れ調整装置及び方法
JP2000258495A (ja) * 1999-03-12 2000-09-22 Oki Electric Ind Co Ltd 半導体デバイス試験装置
JP2001050983A (ja) 1999-08-09 2001-02-23 Jsr Corp プローブカード
JP3715160B2 (ja) 1999-12-02 2005-11-09 株式会社ルネサステクノロジ プロービング装置及び半導体素子の製造方法
JP2001203244A (ja) * 2000-01-19 2001-07-27 Matsushita Electric Ind Co Ltd 半導体集積回路の検査方法、半導体集積回路の検査装置及びアライメント装置
FR2804604B1 (fr) 2000-02-09 2005-05-27 Sanofi Synthelabo Utilisation d'un antagoniste des recepteurs aux cannabinoides centraux pour la preparation de medicaments utiles pour faciliter l'arret de la consommation de tabac
NL1014380C2 (nl) 2000-02-14 2001-08-15 Friesland Brands Bv Darmwandversterkend voedingsmiddel.
KR100727907B1 (ko) * 2000-07-20 2007-06-14 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
US6801887B1 (en) 2000-09-20 2004-10-05 Nokia Mobile Phones Ltd. Speech coding exploiting the power ratio of different speech signal components
PL361400A1 (en) 2000-09-21 2004-10-04 Bayer Aktiengesellschaft Optical data carrier containing a phthalocyanine colouring agent as a light absorbing compound in the information layer
US7200464B2 (en) 2000-09-21 2007-04-03 Gsi Group Corporation Digital control servo system
JP4092063B2 (ja) 2000-09-22 2008-05-28 Tdk株式会社 テープカートリッジ
DE10047370A1 (de) 2000-09-25 2002-04-11 Variopac Swiss Gmbh Rheineck Aufbewahrungsvorrichtung
US6830940B1 (en) * 2000-11-16 2004-12-14 Optical Communication Products, Inc. Method and apparatus for performing whole wafer burn-in
US6623997B2 (en) 2000-12-15 2003-09-23 Agilent Technologies, Inc. Method for burn-in processing of optical transmitter arrays using a submount substrate
US6340302B1 (en) 2001-02-06 2002-01-22 Micron Technology, Inc. Apparatus for establishing an electrical connection with a wafer to facilitate wafer-level burn-in and methods
US7700379B2 (en) 2001-08-13 2010-04-20 Finisar Corporation Methods of conducting wafer level burn-in of electronic devices
CA2457680A1 (en) 2001-08-13 2003-02-27 Honeywell International Inc. Methods of conducting wafer level burn-in of electronic devices
US6771086B2 (en) * 2002-02-19 2004-08-03 Lucas/Signatone Corporation Semiconductor wafer electrical testing with a mobile chiller plate for rapid and precise test temperature control
US6842029B2 (en) 2002-04-11 2005-01-11 Solid State Measurements, Inc. Non-invasive electrical measurement of semiconductor wafers
CN2820299Y (zh) 2005-06-20 2006-09-27 姚学民 油烟净化除黑装置

