ATE317586T1 - Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema - Google Patents
Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschemaInfo
- Publication number
- ATE317586T1 ATE317586T1 AT01309366T AT01309366T ATE317586T1 AT E317586 T1 ATE317586 T1 AT E317586T1 AT 01309366 T AT01309366 T AT 01309366T AT 01309366 T AT01309366 T AT 01309366T AT E317586 T1 ATE317586 T1 AT E317586T1
- Authority
- AT
- Austria
- Prior art keywords
- coupled
- storage elements
- sensing device
- read port
- columns
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24591300P | 2000-11-03 | 2000-11-03 | |
US09/964,971 US6519204B2 (en) | 2000-11-03 | 2001-09-27 | Very small swing high performance CMOS static memory (multi-port register file) with power reducing column multiplexing scheme |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE317586T1 true ATE317586T1 (de) | 2006-02-15 |
Family
ID=26937555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01309366T ATE317586T1 (de) | 2000-11-03 | 2001-11-05 | Cmos speicher (vom mehrtoregistertyp) mit leistungsreduziertem spaltenmultiplexierungsschema |
Country Status (4)
Country | Link |
---|---|
US (2) | US6519204B2 (de) |
EP (1) | EP1204121B1 (de) |
AT (1) | ATE317586T1 (de) |
DE (1) | DE60117114T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6639866B2 (en) * | 2000-11-03 | 2003-10-28 | Broadcom Corporation | Very small swing high performance asynchronous CMOS static memory (multi-port register file) with power reducing column multiplexing scheme |
US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
KR100993517B1 (ko) * | 2002-03-27 | 2010-11-10 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 집적 회로, 집적 회로 구동 회로, 및 관련방법 |
JP4537668B2 (ja) * | 2003-05-23 | 2010-09-01 | パナソニック株式会社 | 多ポートメモリセル |
WO2005006340A2 (en) * | 2003-07-01 | 2005-01-20 | Zmos Technology, Inc. | Sram cell structure and circuits |
DE602004024683D1 (de) * | 2003-07-14 | 2010-01-28 | Fulcrum Microsystems Inc | |
EP1526590A2 (de) * | 2003-09-22 | 2005-04-27 | Fuji Photo Film Co., Ltd. | Batterie und ein Paar Kontakte und Objektiv-gepasstes Fotofilmeinheit |
US6987686B2 (en) * | 2003-12-11 | 2006-01-17 | International Business Machines Corporation | Performance increase technique for use in a register file having dynamically boosted wordlines |
FR2871922A1 (fr) * | 2004-06-17 | 2005-12-23 | St Microelectronics Sa | Cellule de memoire vive a encombrement et complexite reduits |
US7469465B2 (en) * | 2004-06-30 | 2008-12-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method of providing a low-stress sensor configuration for a lithography-defined read sensor |
US7209395B2 (en) * | 2004-09-28 | 2007-04-24 | Intel Corporation | Low leakage and leakage tolerant stack free multi-ported register file |
US7660149B2 (en) * | 2006-12-07 | 2010-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell with separate read and write ports |
US7746713B2 (en) * | 2007-09-12 | 2010-06-29 | Massachusetts Institute Of Technology | High density 45 nm SRAM using small-signal non-strobed regenerative sensing |
US8370557B2 (en) * | 2008-12-19 | 2013-02-05 | Intel Corporation | Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory |
TWI419173B (zh) * | 2009-07-31 | 2013-12-11 | Univ Nat Chiao Tung | Static random access memory device |
US8456945B2 (en) | 2010-04-23 | 2013-06-04 | Advanced Micro Devices, Inc. | 10T SRAM for graphics processing |
US9606746B2 (en) | 2011-10-27 | 2017-03-28 | Hewlett Packard Enterprise Development Lp | Shiftable memory supporting in-memory data structures |
US8854901B2 (en) | 2012-05-18 | 2014-10-07 | Stmicroelectronics International N.V. | Read self timing circuitry for self-timed memory |
US8854902B2 (en) * | 2012-05-18 | 2014-10-07 | Stmicroelectronics International N.V. | Write self timing circuitry for self-timed memory |
CN102751975B (zh) * | 2012-07-12 | 2016-01-20 | 三一重工股份有限公司 | Pwm与ai复用端口及控制器 |
US9324414B2 (en) | 2013-07-24 | 2016-04-26 | Stmicroelectronics International N.V. | Selective dual cycle write operation for a self-timed memory |
CN104199344B (zh) * | 2014-08-14 | 2017-08-18 | 湖南三一智能控制设备有限公司 | 接口电路、控制器、控制***及工程机械 |
US10446233B2 (en) | 2017-08-23 | 2019-10-15 | Globalfoundries Inc. | Sense-line muxing scheme |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3582802D1 (de) * | 1985-10-15 | 1991-06-13 | Ibm | Leseverstaerker zur verstaerkung von signalen auf einer vorgespannten leitung. |
US4935649A (en) | 1988-07-11 | 1990-06-19 | Cypress Semiconductor Corporation | Clamped sense amplifier |
US4918341A (en) | 1988-09-23 | 1990-04-17 | Actel Corporaton | High speed static single-ended sense amplifier |
JP2837682B2 (ja) | 1989-01-13 | 1998-12-16 | 株式会社日立製作所 | 半導体記憶装置 |
US4943945A (en) | 1989-06-13 | 1990-07-24 | International Business Machines Corporation | Reference voltage generator for precharging bit lines of a transistor memory |
US5189640A (en) * | 1990-03-27 | 1993-02-23 | National Semiconductor Corporation | High speed, multi-port memory cell utilizable in a BICMOS memory array |
US5325335A (en) * | 1991-05-30 | 1994-06-28 | Integrated Device Technology, Inc. | Memories and amplifiers suitable for low voltage power supplies |
US5440506A (en) * | 1992-08-14 | 1995-08-08 | Harris Corporation | Semiconductor ROM device and method |
GB2278698B (en) | 1993-05-05 | 1997-09-03 | Hewlett Packard Co | Multi-ported data storage device with improved cell stability |
US5477489A (en) * | 1995-03-20 | 1995-12-19 | Exponential Technology, Inc. | High-stability CMOS multi-port register file memory cell with column isolation and current-mirror row line driver |
US5710742A (en) * | 1995-05-12 | 1998-01-20 | International Business Machines Corporation | High density two port SRAM cell for low voltage CMOS applications |
US5724299A (en) * | 1996-04-30 | 1998-03-03 | Sun Microsystems, Inc. | Multiport register file memory using small voltage swing for write operation |
-
2001
- 2001-09-27 US US09/964,971 patent/US6519204B2/en not_active Expired - Lifetime
- 2001-11-05 AT AT01309366T patent/ATE317586T1/de not_active IP Right Cessation
- 2001-11-05 EP EP01309366A patent/EP1204121B1/de not_active Expired - Lifetime
- 2001-11-05 DE DE60117114T patent/DE60117114T2/de not_active Expired - Lifetime
-
2003
- 2003-01-10 US US10/340,066 patent/US6903996B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030099148A1 (en) | 2003-05-29 |
EP1204121A3 (de) | 2002-10-16 |
US6903996B2 (en) | 2005-06-07 |
DE60117114T2 (de) | 2006-09-28 |
EP1204121B1 (de) | 2006-02-08 |
US6519204B2 (en) | 2003-02-11 |
DE60117114D1 (de) | 2006-04-20 |
EP1204121A2 (de) | 2002-05-08 |
US20020071333A1 (en) | 2002-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |