ATE363455T1 - Mesoporöser siliciumdioxidfilm ausgehend von tensid enthaltender lösung und verfahren zu dessen herstellung - Google Patents

Mesoporöser siliciumdioxidfilm ausgehend von tensid enthaltender lösung und verfahren zu dessen herstellung

Info

Publication number
ATE363455T1
ATE363455T1 AT99967535T AT99967535T ATE363455T1 AT E363455 T1 ATE363455 T1 AT E363455T1 AT 99967535 T AT99967535 T AT 99967535T AT 99967535 T AT99967535 T AT 99967535T AT E363455 T1 ATE363455 T1 AT E363455T1
Authority
AT
Austria
Prior art keywords
film
dehydroxylating
present
gas
mesoporous
Prior art date
Application number
AT99967535T
Other languages
English (en)
Inventor
Karel Domansky
Glen Fryxell
Jun Liu
Nathan Kohler
Suresh Baskaran
Xiaohong Li
Suntharampillai Thevuthasan
Christopher Coyle
Jerome Birnbaum
Original Assignee
Battelle Memorial Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/222,569 external-priority patent/US6383466B1/en
Priority claimed from US09/413,062 external-priority patent/US6329017B1/en
Application filed by Battelle Memorial Institute filed Critical Battelle Memorial Institute
Application granted granted Critical
Publication of ATE363455T1 publication Critical patent/ATE363455T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/185—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process of crystalline silica-polymorphs having molecular sieve properties, e.g. silicalites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B37/00—Compounds having molecular sieve properties but not having base-exchange properties
    • C01B37/02—Crystalline silica-polymorphs, e.g. silicalites dealuminated aluminosilicate zeolites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT99967535T 1998-12-23 1999-12-23 Mesoporöser siliciumdioxidfilm ausgehend von tensid enthaltender lösung und verfahren zu dessen herstellung ATE363455T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22088298A 1998-12-23 1998-12-23
US09/222,569 US6383466B1 (en) 1998-12-28 1998-12-28 Method of dehydroxylating a hydroxylated material and method of making a mesoporous film
US33521099A 1999-06-17 1999-06-17
US36149999A 1999-07-23 1999-07-23
US09/413,062 US6329017B1 (en) 1998-12-23 1999-10-04 Mesoporous silica film from a solution containing a surfactant and methods of making same

Publications (1)

Publication Number Publication Date
ATE363455T1 true ATE363455T1 (de) 2007-06-15

Family

ID=27539816

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99967535T ATE363455T1 (de) 1998-12-23 1999-12-23 Mesoporöser siliciumdioxidfilm ausgehend von tensid enthaltender lösung und verfahren zu dessen herstellung

Country Status (9)

Country Link
EP (1) EP1144310B1 (de)
JP (1) JP4040255B2 (de)
KR (1) KR100536178B1 (de)
CN (1) CN1219700C (de)
AT (1) ATE363455T1 (de)
AU (1) AU2379900A (de)
DE (1) DE69936228T2 (de)
IL (1) IL143589A0 (de)
WO (1) WO2000039028A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592980B1 (en) 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
US6365266B1 (en) 1999-12-07 2002-04-02 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
JP4856307B2 (ja) * 2000-11-24 2012-01-18 株式会社アルバック 多孔質ｓｏｇ膜の疎水化処理方法
US6559070B1 (en) * 2000-04-11 2003-05-06 Applied Materials, Inc. Mesoporous silica films with mobile ion gettering and accelerated processing
JP2001335652A (ja) * 2000-05-29 2001-12-04 Jsr Corp 膜の製造方法および絶縁膜
AU2001273734B2 (en) * 2000-06-09 2005-04-07 The University Of Queensland Improved silica membranes and process of production thereof
AUPQ811300A0 (en) 2000-06-09 2000-07-06 University Of Queensland, The Improved silica membrane and process of production therefor
US6573131B2 (en) 2000-07-13 2003-06-03 The Regents Of The University Of California Silica zeolite low-k dielectric thin films and methods for their production
JP2002050620A (ja) * 2000-08-07 2002-02-15 Ulvac Japan Ltd 多孔質絶縁膜形成装置
JP4855567B2 (ja) * 2000-08-10 2012-01-18 達也 大久保 シリカ系被膜の製造方法
US6548892B1 (en) * 2000-08-31 2003-04-15 Agere Systems Inc. Low k dielectric insulator and method of forming semiconductor circuit structures
JP4167388B2 (ja) 2000-09-27 2008-10-15 株式会社東芝 半導体装置の製造方法
JP4889896B2 (ja) * 2000-11-09 2012-03-07 バッテル メモリアル インスティテュート 多孔質シリカの脱ヒドロキシル化およびアルキル化のための真空／気相反応器
JP2002211914A (ja) * 2001-01-15 2002-07-31 Hitachi Chem Co Ltd 薄膜製造用塗布液およびその製造方法
KR20040039368A (ko) * 2001-09-17 2004-05-10 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전자 장치 및 조성물
TW561634B (en) * 2001-09-25 2003-11-11 Rohm Co Ltd Method for producing semiconductor device
US7122880B2 (en) * 2002-05-30 2006-10-17 Air Products And Chemicals, Inc. Compositions for preparing low dielectric materials
JP4284083B2 (ja) 2002-08-27 2009-06-24 株式会社アルバック 多孔質シリカ膜の形成方法
TWI273090B (en) 2002-09-09 2007-02-11 Mitsui Chemicals Inc Method for modifying porous film, modified porous film and use of same
AU2003259447A1 (en) * 2002-10-11 2004-05-04 Koninklijke Philips Electronics N.V. Electric device comprising phase change material
US6699797B1 (en) 2002-12-17 2004-03-02 Intel Corporation Method of fabrication of low dielectric constant porous metal silicate films
USRE48202E1 (en) 2002-12-19 2020-09-08 Iii Holdings 6, Llc Electric device comprising phase change material
JP2004273786A (ja) * 2003-03-10 2004-09-30 Ulvac Japan Ltd 疎水性多孔質ｓｏｇ膜の作製方法
CN101252030A (zh) * 2004-03-02 2008-08-27 气体产品与化学公司 用于制备含溶剂的低介电材料的组合物
FR2874007B1 (fr) * 2004-08-03 2007-11-23 Essilor Int Procede de fabrication d'un substrat revetu d'une couche mesoporeuse et son application en optique
EP1890964B1 (de) * 2005-06-16 2016-08-10 Agency for Science, Technology and Research Mesozelluläre schaumstoffteilchen
JP5165914B2 (ja) * 2007-03-30 2013-03-21 三井化学株式会社 多孔質シリカフィルム及びその製造方法
US20100267553A1 (en) * 2007-09-14 2010-10-21 Nippon Oil Corporation Tungsten-containing Mesoporous Silica Thin Film, Highly Hydrophilic Material Containing the Same, and Method for Producing Tungsten-Containing Mesoporous Silica Thin Film
JP4598876B2 (ja) 2008-04-02 2010-12-15 三井化学株式会社 組成物の製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜
TW201407185A (zh) * 2012-05-29 2014-02-16 Kuraray Co 抗反射膜
CN103803573B (zh) * 2012-11-07 2016-01-20 中国石油化工股份有限公司 一种介孔二氧化硅分子筛的制备方法
WO2014148230A1 (ja) * 2013-03-19 2014-09-25 株式会社クラレ コーティング組成物及びそれを用いるメソポーラスシリカの製造方法
KR101601454B1 (ko) 2014-07-25 2016-03-08 아주대학교산학협력단 2차원 템플레이트, 이의 제조 방법, 다공성 나노 시트, 이의 제조 방법 및 전극 구조체
CN105153446B (zh) * 2015-10-09 2018-11-06 中国科学院深圳先进技术研究院 一种pmo薄膜的制备方法及应用
KR101866940B1 (ko) * 2016-10-14 2018-07-24 한국에너지기술연구원 3차원 기공구조의 메조포러스 실리카 지지체를 포함하는 포름산 탈수소화 촉매 및 이의 제조방법
KR102267504B1 (ko) * 2017-12-22 2021-06-21 주식회사 엘지화학 메조포러스 실리카 코팅층을 포함하는 광학 부재의 제조방법 및 이를 이용하여 제조된 광학 부재
WO2020143483A1 (zh) 2019-01-11 2020-07-16 惠科股份有限公司 X射线探测器、x射线探测器制造方法及医用设备
CN109841636B (zh) * 2019-01-11 2021-04-16 惠科股份有限公司 X射线探测器、x射线探测器光电转换层的制造方法及医用设备
CN115613012A (zh) * 2022-09-22 2023-01-17 辽宁师范大学 一种图案化薄膜的制备方法
CN115537963B (zh) * 2022-10-26 2023-10-27 湖州草本源新材料有限公司 一种二氧化硅气凝胶纤维、制备方法及其应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470802A (en) * 1994-05-20 1995-11-28 Texas Instruments Incorporated Method of making a semiconductor device using a low dielectric constant material
US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5622684A (en) * 1995-06-06 1997-04-22 Board Of Trustees Operating Michigan State University Porous inorganic oxide materials prepared by non-ionic surfactant templating route
US5736425A (en) * 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US5922299A (en) * 1996-11-26 1999-07-13 Battelle Memorial Institute Mesoporous-silica films, fibers, and powders by evaporation
US5858457A (en) * 1997-09-25 1999-01-12 Sandia Corporation Process to form mesostructured films

Also Published As

Publication number Publication date
KR100536178B1 (ko) 2005-12-12
CN1219700C (zh) 2005-09-21
CN1335820A (zh) 2002-02-13
JP4040255B2 (ja) 2008-01-30
EP1144310A1 (de) 2001-10-17
DE69936228T2 (de) 2008-02-07
EP1144310B1 (de) 2007-05-30
WO2000039028A1 (en) 2000-07-06
JP2003520745A (ja) 2003-07-08
AU2379900A (en) 2000-07-31
KR20020024573A (ko) 2002-03-30
DE69936228D1 (de) 2007-07-12
IL143589A0 (en) 2002-04-21

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