Also Published As

Publication number Publication date
EP1417501A2 (de) 2004-05-12
AU2002323125A1 (en) 2003-03-03
CA2457675A1 (en) 2003-02-27
US20070117242A1 (en) 2007-05-24
WO2003017353A3 (en) 2003-07-24
WO2003017325A3 (en) 2004-01-08
JP2005510044A (ja) 2005-04-14
CA2457685A1 (en) 2003-02-27
JP2005500688A (ja) 2005-01-06
AU2002356039A1 (en) 2003-03-03
EP1417499A2 (de) 2004-05-12
KR20040030104A (ko) 2004-04-08
CN100533165C (zh) 2009-08-26
JP2005500686A (ja) 2005-01-06
KR20040030103A (ko) 2004-04-08
JP5009487B2 (ja) 2012-08-22
CA2457690A1 (en) 2003-02-27
CN1568539A (zh) 2005-01-19
US20100264511A1 (en) 2010-10-21
KR20040030106A (ko) 2004-04-08
CN1568429A (zh) 2005-01-19
WO2003017325A2 (en) 2003-02-27
KR100780059B1 (ko) 2007-11-29
JP2005500691A (ja) 2005-01-06
AU2002323126A1 (en) 2003-03-03
WO2003017353A2 (en) 2003-02-27
EP1417501B1 (de) 2017-05-31
CA2457691A1 (en) 2003-02-27
CN1568433A (zh) 2005-01-19
CN1568431A (zh) 2005-01-19
JP2005500690A (ja) 2005-01-06
CN1568432A (zh) 2005-01-19
US20050024076A1 (en) 2005-02-03
WO2003017352A3 (en) 2003-05-30
WO2003017335A2 (en) 2003-02-27
WO2003017326A2 (en) 2003-02-27
US8129253B2 (en) 2012-03-06
AU2002331074A1 (en) 2003-03-03
EP1417500B1 (de) 2008-11-19
EP1421396A2 (de) 2004-05-26
EP1417500A2 (de) 2004-05-12
CA2457680A1 (en) 2003-02-27
WO2003017352A2 (en) 2003-02-27
WO2003017335A3 (en) 2003-12-18
WO2003017326A3 (en) 2003-05-15
JP5009488B2 (ja) 2012-08-22
EP1423872A2 (de) 2004-06-02
DE60229954D1 (de) 2009-01-02
KR20040030107A (ko) 2004-04-08
KR20040030105A (ko) 2004-04-08
US7190184B2 (en) 2007-03-13
US7662650B2 (en) 2010-02-16
AU2002331069A1 (en) 2003-03-03

Similar Documents

Publication Publication Date Title
ATE414911T1 (de) Verfahren zur durchführung des einbrennens elektronischer vorrichtungen auf nicht vereinzelte halbleiterscheiben
SE0300784D0 (sv) Electrical connections in substrates
EP1517363A3 (de) Dünnfilm-Halbleiterbauelement und diesbezügliches Herstellungsverfahren
SE0801620L (sv) Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar
SE0004095L (sv) Induktorstruktur hos integrerad krets samt icke-förstörande mätning av etsningsdjup
SG136795A1 (en) Semiconductor device and manufacturing method thereof
TW200623400A (en) Method for manufacturing semiconductor device
WO2002069410A3 (en) Gallium nitride material devices including backside vias and methods of fabrication
EA200600367A1 (ru) Система и способ измерения с использованием микроэлектродов на основе алмаза
KR970063662A (ko) 금속 교차선(crossover) 없이 레벨 쉬프트 동작을 하는 고전압 집적회로
TW200644163A (en) Multilevel semiconductor devices and methods of manufacturing the same
TW200603354A (en) Circuit device and method for manufacturing thereof
ATE532212T1 (de) Bordotierte titannitridschicht für halbleiter mit grossem aspektverhältnis
TW200505055A (en) Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
TW200509185A (en) Semiconductor device and method of manufacturing the same
TW200516684A (en) Method of electrical characterization of a silicon-on-insulator (SOI) wafer
ATE393398T1 (de) Prüfeinrichtung zur elektrischen prüfung eines prüflings sowie verfahren zur herstellung einer prüfeinrichtung
EP1498939A3 (de) Verfahren zur Herstellung von Kontakten in einer integrierten Schaltung
WO2001099180A3 (en) Novel frontside contact to substrate of soi device
JP2001168081A5 (de)
KR960015794A (ko) 반도체소자 제조방법
EP1447848A3 (de) Integrierte Halbleiterschaltung mit einer Antisicherung und Verfahren zu deren Herstellung
TW200501435A (en) Semiconductor component and method of manufacturing same
TW200802688A (en) Transistors, silicon on insulator(SOI) devices and manufacturing methods thereof
KR970063677A (ko) 멀티레벨 상호 접속 반도체 장치와 제조 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties